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PD55015-E

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PD55015-E

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Part Number PD55015-E
Manufacturer STMicroelectronics
Description FET RF 40V 500MHZ PWRSO-10
Datasheet PD55015-E Datasheet
Package PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
In Stock 447 piece(s)
Unit Price $ 20.4200 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 2 - Dec 7 (Choose Expedited Shipping)
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Part Number # PD55015-E (Transistors - FETs, MOSFETs - RF) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For PD55015-E specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add PD55015-E with quantity into BOM. Heisener.com does NOT require any registration to request a quote of PD55015-E.

PD55015-E Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
Datasheet PD55015-EDatasheet
PackagePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Series-
Transistor TypeLDMOS
Frequency500MHz
Gain14dB
Voltage - Test12.5V
Current Rating5A
Noise Figure-
Current - Test150mA
Power - Output15W
Voltage - Rated40V
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device PackagePowerSO-10RF (Formed Lead)

PD55015-E Datasheet

Page 1

Page 2

August 2011 Doc ID 12596 Rev 3 1/25 25 PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V Description The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The PD55015-E’s superior linearity performance makes it an ideal solution for car mobile radios. The PowerSO-10RF plastic package is designed for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly. Mounting recommendations are provided in application note AN1294, available on www.st.com. Figure 1. Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain Table 1. Device summary Order code Package Packing PD55015-E PowerSO-10RF (formed lead) Tube PD55015S-E PowerSO-10RF (straight lead) Tube PD55015TR-E PowerSO-10RF (formed lead) Tape and reel PD55015STR-E PowerSO-10RF (straight lead) Tape and reel www.st.com

Page 3

Contents PD55015-E 2/25 Doc ID 12596 Rev 3 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 Performance related to the PowerSO-10RF formed lead . . . . . . . . . . . . . . 7 4.2 Performance related to the PowerSO-10RF straight lead . . . . . . . . . . . . . 9 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Page 4

PD55015-E Electrical data Doc ID 12596 Rev 3 3/25 1 Electrical data 1.1 Maximum ratings 1.2 Thermal data Table 2. Absolute maximum ratings (TCASE = 25°C) Symbol Parameter Value Unit V(BR)DSS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID Drain current 5 A PDISS Power dissipation (@ TC = 70°C) 73 W TJ Max. operating junction temperature 165 °C TSTG Storage temperature -65 to +150 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Junction - case thermal resistance 1.2 °C/W

Page 5

Electrical characteristics PD55015-E 4/25 Doc ID 12596 Rev 3 2 Electrical characteristics TCASE = +25 oC 2.1 Static 2.2 Dynamic 2.3 Moisture sensitivity level Table 4. Static Symbol Test conditions Min Typ Max Unit IDSS VGS = 0 VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 1 µA VGS(Q) VDS = 10 V ID = 150 mA 2.0 5.0 V VDS(ON) VGS = 10 V ID = 2.5 A 0.8 V gFS VDS = 10 V ID = 2.5 A 2.0 2.5 mho CISS VGS = 0 VDS = 12.5 V f = 1 MHz 89 pF COSS VGS = 0 VDS = 12.5 V f = 1 MHz 60 pF CRSS VGS = 0 VDS = 12.5 V f = 1 MHz 6.5 pF Table 5. Dynamic Symbol Test conditions Min Typ Max Unit P1dB VDD = 12.5 V, IDQ = 150 mA f = 500 MHz 15 W GP VDD = 12.5 V, IDQ = 150 mA, POUT = 15 W, f = 500 MHz 12 14 dB nD VDD = 12.5 V, IDQ = 150 mA, POUT = 15 W, f = 500 MHz 50 55 % Load mismatch VDD = 15.5 V, IDQ = 150 mA, POUT = 15 W, f = 500 MHz All phase angles 20:1 VSWR Table 6. Moisture sensitivity level Test methodology Rating J-STD-020B MSL 3

Page 6

PD55015-E Impedance Doc ID 12596 Rev 3 5/25 3 Impedance Figure 2. Current conventions Table 7. Impedance data PD55015 PD55015S Freq. (MHz) ZIN (Ω) ZDL(Ω) Freq. (MHz) ZIN (Ω) ZDL(Ω) 480 1.58 + j 0.56 1.27 - j 1.36 480 1.30 - j 0.54 1.18 + j 0.04 500 1.53 + j 0.77 1.51 - j 1.81 500 1.26 - j 0.30 1.32 - j 0.22 520 1.70 + j 1.17 1.44 - j 2.13 520 1.34 - j 0.11 1.46 - j 0.22 876 0.33 + j 0.44 1.36 - j 0.21 900 0.33 + j 0.70 1.29 - j 1.03 915 0.33 + j 0.87 1.27 - j 0.37

