Part Number | SBL845 |
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Manufacturer | Diodes Incorporated |
Description | DIODE SCHOTTKY 45V 8A TO220AC |
Datasheet | SBL845 Datasheet |
Package | TO-220-2 |
In Stock | 459 piece(s) |
Unit Price | Request a Quote |
Lead Time | Can Ship Immediately |
Estimated Delivery Time | Jan 28 - Feb 2 (Choose Expedited Shipping) |
Request for Quotation |
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Part Number # SBL845 (Diodes - Rectifiers - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
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Manufacturer | Diodes Incorporated |
Category | Discrete Semiconductor Products - Diodes - Rectifiers - Single |
Datasheet | SBL845Datasheet |
Package | TO-220-2 |
Series | - |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 45V |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 550mV @ 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 500µA @ 45V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220AC |
Operating Temperature - Junction | -65°C ~ 150°C |
DS23044 Rev. 5 - 3 1 of 3 www.diodes.com SBL830-SBL860 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN SBL830 - SBL860 8.0A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring for Transient Protection • Low Power Loss, High Efficiency • High Current Capability, Low VF • High Surge Capability • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications • Lead Free Finish, RoHS Compliant (Note 3) Mechanical Data • Case: TO-220AC • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Polarity: See Diagram • Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 • Marking: Type Number • Weight: 2.3 grams (approximate) L M A N P D E K C B J G R Pin 1 + Pin 1 Pin 2 Pin 2 - Case + TO-220AC Dim Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 J 0.69 0.93 K 3.54 3.78 L 4.07 4.82 M 1.15 1.39 N 0.30 0.50 P 2.04 2.79 R 4.83 5.33 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol SBL 830 SBL 835 SBL 840 SBL 845 SBL 850 SBL 860 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current (Note 1) @ TC = 95°C IO 8 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 200 A Forward Voltage @ IF = 8A, TC = 25°C VFM 0.55 0.70 V Peak Reverse Current @ TC = 25°C at Rated DC Blocking Voltage @ TC = 100°C IRM 0.5 50 mA Typical Junction Capacitance (Note 2) Cj 700 pF Typical Thermal Resistance Junction to Case (Note 1) RθJC 6.9 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
DS23044 Rev. 5 - 3 2 of 3 www.diodes.com SBL830-SBL860 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN 0 4 8 2 0 50 100 150 I , A V E R A G E F O R W A R D C U R R E N T ( A ) (A V ) T , CASE TEMPERATURE ( C) Fig. 1 Fwd Current Derating Curve C ° 6 10 0.1 1.0 10 100 0.2 0.4 I , I N S TA N TA N E O U S F O R W A R D C U R R E N T ( A ) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F SBL830 - SBL845 SBL850 - SBL860 0.6 0.8 50 100 150 0 200 250 300 1 10 100 I , P E A K F O R W A R D S U R G E C U R R E N T ( A ) F S M NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 8.3 ms single half-sine-wave 100 1000 4000 0.1 1.0 10 100 C , C A P A C IT A N C E ( p F ) j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 Cj ° 0.01 0.1 1.0 10 100 0 40 80 120 I , I N S TA N TA N E O U S R E V E R S E C U R R E N T ( m A ) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics
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