Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811
Language Translation
  • • English
  • • Español
  • • Deutsch
  • • Français
  • • Italiano
  • • Nederlands
  • • Português
  • • русский язык
  • • 日本語
  • • 한국어
  • • 简体中文
  • • 繁體中文

* Please refer to the English Version as our Official Version.

Change Country

If your country is not listed, please select International as your region.

  • International
Americas
  • Argentina
  • Brasil
  • Canada
  • Chile
  • Colombia
  • Costa Rica
  • Dominican Republic
  • Ecuador
  • Guatemala
  • Honduras
  • Mexico
  • Peru
  • Puerto Rico
  • United States
  • Uruguay
  • Venezuela
Asia/Pacific
  • Australia
  • China
  • Hong Kong
  • Indonesia
  • Israel
  • India
  • Japan
  • Korea, Republic of
  • Malaysia
  • New Zealand
  • Philippines
  • Singapore
  • Thailand
  • Taiwan
  • Vietnam
Europe
  • Austria
  • Belgium
  • Bulgaria
  • Switzerland
  • Czech Republic
  • Germany
  • Denmark
  • Estonia
  • Spain
  • Finland
  • France
  • United Kingdom
  • Greece
  • Croatia
  • Hungary
  • Ireland
  • Italy
  • Netherlands
  • Norway
  • Poland
  • Portugal
  • Romania
  • Russian Federation
  • Sweden
  • Slovakia
  • Turkey

PMGD280UN,115

PMGD280UN,115

PMGD280UN,115

For Reference Only

Part Number PMGD280UN,115
Manufacturer Nexperia USA Inc.
Description MOSFET 2N-CH 20V 0.87A 6TSSOP
Datasheet PMGD280UN,115 Datasheet
Package 6-TSSOP, SC-88, SOT-363
In Stock 117250 piece(s)
Unit Price $ 0.1307 *
Please request a real-time quote with our sales team. The unit price would influenced by the quantity requested and the supply sources. Thank you!
Lead Time To be Confirmed
Estimated Delivery Time Mar 2 - Mar 7 (Choose Expedited Shipping)
Winter Hot Sale

* Free Shipping * Up to $100 Discount

Winter Hot Sale

Request for Quotation

PMGD280UN,115

Quantity
  • We are offering PMGD280UN,115 for competitive price in the global market, please send us a quota request for pricing. Thank you!
  • To process your RFQ, please add PMGD280UN,115 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of PMGD280UN,115.
  • To learn about the specification of PMGD280UN,115, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
Payment Methods
Delivery Services

Do you have any question about PMGD280UN,115?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

PMGD280UN,115 Specifications

ManufacturerNexperia USA Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet PMGD280UN,115 Datasheet
Package6-TSSOP, SC-88, SOT-363
SeriesTrenchMOS?
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25��C870mA
Rds On (Max) @ Id, Vgs340 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds45pF @ 20V
Power - Max400mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device Package6-TSSOP

PMGD280UN,115 Datasheet

Page 1

Page 2

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Page 3

PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FET Rev. 01 — 10 February 2004 Product dataMBD1281. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information ■ Surface mounted package ■ Footprint 40% smaller than SOT23 ■ Dual device ■ Fast switching ■ Low on-state resistance ■ Low threshold voltage. ■ Driver circuits ■ Switching in portable appliances. ■ VDS ≤ 20 V ■ ID ≤ 0.87 A ■ Ptot ≤ 0.41 W ■ RDSon ≤ 340 mΩ. Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description Simplified outline Symbol 1 source (s1) SOT363 (SC-88) 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) 6 drain (d1) MSA370 1 2 3 6 5 4 Top view s1 d1 g1 s2 MSD901 d2 g2

