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SFW9Z34TM

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SFW9Z34TM

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Part Number SFW9Z34TM
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 60V 18A D2PAK
Datasheet SFW9Z34TM Datasheet
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock 140,214 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Nov 2 - Nov 7 (Choose Expedited Shipping)
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Part Number # SFW9Z34TM (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For SFW9Z34TM specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SFW9Z34TM with quantity into BOM. Heisener.com does NOT require any registration to request a quote of SFW9Z34TM.

SFW9Z34TM Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SFW9Z34TMDatasheet
PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1155pF @ 25V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 82W (Tc)
Rds On (Max) @ Id, Vgs140 mOhm @ 9A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263AB)
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SFW9Z34TM Datasheet

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SFW/I9Z34 BVDSS = -60 V RDS(on) = 0.14 ID = -18 A -60 -18 -12.6 -72 ±30 555 -18 8.2 -5.5 3.8 82 0.55 - 55 to +175 300 1.83 40 62.5 -- -- -- Ω! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! 175 o C Operating Temperature ! Lower Leakage Current : 10 µ A (Max.) @ VDS = -60V ! Low RDS(ON) : 0.106 Ω (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Junction-to-Ambient Junction-to-Ambient Rθ JC Rθ JA Rθ JA o C/W Characteristic Max. UnitsSymbol Typ. FEATURES D2-PAK 1. Gate 2. Drain 3. Source 1 3 2 1 2 3 I2-PAK * * When mounted on the minimum pad size recommended (PCB Mount). Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (TC=25 o C) Continuous Drain Current (TC=100 o C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 o C) Total Power Dissipation (TC=25 o C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Value UnitsSymbol IDM VGS EAS IAR EAR dv/dt PD ID TJ , TSTG TL A V mJ A mJ V/ns W W W/ o C A o C VDSS V * O1 O2 O3 O1 O1 Rev. C

Page 3

SFW/I9Z34 -60 -- -2.0 -- -- -- -- -- -0.05 -- -- -- -- -- 265 84 14 24 43 28 30 5.3 12 -- -- -4.0 -100 100 -10 -100 0.14 -- 1155 400 125 40 60 95 65 38 -- -- 8.8 890 -- -- -- 85 0.25 -18 -72 -3.9 -- -- Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=2.0mH, IAS=-18A, VDD=-25V, RG=27Ω *, Starting TJ =25 oC ISD -18A, di/dt 300A/µ s, VDD BVDSS , Starting TJ =25 oC Pulse Test : Pulse Width = 250µ s, Duty Cycle 2% Essentially Independent of Operating Temperature _< O1 O2 O3 O4 O5 _<_< _< P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 oC unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max. UnitsTyp.Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS ∆ BV/∆ TJ VGS(th) RDS(on) IGSS IDSS V V/ o C V nA µ A Ω pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- VGS=0V,ID=-250µ A ID=-250µ A See Fig 7 VDS=-5V,ID=-250µ A VGS=-20V VGS=20V VDS=-60V VDS=-48V,TC=150 o C VGS=-10V,ID=-9A VDS=-30V,ID=-9A VDD=-30V,ID=-18A, RG=12 See Fig 13 VDS=-48V,VGS=-10V, ID=-18A See Fig 6 & Fig 12 Drain-to-Source Leakage Current VGS=0V,VDS=-25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr CharacteristicSymbol Max. UnitsTyp.Min. Test Condition -- -- -- -- -- A V ns µ C Integral reverse pn-diode in the MOSFET TJ=25 o C,IS=-18A,VGS=0V TJ=25 o C,IF=-18A diF/dt=100A/µ s O4 O5 O4 O4 Ω O4 O4 O1 O5O4 S

