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SI1012X-T1-E3

hotSI1012X-T1-E3

SI1012X-T1-E3

For Reference Only

Part Number SI1012X-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 20V 500MA SC89-3
Datasheet SI1012X-T1-E3 Datasheet
Package SC-89, SOT-490
In Stock 155,098 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 2 - Dec 7 (Choose Expedited Shipping)
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Part Number # SI1012X-T1-E3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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SI1012X-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI1012X-T1-E3Datasheet
PackageSC-89, SOT-490
SeriesTrenchFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Vgs (Max)��6V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Rds On (Max) @ Id, Vgs700 mOhm @ 600mA, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-3
Package / CaseSC-89, SOT-490

SI1012X-T1-E3 Datasheet

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Vishay Siliconix Si1012R, Si1012X Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com N-Channel 1.8 V (G-S) MOSFET FEATURES • TrenchFET® Power MOSFET: 1.8 V Rated • Gate-Source ESD Protected: 2000 V • High-Side Switching • Low On-Resistance: 0.7  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 20 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 Top View 2 1 S D G 3 SC-75A or SC-89 Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. ORDERING INFORMATION Part Number Package Marking Code Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-75A (SOT-416) C Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-89 (SOT-490) A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C) b TA = 25 °C ID 600 500 mA TA = 85 °C 400 350 Pulsed Drain Currenta IDM 1000 Continuous Source Current (Diode Conduction)b IS 275 250 Maximum Power Dissipationb for SC-75 TA = 25 °C PD 175 150 mW TA = 85 °C 90 80 Maximum Power Dissipationb for SC-89 TA = 25 °C 275 250 TA = 85 °C 160 140 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

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Vishay Siliconix Si1012R, Si1012X www.vishay.com 2 Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.45 0.9 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 0.5 ± 1 µA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 0.3 100 nA VDS = 20 V, VGS = 0 V, TJ = 85 °C 5 µA On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 700 mA Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 600 mA 0.41 0.70 VGS = 2.5 V, ID = 500 mA 0.53 0.85 VGS = 1.8 V, ID = 350 mA 0.70 1.25 Forward Transconductancea gfs VDS = 10 V, ID = 400 mA 1 S Diode Forward Voltagea VSD IS = 150 mA, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 250 mA 750 pCGate-Source Charge Qgs 75 Gate-Drain Charge Qgd 225 Turn-On Delay Time td(on) VDD = 10 V, RL = 47  ID  200 mA, VGEN = 4.5 V, Rg = 10  5 ns Rise Time tr 5 Turn-Off Delay Time td(off) 25 Fall Time tf 11

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Vishay Siliconix Si1012R, Si1012X Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 V thru 1.8 V VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D 1 V - O n -R e s is ta n c e ( Ω ) R D S (o n ) 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 ID - Drain Current (mA) VGS = 1.8 V VGS = 4.5 V VGS = 2.5 V 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 VDS = 10 V ID = 250 mA - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) V G S Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 125 °C 25 °C VGS - Gate-to-Source Voltage (V) I D - D ra in C u rr e n t (m A ) TC = - 55 °C 0 20 40 60 80 100 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss C - C a p a c it a n c e ( p F ) R D S (o n ) - O n -R e s is ta n c e (N o rm a liz e d ) 0.60 0.80 1.00 1.20 1.40 1.60 - 50 - 25 0 25 50 75 100 125 VGS = 4.5 V ID = 600 mA TJ - Junction Temperature (°C) VGS = 1.8 V ID = 350 mA

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Vishay Siliconix Si1012R, Si1012X www.vishay.com 4 Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage Variance vs. Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 1 VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (m A ) I S TJ = 125 °C TJ = 25 °C 10 100 TJ = - 55 °C - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 ID = 0.25 mA V a ri a n c e ( V ) V G S (t h ) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage IGSS vs. Temperature 0 1 2 3 4 5 0 1 2 3 4 5 6 ID = 350 mA - O n -R e s is ta n c e ( Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V) ID = 200 mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) I G S S - ( µ A ) VGS = 4.5 V BVGSS vs. Temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) B V G S S - G a te -t o -S o u rc e B re a k d o w n V o lt a g e ( V )

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Vishay Siliconix Si1012R, Si1012X Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71166. Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 10- 3 10- 2 00601110- 110- 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 833 ° C/W 3. TJM - TA = PDMZthJA (t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10- 3 10- 2 01110- 110- 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e

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Package Information www.vishay.com Vishay Siliconix C15-1445-Rev. F, 23-Nov-15 1 Document Number: 71348 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SC-75A: 3 Leads DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip.  CM BA – 2X 1 2 3 A 1 2 D C bbb 4 B3 D 3 D D Dbbb D bbb D e2 B1(b1) 3 e1 2XB1 E1 2X e3 2 E E/2 D bbb 4X D Seating Plane AA 2 A 1 Base Metal With Tin Planting Section B-B 5 B1 b1 Cc1 L2 L L 1 BB 2X 1 ddd C C 11 DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd 0.10 DIM. MILLIMETERS NOTE MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 A2 0.65 0.70 0.80 B1 0.19 - 0.24 5 b1 0.17 - 0.21 c 0.13 - 0.15 5 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 1, 2 e1 0.50 BSC e2 1.00 BSC e3 0.50 BSC L 0.15 0.205 0.30 L1 0.40 ref. L2 0.15 BSC q 0° - 8° q1 4° - 10°

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Application Note 826 Vishay Siliconix Document Number: 72603 www.vishay.com Revision: 21-Jan-08 19 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 (0.356) 0 .0 7 1 (1 .8 0 3 ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.264 (0.660) 0.054 (1.372) 0 .0 3 1 (0 .7 9 8 ) 0 .0 2 0 (0 .5 0 3 ) Return to Index Return to Index

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