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PBSS5250X,115

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PBSS5250X,115

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Part Number PBSS5250X,115
Manufacturer Nexperia USA Inc.
Description TRANS PNP 50V 2A SOT89
Datasheet PBSS5250X,115 Datasheet
Package TO-243AA
In Stock 8,000 piece(s)
Unit Price $ 0.1191 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 24 - Jan 29 (Choose Expedited Shipping)
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Part Number # PBSS5250X,115 (Transistors - Bipolar (BJT) - Single) is manufactured by Nexperia USA Inc. and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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PBSS5250X,115 Specifications

ManufacturerNexperia USA Inc.
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Datasheet PBSS5250X,115Datasheet
PackageTO-243AA
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic320mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A, 2V
Power - Max1W
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackageSOT-89-3

PBSS5250X,115 Datasheet

Page 1

Page 2

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Page 3

DATA SHEET Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 04 DISCRETE SEMICONDUCTORS PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor dbook, halfpage M3D109

Page 4

NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250XFEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4250X. MARKING Note 1. * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China. TYPE NUMBER MARKING CODE(1) PBSS5250X *1L2004 Nov 04PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base 3 2 1 sym079 1 2 3 Fig.1 Simplified outline (SOT89) and symbol.QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage −50 V IC collector current (DC) −2 A ICM peak collector current −5 A RCEsat equivalent on-resistance 160 mΩ2

Page 5

NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250XORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PBSS5250X SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICM peak collector current Tj(max) − −5 A IB base current (DC) − −0.5 A Ptot total power dissipation Tamb ≤ 25 °C note 1 − 550 mW note 2 − 1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C2004 Nov 04 3

Page 6

NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250XTHERMAL CHARACTERISTICS Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air note 1 225 K/W note 2 125 K/W note 3 90 K/W note 4 80 K/W Rth(j-s) thermal resistance from junction to soldering point 16 K/W 006aaa243 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 0 Fig.2 Transient thermal impedance as a function of pulse time; typical values. Mounted on FR4 printed-circuit board; standard footprint.2004 Nov 04 4

Page 7

NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X006aaa244 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 duty cycle = 1.00 0.75 0.50 0.20 0.05 0.02 0.01 0 0.33 0.10 Fig.3 Transient thermal impedance as a function of pulse time; typical values. Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.006aaa245 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 duty cycle = 1.00 0.75 0.50 0.20 0.05 0.02 0.01 0 0.33 0.10 Fig.4 Transient thermal impedance as a function of pulse time; typical values. Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.2004 Nov 04 5

Page 8

NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250XCHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE = 0 A − −100 nA VCB = −50 V; IE = 0 A; Tj = 150 °C − −50 μA ICES collector-emitter cut-off current VCE = −50 V; VBE = 0 V − −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − −100 nA hFE DC current gain VCE = −2 V IC = −0.1 A 200 − IC = −0.5 A 200 − IC = −1 A; note 1 200 − IC = −2 A; note 1 100 − VCEsat collector-emitter saturation voltage IC = −0.5 A; IB = −50 mA − −90 mV IC = −1 A; IB = −50 mA − −250 mV IC = −2 A; IB = −100 mA − −380 mV IC = −2 A; IB = −200 mA; note 1 − −320 mV RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 160 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −100 mA − −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A −1.1 − V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 − MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 35 pF2004 Nov 04 6

Page 9

NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250XPACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA DIMENSIONS (mm are the original dimensions) SOT89 TO-243 SC-62 04-08-03 06-03-16 w M e1 e E HE B 0 2 4 mm scale bp3 bp2 bp1 c D Lp A Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 1 2 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 HE Lp 4.25 3.75 e 3.0 w 0.13 e1 1.5 1.2 0.8 bp2bp1 0.53 0.40 bp3 1.8 1.42004 Nov 04 7

Page 10

NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250XDATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Nov 04 8

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