Page 4

SFW/I9Z34 0 10 20 30 40 50 60 70 0.0 0.1 0.2 0.3 0.4 @ Note : T J = 25 o CVGS = -20 V V GS = -10 V R D S ( o n ) , [ Ω ] D r a i n - S o u r c e O n - R e s i s t a n c e -I D , Drain Current [A] 10-1 100 101 100 101 @ Notes : 1. 250 µ s Pulse Test 2. T C = 25 oC VGS Top : - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V - I D , D r a i n C u r r e n t [ A ] -V DS , Drain-Source Voltage [V] 2 4 6 8 10 10-1 100 101 25 oC 175 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = -30 V 3. 250 µ s Pulse Test - I D , D r a i n C u r r e n t [ A ] -V GS , Gate-Source Voltage [V] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 -1 10 0 10 1 175 o C 25 o C @ Notes : 1. V GS = 0 V 2. 250 µ s Pulse Test-I D R , R e v e r s e D r a i n C u r r e n t [ A ] -V SD , Source-Drain Voltage [V] 10 0 10 1 0 300 600 900 1200 1500 C iss = C gs + C gd ( C ds = shorted ) C oss = C ds + C gd C rss = C gd @ Notes : 1. V GS = 0 V 2. f = 1 MHzC rss C oss C iss C a p a c i t a n c e [ p F ] -V DS , Drain-Source Voltage [V] 0 5 10 15 20 25 30 35 0 5 10 V DS = -48 V V DS = -30 V V DS = -12 V @ Notes : I D =-18 A - V G S , G a t e - S o u r c e V o l t a g e [ V ] Q G , Total Gate Charge [nC] P-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

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SFW/I9Z34 -75 -50 -25 0 25 50 75 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 @ Notes : 1. V GS = -10 V 2. I D = -9.0 A R D S ( o n ) , ( N o r m a l i z e d ) D r a i n - S o u r c e O n - R e s i s t a n c e T J , Junction Temperature [ o C] 100 101 102 10-1 100 101 102 10 ms DC 1 ms 0.1 ms @ Notes : 1. T C = 25 oC 2. T J = 175 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) - I D , D r a i n C u r r e n t [ A ] -V DS , Drain-Source Voltage [V] -75 -50 -25 0 25 50 75 100 125 150 175 200 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. V GS = 0 V 2. I D = -250 µ A - B V D S S , ( N o r m a l i z e d ) D r a i n - S o u r c e B r e a k d o w n V o l t a g e T J , Junction Temperature [ o C] 25 50 75 100 125 150 175 0 4 8 12 16 20 - I D , D r a i n C u r r e n t [ A ] T c , Case Temperature [ o C] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Z θ JC (t)=1.83 oC/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM -T C =P DM *Z θ JC (t) Z θJ C( t ) , T h e r m a l R e s p o n s e t 1 , Square Wave Pulse Duration [sec] P-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area P DM. t 1. t 2.

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SFW/I9Z34P-CHANNELPOWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2---- 2 1 -------------------- BVDSS -- VDD BVDSS Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS -10V Qg Qgs Qgd Vary tp to obtain required peak ID -10V VDDC LL VDS ID RG t p DUT BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) -10V Vout Vin RL DUT RG -3mA VGS Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT VDS 300nF 50K 200nF12V Same Type as DUT “ Current Regulator ” R1 R2 Ω

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SFW/I9Z34 P-CHANNELPOWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + -- L I S DriverVGS RG Compliment of DUT (N-Channel) VGS • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDDBody Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period --------------------------

SFW9Z34TM Reviews

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Miya*****lson

August 19, 2020

This was a useful assortment of product that filled in a parts gap that I had on my electronic workbench. Thank you.

Raph*****Sutton

August 15, 2020

Very user friendly to find part and specs. Easy to deal with the transaction for different payment types. Thanks!

Nala*****garwal

August 15, 2020

This was a perfect replacement for the original mode. 5 minutes and it was up and running like new.

Feli***** Gara

August 9, 2020

Very good connector, easy to realise and with Low price

Frida *****rishnan

August 2, 2020

I wish I had come across Heisener first, no one could help me for 2 days. You are now saved into the TOP of my favorites web list. Thank you very much.

Elli*****Mangal

August 1, 2020

Excellent sales and service. Thank you. Buy with confidence.

SFW9Z34TM Guarantees

Service Guarantee

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We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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