Page 7

Typical performance PD55015-E 6/25 Doc ID 12596 Rev 3 4 Typical performance Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate voltage Figure 5. Gate-source voltage vs. case temperature Figure 6. Maximum safe operating area 0 5 10 15 20 25 30 VDS (V) 1 10 100 1000 C (pF) C iss C oss C rss f= 1 M H z 2.5 3 3.5 4 4.5 5 Vgs, GATE-SOURCE VOLTAGE (V) 0 0.5 1 1.5 2 2.5 3 3.5 4 Id , D R A IN C U R R E N T ( A ) VDS = 10 V -25 0 25 50 75 Tc, CASE TEMPERATURE (°C) 0.96 0.98 1 1.02 1.04 V G S , G A T E -S O U R C E V O LT A G E ( N O R M A LI Z E D ) ID = .25 A ID = 1A ID = 1.5 A ID = 2A ID = 3A VDS = 10 V 0.1 1 10 1 10 100 TC = 100 °C TC = 70 °C TC = 25 °CI d, D RA IN C U RR EN T (V ) VDS, DRAIN-SOURCE VOLTAGE (V) TJ = +165°C AM10118V1

Page 8

PD55015-E Typical performance Doc ID 12596 Rev 3 7/25 4.1 Performance related to the PowerSO-10RF formed lead Figure 7. Output power vs. input power Figure 8. Power gain vs. output power Figure 9. Drain efficiency vs. output power Figure 10. Return loss vs. output power 0 0.2 0.4 0.6 0.8 1 Pin, INPUT POWER (W) 0 2 4 6 8 10 12 14 16 18 P ou t, O U T P U T P O W E R ( W ) 500 MHz 480 MHz 520 MHz VDD = 12..5 V IDQ = 150 mA 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 10 12 14 16 18 G p, P O W E R G A IN ( dB ) 500 MHz 480 MHz 520 MHz Vdd = 12.5 V Idq = 150 mA 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 0 10 20 30 40 50 60 N d, D R A IN E F F IC IE N C Y ( % ) 500 MHz 520 MHz 480 MHz Vdd = 12.5 V Idq = 150 mA 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) -40 -30 -20 -10 0 R tl, R E T U R N L O S S ( dB ) 500 MHz 520 MHz 480 MHz Vdd = 12.5 V Idq = 150 mA

Page 9

Typical performance PD55015-E 8/25 Doc ID 12596 Rev 3 Figure 11. Output power vs. bias current Figure 12. Drain efficiency vs. bias current Figure 13. Output power vs. drain voltage Figure 14. Drain efficiency vs. drain voltage Figure 15. Output power vs. gate bias voltage 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 12 14 16 18 20 22 P ou t, O U T P U T P O W E R ( W ) 520 MHz 480 MHz 500 MHz Pin = .7 W Vdd = 12.5 V 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 30 40 50 60 70 N d, D R A IN E F F IC IE N C Y ( % ) 500 MHz 480 MHz 520 MHz Pin = .7 W Vdd = 12.5 V 7 8 9 10 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V) 0 5 10 15 20 25 P ou t, O U T P U T P O W E R ( W ) 520 MHz 480 MHz 500 MHz Idq = 150mA Pin = .7 W 7 8 9 10 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V) 30 40 50 60 70 N d, D R A IN E F F IC IE N C Y ( % ) 500 MHz 520 MHz 480 MHz IDQ = 150mA Pin = .7 W 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE BIAS VOLTAGE (V) 0 5 10 15 20 P ou t, O U T P U T P O W E R ( W ) 500 MHz 520 MHz 480 MHz VDD = 12.5 V Pin = .7 W

Page 10

PD55015-E Typical performance Doc ID 12596 Rev 3 9/25 4.2 Performance related to the PowerSO-10RF straight lead Figure 16. Output power vs. input power Figure 17. Power gain vs. output power Figure 18. Drain efficiency vs. output power Figure 19. Return loss vs. output power 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pin, INPUT POWER (W) 0 2 4 6 8 10 12 14 16 18 P ou t, O U T P U T P O W E R ( W ) 500 MHz 480 MHz 520 MHz VDD = 12..5 V IDQ = 150 mA 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 10 12 14 16 18 G p, P O W E R G A IN ( dB ) 500 MHz 480 MHz 520 MHz Vdd = 12.5 V Idq = 150 mA 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 0 10 20 30 40 50 60 N d, D R A IN E F F IC IE N C Y ( % ) 500 MHz 520 MHz 480 MHz Vdd = 12.5 V Idq = 150 mA 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) -40 -30 -20 -10 0 R tl, R E T U R N L O S S ( dB ) 500 MHz 520 MHz 480 MHz Vdd = 12.5 V Idq = 150 mA Figure 20. Output power vs. gate bias current Figure 21. Drain efficiency vs. bias current 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 12 14 16 18 20 22 P ou t, O U T P U T P O W E R ( W ) 520 MHz 480 MHz 500 MHz Pin = .5 W Vdd = 12.5 V 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 30 40 50 60 70 N d, D R A IN E F F IC IE N C Y ( % ) 500 MHz 480 MHz 520 MHz Pin = .5 W Vdd = 12.5 V

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November 14, 2020

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November 1, 2020

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November 1, 2020

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October 23, 2020

Excellent service and product arrives in reasonable shipping rates. Well done!

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October 22, 2020

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