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PZU33BA,115

hot PZU33BA,115

PZU33BA,115

For Reference Only

Part Number PZU33BA,115
Manufacturer Nexperia USA Inc.
Description DIODE ZENER 33V 320MW SOD323
Datasheet PZU33BA,115 Datasheet
Package SC-76, SOD-323
In Stock 6000 piece(s)
Unit Price $ 0.0444 *
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PZU33BA,115

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PZU33BA,115 Specifications

ManufacturerNexperia USA Inc.
CategoryDiscrete Semiconductor Products - Diodes - Zener - Single
Datasheet PZU33BA,115 Datasheet
PackageSC-76, SOD-323
Series-
Voltage - Zener (Nom) (Vz)33V
Tolerance±5%
Power - Max320mW
Impedance (Max) (Zzt)40 Ohms
Current - Reverse Leakage @ Vr50nA @ 25V
Voltage - Forward (Vf) (Max) @ If1.1V @ 100mA
Operating Temperature-55°C ~ 150°C
Mounting TypeSurface Mount
Package / CaseSC-76, SOD-323
Supplier Device PackageSOD-323

PZU33BA,115 Datasheet

Page 1

Page 2

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Page 3

1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications n General regulation functions 1.4 Quick reference data [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PZUxBA series Single Zener diodes Rev. 01 — 19 September 2008 Product data sheet n Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W n Low reverse current IR range n Total power dissipation: Ptot ≤ 320 mW n Small plastic package suitable for surface-mounted design n Tolerance series: B: approximately ±5 %; B1, B2, B3: approximately ±2 % n AEC-Q101 qualified n Wide working voltage range: nominal 2.4 V to 36 V (E24 range) Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 100 mA [1] - - 1.1 V PZSM non-repetitive peak reverse power dissipation [2] - - 40 W Ptot total power dissipation Tamb ≤ 25 °C [3] - - 320 mW

Page 4

NXP Semiconductors PZUxBA series Single Zener diodes2. Pinning information [1] The marking bar indicates the cathode. 3. Ordering information [1] The series consists of 97 types with nominal working voltages from 2.4 V to 36 V. [2] /DG: halogen-free Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 2 anode 21 006aaa152 21 Table 3. Ordering information Type number Package Name Description Version PZU2.4BA to PZU36BA[1] SC-76 plastic surface-mounted package; 2 leads SOD323 PZU2.4BA/DG to PZU36BA/DG[1][2]PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 19 September 2008 2 of 14

Page 5

NXP Semiconductors PZUxBA series Single Zener diodes4. Marking [1] * = B: tolerance series B, approximately ±5 % * = B1, B2, B3: tolerance series B1, B2, B3: approximately ±2 % Table 4. Marking codes Type number[1] Marking code Type number[1] Marking code B B1 B2 B3 B B1 B2 B3 PZU2.4*A X8 - - - PZU2.4*A/DG Y8 - - - PZU2.7*A X9 XA XB - PZU2.7*A/DG Y9 YA YB - PZU3.0*A XT XU XV - PZU3.0*A/DG YT YU YV - PZU3.3*A XW XX XY - PZU3.3*A/DG YW YX YY - PZU3.6*A XZ MC MD - PZU3.6*A/DG YZ NC ND - PZU3.9*A ME MF MG - PZU3.9*A/DG NE NF NG - PZU4.3*A MM MN MP MR PZU4.3*A/DG NM NN NP NR PZU4.7*A MS MT MU MV PZU4.7*A/DG NS NT NU NV PZU5.1*A MW MX MY MZ PZU5.1*A/DG NW NX NY NZ PZU5.6*A LF LG LH LK PZU5.6*A/DG RF RG RH RK PZU6.2*A LL LM LN LP PZU6.2*A/DG RL RM RN RP PZU6.8*A LR LS LT LU PZU6.8*A/DG RR RS RT RU PZU7.5*A LV LW LX LY PZU7.5*A/DG RV RW RX RY PZU8.2*A LZ CR CS CT PZU8.2*A/DG RZ ER ES ET PZU9.1*A CU CV CW CX PZU9.1*A/DG EU EV EW EX PZU10*A VA VB VC VD PZU10*A/DG WA WB WC WD PZU11*A VE VF VG VH PZU11*A/DG WE WF WG WH PZU12*A VK VL VM VN PZU12*A/DG WK WL WM WN PZU13*A VP VR VS VT PZU13*A/DG WP WR WS WT PZU14*A - - VU - PZU14*A/DG - - WU - PZU15*A VV VW VX VY PZU15*A/DG WV WW WX WY PZU16*A VZ X1 X2 X3 PZU16*A/DG WZ Y1 Y2 Y3 PZU18*A X4 X5 X6 X7 PZU18*A/DG Y4 Y5 Y6 Y7 PZU20*A XC XD XE XF PZU20*A/DG YC YD YE YF PZU22*A XG XH XK XL PZU22*A/DG YG YH YK YL PZU24*A XM XN XP XR PZU24*A/DG YM YN YP YR PZU27*A XS - - - PZU27*A/DG YS - - - PZU30*A MH - - - PZU30*A/DG NH - - - PZU33*A MK - - - PZU33*A/DG NK - - - PZU36*A ML - - - PZU36*A/DG NL - - -PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 19 September 2008 3 of 14

