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PSMN005-30K,518

hot PSMN005-30K,518

PSMN005-30K,518

For Reference Only

Part Number PSMN005-30K,518
Heisener # H299-PSMN005-30K,518
Manufacturer Nexperia USA Inc.
Description MOSFET N-CH 30V 20A SOT96-1
Datasheet PSMN005-30K,518 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 4800
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time May 25 - May 30 (Choose Expedited Shipping)

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PSMN005-30K,518

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PSMN005-30K,518 Specifications

ManufacturerNexperia USA Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet PSMN005-30K,518 Datasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesTrenchMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs34nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 25V
Power Dissipation (Max)3.5W (Tc)
Rds On (Max) @ Id, Vgs5.5 mOhm @ 15A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

PSMN005-30K,518 Datasheet

PSMN005-30K,518 Related Products

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hotPSMN005-30K,518 PSMN038-100K,518 Nexperia USA Inc., MOSFET N-CH 100V SOT96-1, 8-SOIC (0.154", 3.90mm Width), TrenchMOS?
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hotPSMN005-30K,518 PSMN013-30YLC,115 Nexperia USA Inc., MOSFET N-CH 30V 32A LFPAK, Package:SC-100, SOT-669, Series:TrenchMOS? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:20A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs:34nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V, Power Dissipation (Max):3.5W (Tc), Rds On (Max) @ Id, Vgs:5.5 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:8-SO, Package / Case:8-SOIC (0.154", 3.90mm Width)
hotPSMN005-30K,518 PSMN035-150B,118 Nexperia USA Inc., MOSFET N-CH 150V 50A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:TrenchMOS? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:20A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs:34nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V, Power Dissipation (Max):3.5W (Tc), Rds On (Max) @ Id, Vgs:5.5 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:8-SO, Package / Case:8-SOIC (0.154", 3.90mm Width)
hotPSMN005-30K,518 PSMN012-80BS,118 Nexperia USA Inc., MOSFET N-CH 80V 74A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:TrenchMOS? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:20A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs:34nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V, Power Dissipation (Max):3.5W (Tc), Rds On (Max) @ Id, Vgs:5.5 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:8-SO, Package / Case:8-SOIC (0.154", 3.90mm Width)
hotPSMN005-30K,518 PSMN012-100YS,115 Nexperia USA Inc., MOSFET N-CH 100V 60A LFPAK, Package:SC-100, SOT-669, Series:TrenchMOS? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:20A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs:34nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V, Power Dissipation (Max):3.5W (Tc), Rds On (Max) @ Id, Vgs:5.5 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:8-SO, Package / Case:8-SOIC (0.154", 3.90mm Width)
hotPSMN005-30K,518 PSMN020-100YS,115 Nexperia USA Inc., MOSFET N-CH 100V 43A LFPAK, Package:SC-100, SOT-669, Series:TrenchMOS? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:20A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs:34nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V, Power Dissipation (Max):3.5W (Tc), Rds On (Max) @ Id, Vgs:5.5 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:8-SO, Package / Case:8-SOIC (0.154", 3.90mm Width)
hotPSMN005-30K,518 PSMN039-100YS,115 Nexperia USA Inc., MOSFET N-CH LFPAK, Package:SC-100, SOT-669, Series:TrenchMOS? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:20A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs:34nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 25V, Power Dissipation (Max):3.5W (Tc), Rds On (Max) @ Id, Vgs:5.5 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:8-SO, Package / Case:8-SOIC (0.154", 3.90mm Width)

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