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PSMN2R2-40PS,127

hot PSMN2R2-40PS,127

PSMN2R2-40PS,127

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Part Number PSMN2R2-40PS,127
Manufacturer Nexperia USA Inc.
Description MOSFET N-CH 40V 100A TO220AB
Datasheet PSMN2R2-40PS,127 Datasheet
Package TO-220-3
In Stock 2000 piece(s)
Unit Price $ 2.19 *
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PSMN2R2-40PS,127

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PSMN2R2-40PS,127 Specifications

ManufacturerNexperia USA Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet PSMN2R2-40PS,127 Datasheet
PackageTO-220-3
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25��C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds8423pF @ 20V
Vgs (Max)��20V
Power Dissipation (Max)306W (Tc)
Rds On (Max) @ Id, Vgs2.1 mOhm @ 25A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

PSMN2R2-40PS,127 Datasheet

Page 1

Page 2

PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET 22 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive sources 3. Applications • DC-to-DC convertors • Load switching • Motor control • Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 3; Fig. 1 - - 100 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 306 W Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 [1] - 1.75 2.1 mΩ Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 80 A; VDS = 20 V; Fig. 14; Fig. 15 - 25 - nC [1] Measured 3 mm from package.

Page 3

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 2 / 13 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 D drain 3 S source mb D drain 1 2 mb 3 TO-220AB (SOT78) S D G mbb076 6. Ordering information Table 3. Ordering information PackageType number Name Description Version PSMN2R2-40PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code PSMN2R2-40PS PSMN2R2-40PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 40 V VGS gate-source voltage -20 20 V VGS = 10 V; Tmb = 100 °C; Fig. 1 - 100 AID drain current VGS = 10 V; Tmb = 25 °C; Fig. 3; Fig. 1 - 100 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1122 A

Page 4

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 3 / 13 Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 306 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 100 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1122 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω - 1.24 J 003aak896 0 50 100 150 200 0 50 100 150 200 250 300 Tj (°C) ID (A) (1) (1) Capped at 100 A due to package Fig. 1. Continuous drain current as a function of mounting base temperature Tmb (°C) 0 20015050 100 03aa16 40 80 120 Pder (%) 0 Fig. 2. Normalized total power dissipation as a function of mounting base temperature

Page 5

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 4 / 13 003aad316 1 10 102 103 104 10-1 1 10 102VDS (V) ID (A) Limit RDSon = VDS / ID DC (1) 100 ms 10 ms 1 ms 100 µs tp = 10 µs Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.25 0.5 K/W 003aad100 10-4 10-3 10-2 10-1 1 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Zth (j-mb) (K/W) single shot 0.02 0.05 0.1 0.2 δ = 0.5 tp T P t tp T δ = Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

Page 6

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 5 / 13 10. Characteristics Table 7. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit Static characteristics ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 - - 4.6 V ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 10 1 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 11; Fig. 10 2 3 4 V VDS = 40 V; VGS = 0 V; Tj = 25 °C - - 10 µAIDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 125 °C - - 200 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 12; Fig. 13 - 2.4 2.85 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 12; Fig. 13 - 3.25 3.9 mΩ RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 [1] - 1.75 2.1 mΩ RG internal gate resistance (AC) f = 1 MHz - 1 - Ω Dynamic characteristics ID = 0 A; VDS = 0 V; VGS = 10 V - 110 - nCQG(tot) total gate charge - 130 - nC QGS gate-source charge - 42 - nC QGS(th) pre-threshold gate- source charge - 24 - nC QGS(th-pl) post-threshold gate- source charge - 18 - nC QGD gate-drain charge ID = 80 A; VDS = 20 V; VGS = 10 V; Fig. 14; Fig. 15 - 25 - nC VGS(pl) gate-source plateau voltage ID = 80 A; VDS = 20 V; Fig. 14; Fig. 15 - 4.95 - V Ciss input capacitance - 8423 - pF Coss output capacitance VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 16 - 1671 - pF

