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Part Number | SI1012X-T1-GE3 |
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Manufacturer | Vishay Siliconix |
Description | MOSFET N-CH 20V 500MA SC89-3 |
Datasheet | |
Package | SC-89, SOT-490 |
In Stock | 256,702 piece(s) |
Unit Price | $ 0.1307 * |
Lead Time | Can Ship Immediately |
Estimated Delivery Time | Mar 7 - Mar 12 (Choose Expedited Shipping) |
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Part Number # SI1012X-T1-GE3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
For SI1012X-T1-GE3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SI1012X-T1-GE3 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of SI1012X-T1-GE3.
Manufacturer | Vishay Siliconix |
Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
Package | SC-89, SOT-490 |
Series | TrenchFET? |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±6V |
FET Feature | - |
Power Dissipation (Max) | 250mW (Ta) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 600mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-3 |
Package / Case | SC-89, SOT-490 |
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