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RSS075P03FU6TB

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RSS075P03FU6TB

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Part Number RSS075P03FU6TB
Manufacturer Rohm Semiconductor
Description MOSFET P-CH 30V 7.5A 8SOIC
Datasheet RSS075P03FU6TB Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 4,280 piece(s)
Unit Price $ 0.7414 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 28 - Feb 2 (Choose Expedited Shipping)
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Part Number # RSS075P03FU6TB (Transistors - FETs, MOSFETs - Single) is manufactured by Rohm Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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RSS075P03FU6TB Specifications

ManufacturerRohm Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet RSS075P03FU6TBDatasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs30nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 10V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)2W (Ta)
Rds On (Max) @ Id, Vgs21 mOhm @ 7.5A, 10V
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

RSS075P03FU6TB Datasheet

Page 1

Page 2

RSS075P03 Transistors Rev.A 1/4 Switching (−30V, −7.5A) RSS075P03 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Structure Silicon P-channel MOS FET External dimensions (Unit : mm) Each lead has same dimensions SOP8 3.9 6.0 0.4Min. 5 .0 1 .2 7 0 .2 1 .7 5 ( 1 ) ( 4 ) ( 8 ) ( 5 ) 0 .4 Packaging specifications Package Code Taping Basic ordering unit (pieces) RSS075P03 TB 2500 Type Absolute maximum ratings (Ta=25°C) ∗1 ∗1 ∗2 Parameter VVDSS Symbol −30 VVGSS ±20 AID ±7.5 AIDP ±30 AIS −1.6 AISP −30 WPD 2.0 °CTch 150 °CTstg −55 to +150 Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Source current (Body diode) Equivalent circuit (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗2 ∗1 (8) (7) (6) (5) (1) (2) (3) (4) Thermal resistance (Ta=25°C) °C / WRth (ch-a) 62.5 Parameter Symbol Limits Unit Channel to ambient ∗ Mounted on a ceramic board. ∗

Page 3

RSS075P03 Transistors Rev.A 2/4 Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Yfs Min. Typ. Max. Unit Conditions V(BR) DSS IDSS VGS (th) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Body diode characteristics (source-drain characteristics) VSD − − −1.2 VForward voltage Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge IS= −1.6A, VGS=0V − − ±10 µA VGS=±20V, VDS=0V VDD −15V −30 − − V ID= −1mA, VGS=0V − − −1 µA VDS= −30V, VGS=0V −1.0 − −2.5 V VDS= −10V, ID= −1mA − 15 21 ID= −7.5A, VGS= −10V − 22 31 mΩ mΩ mΩ ID= −4.0A, VGS= −4.5V − 25 35 ID= −4.0A, VGS= −4.0V 6.0 − − S VDS= −10V, ID= −4.0A − 2900 − pF VDS= −10V − 540 430 − pF VGS=0V − 20 − pF f=1MHz − 35 − ns − 85 − ns − 90 − ns − 30 − ns − 5.5 − nC − 12 − nC VGS= −5V − − nC ID= −7.5A VDD −15V ID= −4.0A VGS= −10V RL=3.75Ω RGS=10Ω ∗Pulsed ∗ ∗ ∗ ∗ ∗ ∗

Page 4

RSS075P03 Transistors Rev.A 3/4 Electrical characteristic curves 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 GATE-SOURCE VOLTAGE : −VGS (V) 0.001 0.01 0.1 1 10 D R A IN C U R R E N T : − I D ( A ) Fig.1 Typical Transfer Characteristics Ta= −25°C Ta=25°C Ta=75°C Ta=125°C VDS= −10V Pulsed 0.1 1 10 DRAIN CURRENT : −ID (A) 1 10 100 S T A T IC D R A IN -S O U R C E O N -S T A T E R E S IS T A N C E : R D S ( o n ) (m Ω ) Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Ta=25°C Pulsed VGS= −4V VGS= −4.5V VGS= −10V VGS= −10V Pulsed Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Ta= −25°C Ta=25°C Ta=75°C Ta=125°C DRAIN CURRENT : −ID (A) S T A T IC D R A IN -S O U R C E O N -S T A T E R E S IS T A N C E : R D S ( o n ) (m Ω ) 0.1 1 10 1 10 100 0.1 1 10 1 10 100 DRAIN CURRENT : −ID (A) S T A T IC D R A IN -S O U R C E O N -S T A T E R E S IS T A N C E : R D S ( o n ) (m Ω ) Fig.4 Static Drain-Source On-State vs. Drain Current Ta= −25°C Ta=25°C Ta=75°C Ta=125°C VGS= −4.5V Pulsed 0.1 1 10 1 10 100 VGS= −4V Pulsed DRAIN CURRENT : −ID (A) S T A T IC D R A IN -S O U R C E O N -S T A T E R E S IS T A N C E : R D S ( o n ) (m Ω ) Fig.5 Static Drain-Source On-State vs. Drain Current Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.0 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : −VSD (V) 0.01 0.1 1 10 R E V E R S E D R A IN C U R R E N T : − I D R ( A ) Ta= −25°C Ta=25°C Ta=75°C Ta=125°C VGS=0V Pulsed Fig.6 Reverse Drain Current Source-Drain Current 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : −VDS (V) C A P A C IT A N C E : C ( p F ) 10000 100 1000 Ta=25°C f=1MHz VGS=0V Fig.7 Typical Capacitance vs. Drain-Source Voltage Ciss Coss Crss 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) 1 10 S W IT C H IN G T IM E : t ( n s ) 1000 10000 100 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed Fig.8 Switching Characteristics td (off) td (on) tr tf 0 5 10 15 20 25 30 35 TOTAL GATE CHARGE : Qg (nC) 0 1 2 3 4 5 6 7 8 G A T E -S O U R C E V O L T A G E : − V G S ( V ) Fig.9 Dynamic Input Characteristics Ta=25°C VDD= −15V ID= −7.5A RG=10Ω Pulsed

Page 5

RSS075P03 Transistors Rev.A 4/4 Measurement circuits Fig.10 Switching Time Test Circuit VGS RG VDS D.U.T. ID RL VDD Fig.11 Switching Time Waveforms 90% 10% 10% 90% 90% 10%VGS VDS ton toff trtd(on) trtd(off) Fig.12 Gate Charge Test Circuit VGS IG (Const.) RG VDS D.U.T. ID RL VDD Fig.13 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd

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December 22, 2020

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December 18, 2020

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December 12, 2020

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December 1, 2020

Fantastic Quality Control and Great Selection. Heisener Electronics has became to my No.1 Supplier for many years.

Eri*****Mehra

November 28, 2020

I was glad to find this product being sold at a great price. They were the perfect replacement.

Kea***** Pope

November 27, 2020

Went well this time Now have the IC and very pleased.

Sari*****French

November 23, 2020

I can count on your provision for BOM of my design in near future

Addi*****Guha

November 22, 2020

Perfectly functioning!! on time and as described!

RSS075P03FU6TB Guarantees

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We provide 90 days warranty.

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