Page 6

NXP Semiconductors PZUxBA series Single Zener diodes5. Limiting values [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IF forward current - 200 mA IZSM non-repetitive peak reverse current [1] - see Table 8 and 9 PZSM non-repetitive peak reverse power dissipation [1] - 40 W Ptot total power dissipation Tamb ≤ 25 °C [2] - 320 mW [3] - 490 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 390 K/W [2] - - 255 K/W Rth(j-sp) thermal resistance from junction to solder point [3] - - 55 K/W Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 10 mA - - 0.9 V IF = 100 mA - - 1.1 VPZUXBA_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 19 September 2008 4 of 14

Page 7

NXP Semiconductors PZUxBA series Single Zener diodes[1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge Table 8. Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG Tj = 25 °C unless otherwise specified. PZUxBA Sel Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (µA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF) [1] Non-repetitive peak reverse current IZSM (A) [2] IZ = 5 mA IZ = 0.5 mA IZ = 5 mA IZ = 5 mA Min Max Max Max Max VR (V) Typ Max Max 2.4 B 2.3 2.6 1000 100 50 1 −1.6 450 8 2.7 B 2.5 2.9 1000 100 20 1 −2.0 440 8 B1 2.5 2.75 B2 2.65 2.9 3.0 B 2.8 3.2 1000 95 10 1 −2.1 425 8 B1 2.8 3.05 B2 2.95 3.2 3.3 B 3.1 3.5 1000 95 5 1 −2.4 410 8 B1 3.1 3.35 B2 3.25 3.5 3.6 B 3.4 3.8 1000 90 5 1 −2.4 390 8 B1 3.4 3.65 B2 3.55 3.8 3.9 B 3.7 4.1 1000 90 3 1 −2.5 370 8 B1 3.7 3.97 B2 3.87 4.10 4.3 B 4.01 4.48 1000 90 3 1 −2.5 350 8 B1 4.01 4.21 B2 4.15 4.34 B3 4.28 4.48 4.7 B 4.42 4.9 800 80 2 1 −1.4 325 8 B1 4.42 4.61 B2 4.55 4.75 B3 4.69 4.9 5.1 B 4.84 5.37 250 60 2 1.5 0.3 300 5.5 B1 4.84 5.04 B2 4.98 5.2 B3 5.14 5.37 5.6 B 5.31 5.92 100 40 1 2.5 1.9 275 5.5 B1 5.31 5.55 B2 5.49 5.73 B3 5.67 5.92PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 19 September 2008 5 of 14