Page 7

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit Crss reverse transfer capacitance - 814 - pF td(on) turn-on delay time - 33.2 - ns tr rise time - 40.4 - ns td(off) turn-off delay time - 66.6 - ns tf fall time VDS = 20 V; RL = 0.25 Ω; VGS = 10 V; RG(ext) = 1.5 Ω - 25.2 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V - 53.7 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C - 80.75 - nC [1] Measured 3 mm from package. 003aad116 0 50 100 150 200 250 300 0 1 2 3 4 VDS (V) ID (A) 5.5VGS (V) = 8 6 5 4.5 10 20 Fig. 5. Output characteristics: drain current as a function of drain-source voltage; typical values 003aad118 0 50 100 150 200 250 0 1.5 3 4.5 6 VGS (V) ID (A) 25 °C175 °C Fig. 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values

Page 8

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 7 / 13 003aad122 2000 4000 6000 8000 10000 12000 10-1 1 10 VGS (V) C (pf) Ciss Crss Fig. 7. Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad123 0 50 100 150 200 250 0 50 100 150 200 ID (A) gfs (S) Fig. 8. Forward transconductance as a function of drain current; typical values 003aad124 0 5 10 15 20 25 30 0 5 10 15 20 VGS (V) RDS(on) (mΩ) Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values Tj (°C) - 60 1801200 60 003aad280 2 3 1 4 5 VGS(th) (V) 0 max typ min Fig. 10. Gate-source threshold voltage as a function of junction temperature

Page 9

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 8 / 13 03aa35 VGS (V) 0 642 10- 4 10- 5 10- 2 10- 3 10- 1 ID (A) 10- 6 min typ max Fig. 11. Sub-threshold drain current as a function of gate-source voltage 003aad117 1 2 3 4 5 6 0 50 100 150 200 250 300 ID (A) RDSon (mΩ) 5VGS (V) = 6 5.5 8 20 10 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values 03aa27 0 0.5 1 1.5 2 - 60 0 60 120 180Tj (°C) a Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 14. Gate charge waveform definitions

Page 10

© Nexperia B.V. 2017. All rights reserved Nexperia PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET PSMN2R2-40PS All information provided in this document is subject to legal disclaimers. Product data sheet 22 February 2013 9 / 13 003aad120 0 2 4 6 8 10 0 50 100 150 QG (nC) VGS (V) VDS = 20V VDS = 10 V Fig. 15. Gate-source voltage as a function of gate charge; typical values 003aad121 0 4000 8000 12000 10-1 1 10 102 VDS (V) C (pF) Ciss Crss Coss Fig. 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aad119 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1Vsd (V) IS (A) Tj = 175 °C 25 °C Fig. 17. Source current as a function of source-drain voltage; typical values

PSMN2R2-40PS,127 Reviews

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Hay***** Pant

January 2, 2020

Order arrived to Estonia in 3 days. Item as described. Well packed.

Eric*****mpton

December 20, 2019

The best choice, clear and easy to make an order. Gives me full control.

Tys*****Lad

October 19, 2019

Very easy to find and order what I wanted. Being able to add multiple items in various quantities from an online catalog page with a simple click.

Riv*****Gupta

October 17, 2019

So easy to do business with Heisener and they generally have stock on the items we need.

Izab***** Hill

September 9, 2019

Work Great. Would recommend. Only used 2. So I have 248 extras. Best deal by far that's why I got these.

Math*****anchal

August 25, 2019

They work great and I hope to find more used for the extra ones.

Sie*****Pratt

August 24, 2019

I received technical certification with a good staff. They have good fair prices on brand names.

Corali*****hmbhatt

August 14, 2019

Super Fast Delivery & Well Packaged - Great Service - No Problems

Harl*****onrad

July 29, 2019

Very professional sellers, they have adopted MSL packaging for different parts.

Tom*****Watts

July 17, 2019

Absolutely awesome, quick delivery, perfect product exactly as described!

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