Page 4

Philips Semiconductors PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FET3. Ordering information 4. Limiting values [1] Single device conducting. Table 2: Ordering information Type number Package Name Description Version PMGD280UN SC-88 Plastic surface mounted package; 6 leads SOT363 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 20 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 20 V VGS gate-source voltage (DC) - ±8 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 [1] - 0.87 A Tsp = 100 °C; VGS = 4.5 V; Figure 2 [1] - 0.55 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 [1] - 1.75 A Ptot total power dissipation Tsp = 25 °C; Figure 1 - 0.4 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C [1] - 0.34 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs [1] - 0.69 AProduct data Rev. 01 — 10 February 2004 2 of 12 9397 750 12763 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Page 5

Philips Semiconductors PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FETFig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa17 0 40 80 120 0 50 100 150 200 (%) Tsp (°C) Pder 03aa25 0 40 80 120 0 50 100 150 200 Tsp (°C) Ider (%) Pder Ptot P tot 25 C°( ) ---------------------- 100%×= Ider ID I D 25 C°( ) ------------------- 100%×= 03an09 10-2 10-1 1 10 10-1 1 10 102 VDS (V) ID (A) DC 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 µs 100 ms 100 µsProduct data Rev. 01 — 10 February 2004 3 of 12 9397 750 12763 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Page 6

Philips Semiconductors PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FET5. Thermal characteristics 5.1 Transient thermal impedance Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 300 K/W Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 03an28 1 10 102 103 10-4 10-3 10-2 10-1 1 10 tp (s) Zth(j-sp) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp tp T P t T δ =Product data Rev. 01 — 10 February 2004 4 of 12 9397 750 12763 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Page 7

Philips Semiconductors PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FET6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 1 µA; VGS = 0 V Tj = 25 °C 20 - - V Tj = −55 °C 18 - - V VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; Figure 9 Tj = 25 °C 0.45 0.7 1 V Tj = 150 °C 0.25 - - V Tj = −55 °C - - 1.2 V IDSS drain-source leakage current VDS = 20 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 0.2 A; Figure 7 and 8 Tj = 25 °C - 280 340 mΩ Tj = 150 °C - 448 544 mΩ VGS = 2.5 V; ID = 0.1 A; Figure 7 and 8 - 360 430 mΩ VGS = 1.8 V; ID = 0.075 A; Figure 7 and 8 - 460 660 mΩ Dynamic characteristics Qg(tot) total gate charge ID = 1 A; VDD = 10 V; VGS = 4.5 V; Figure 13 - 0.89 - nC Qgs gate-source charge - 0.13 - nC Qgd gate-drain (Miller) charge - 0.18 - nC Ciss input capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11 - 45 - pF Coss output capacitance - 11 - pF Crss reverse transfer capacitance - 7 - pF td(on) turn-on delay time VDD = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω - 4.5 - ns tr rise time - 10 - ns td(off) turn-off delay time - 18.5 - ns tf fall time - 5 - ns Source-drain diode VSD source-drain (diode forward) voltage IS = 0.3 A; VGS = 0 V; Figure 12 - 0.83 1.2 VProduct data Rev. 01 — 10 February 2004 5 of 12 9397 750 12763 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Page 8

Philips Semiconductors PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FETTj = 25 °C Tj = 25 °C and 150 °C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj = 25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03an02 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 VDS (V) ID (A) 4.5 V 3 V 2.5 V 2 V 1.8 V VGS = 1.5 V 03an04 0 0.5 1 1.5 2 2.5 0 1 2 3 4 VGS (V) ID (A) VDS > ID x RDSon Tj = 150 °C25 °C 03an03 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 ID (A) RDSon (Ω) 4.5 V 3 V 2.5 V 2 V VGS = 1.8 V 03af18 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a a RDSon R DSon 25 C°( ) ----------------------------=Product data Rev. 01 — 10 February 2004 6 of 12 9397 750 12763 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Page 9

Philips Semiconductors PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FETID = 0.25 mA; VDS = VGS Tj = 25 °C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aj65 0 0.2 0.4 0.6 0.8 1 -60 0 60 120 180 Tj (°C) VGS(th) (V) min typ 03am43 10-6 10-5 10-4 10-3 0 0.2 0.4 0.6 0.8 VGS (V) ID (A) typmin 03an06 1 10 102 10-1 1 10 102 VDS (V) C (pF) Ciss Coss CrssProduct data Rev. 01 — 10 February 2004 7 of 12 9397 750 12763 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Page 10