Page 8

NXP Semiconductors PZUxBA series Single Zener diodesTable 9. Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG Tj = 25 °C unless otherwise specified. PZUxBA Sel Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (nA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF) [1] Non-repetitive peak reverse current IZSM (A) [2] IZ = 5 mA IZ = 0.5 mA IZ = 5 mA IZ = 5 mA Min Max Max Max Max VR (V) Typ Max Max 6.2 B 5.86 6.53 80 30 500 3 2.7 250 5.5 B1 5.86 6.12 B2 6.06 6.33 B3 6.26 6.53 6.8 B 6.47 7.14 60 20 500 3.5 3.4 215 5.5 B1 6.47 6.73 B2 6.65 6.93 B3 6.86 7.14 7.5 B 7.06 7.84 60 10 500 4 4.0 170 3.5 B1 7.06 7.36 B2 7.28 7.60 B3 7.52 7.84 8.2 B 7.76 8.64 60 10 500 5 4.6 150 3.5 B1 7.76 8.1 B2 8.02 8.36 B3 8.28 8.64 9.1 B 8.56 9.55 60 10 500 6 5.5 120 3.5 B1 8.56 8.93 B2 8.85 9.23 B3 9.15 9.55 10 B 9.45 10.55 60 10 100 7 6.4 110 3.5 B1 9.45 9.87 B2 9.77 10.21 B3 10.11 10.55 11 B 10.44 11.56 60 10 100 8 7.4 108 3 B1 10.44 10.88 B2 10.76 11.22 B3 11.1 11.56 12 B 11.42 12.6 80 10 100 9 8.4 105 3 B1 11.42 11.9 B2 11.74 12.24 B3 12.08 12.6 13 B 12.47 13.96 80 10 100 10 9.4 103 2.5 B1 12.47 13.03 B2 12.91 13.49 B3 13.37 13.96PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 19 September 2008 6 of 14

Page 9

NXP Semiconductors PZUxBA series Single Zener diodes[1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge 14 B2 13.70 14.30 80 10 100 11 10.4 101 2 15 B 13.84 15.52 80 15 50 11 11.4 99 2 B1 13.84 14.46 B2 14.34 14.98 B3 14.85 15.52 16 B 15.37 17.09 80 20 50 12 12.4 97 1.5 B1 15.37 16.01 B2 15.85 16.51 B3 16.35 17.09 18 B 16.94 19.03 80 20 50 13 14.4 93 1.5 B1 16.94 17.7 B2 17.56 18.35 B3 18.21 19.03 20 B 18.86 21.08 100 20 50 15 16.4 88 1.5 B1 18.86 19.7 B2 19.52 20.39 B3 20.21 21.08 22 B 20.88 23.17 100 25 50 17 18.4 84 1.3 B1 20.88 21.77 B2 21.54 22.47 B3 22.23 23.17 24 B 22.93 25.57 120 30 50 19 20.4 80 1.3 B1 22.93 23.96 B2 23.72 24.78 B3 24.54 25.57 27 B 25.1 28.9 150 40 50 21 23.4 73 1 30 B 28 32 200 40 50 23 26.6 66 1 33 B 31 35 250 40 50 25 29.7 60 0.9 36 B 34 38 300 60 50 27 33.0 59 0.8 Table 9. Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG …continued Tj = 25 °C unless otherwise specified. PZUxBA Sel Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (nA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF) [1] Non-repetitive peak reverse current IZSM (A) [2] IZ = 5 mA IZ = 0.5 mA IZ = 5 mA IZ = 5 mA Min Max Max Max Max VR (V) Typ Max MaxPZUXBA_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 19 September 2008 7 of 14

Page 10

NXP Semiconductors PZUxBA series Single Zener diodesTj = 25 °C (prior to surge) Tj = 25 °C Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 2. Forward current as a function of forward voltage; typical values Tj = 25 °C to 150 °C VZ = 2.4 V to 4.3 V Tj = 25 °C to 150 °C VZ = 4.7 V to 12 V Fig 3. Temperature coefficient as a function of working current; typical values Fig 4. Temperature coefficient as a function of working current; typical values 006aab215 102 10 103 PZSM (W) 1 tp (s) 10−4 10−210−3 VF (V) 0.6 10.8 mbg781 100 200 300 IF (mA) 0 0 60 0 −2 −3 −1 mgl273 20 40 IZ (mA) SZ (mV/K) 4.3 3.9 3.6 3.3 3.0 2.4 2.7 0 2016 10 0 −5 5 mgl274 4 8 12 IZ (mA) SZ (mV/K) 4.7 12 11 10 9.1 8.2 7.5 6.8 6.2 5.6 5.1PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 19 September 2008 8 of 14

PZU33BA,115 Reviews

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Dill*****cbride

February 2, 2020

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January 5, 2020

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December 27, 2019

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December 18, 2019

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December 12, 2019

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November 25, 2019

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November 13, 2019

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September 29, 2019

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September 19, 2019

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September 15, 2019

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