Philips Semiconductors PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FETTj = 25 °C and 150 °C; VGS = 0 V ID = 1 A; VDD = 10 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03an05 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 VSD (V) IS (A) Tj = 25 °C150 °C VGS = 0 V 03an07 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 QG (nC) VGS (V) ID = 1 A Tj = 25 °C VDD = 10 VProduct data Rev. 01 — 10 February 2004 8 of 12 9397 750 12763 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

PMGD280UN,115 Reviews

Average User Rating
5 / 5 (170)
★ ★ ★ ★ ★
5 ★
153
4 ★
17
3 ★
0
2 ★
0
1 ★
0

Joel*****andit

February 10, 2020

FAST POSTING TOP CONDITION RECORD HAVE A GREAT CHRISTMAS

Amee*****nerjee

December 28, 2019

Awesome selection! Great service for whatever electronic parts you want! Prices are competitive as well. Thank you!

Tal*****Reese

December 26, 2019

Great service as always from this supplier. Already bought many times

Lean*****rice

November 6, 2019

Those components that were in stock shipped fast and arrived promptly.

Desi*****Narang

October 26, 2019

Can't speak to the long term reliability as of yet, but they seem to be of decent quality and I don't expect any issues.

Brook*****ayden

October 2, 2019

Heisener is awesome! Never any issues whatsoever. Product selection is good and delivery is on time.

Nola*****azier

September 27, 2019

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

Ala*****Huang

September 19, 2019

Your technical assistance and professionalism cannot be complained!

Cryst*****clure

September 1, 2019

So easy to do business with Heisener and they generally have stock on the items we need.

Adal*****ennis

August 23, 2019

It is so great to order from a supplier that provides so many shipping options at reasonable cost. It couldn't be any easier to order from Heisener. Great job!

PMGD280UN,115 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

PMGD280UN,115 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

PMGD280UN,115 Related Products

PMGD280UN,115 ON5194,127 Nexperia USA Inc., MOSFET POWER TRENCH I2PAK, -, TrenchMOS? View
PMGD280UN,115 BUK7109-75ATE,118 Nexperia USA Inc., MOSFET N-CH 75V 75A D2PAK, TO-263-5, D2Pak (4 Leads + Tab), TO-263BB, TrenchMOS? View
PMGD280UN,115 PMGD175XN,115 NXP, MOSFET 2N-CH 30V 0.9A 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD130UN,115 NXP, MOSFET 2N-CH 20V 1.2A 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD370XN,115 Nexperia USA Inc., MOSFET 2N-CH 30V 0.74A 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD400UN,115 NXP, MOSFET 2N-CH 30V 0.71A 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD8000LN,115 NXP, MOSFET 2N-CH 30V 0.125A 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD175XNEAX Nexperia USA Inc., MOSFET ARRAY 2N-CH 30V SOT363, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD175XNEX Nexperia USA Inc., MOSFET ARRAY 2NCH 30V 6-TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD780SN,115 Nexperia USA Inc., MOSFET 2N-CH 60V 0.49A 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD290XN,115 Nexperia USA Inc., MOSFET 2N-CH 20V 0.86A 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View
PMGD280UN,115 PMGD290UCEAX Nexperia USA Inc., MOSFET N/P-CH 20V 6TSSOP, 6-TSSOP, SC-88, SOT-363, TrenchMOS? View

PMGD280UN,115 Tags

  • PMGD280UN,115
  • PMGD280UN,115 PDF
  • PMGD280UN,115 datasheet
  • PMGD280UN,115 specification
  • PMGD280UN,115 image
  • Nexperia USA Inc.
  • Nexperia USA Inc. PMGD280UN,115
  • buy PMGD280UN,115
  • PMGD280UN,115 price
  • PMGD280UN,115 distributor
  • PMGD280UN,115 supplier
  • PMGD280UN,115 wholesales

PMGD280UN,115 is Available in