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SI1026X-T1-GE3

hot SI1026X-T1-GE3

SI1026X-T1-GE3

For Reference Only

Part Number SI1026X-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 60V 0.305A SC89-6
Datasheet SI1026X-T1-GE3 Datasheet
Package SOT-563, SOT-666
In Stock 189960 piece(s)
Unit Price $ 0.1507 *
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SI1026X-T1-GE3

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SI1026X-T1-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet SI1026X-T1-GE3 Datasheet
PackageSOT-563, SOT-666
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25��C305mA
Rds On (Max) @ Id, Vgs1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds30pF @ 25V
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89-6

SI1026X-T1-GE3 Datasheet

Page 1

Page 2

Vishay Siliconix Si1026X Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 1 N-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 30 pF • Fast Switching Speed: 15 ns (typ.) • Low Input and Output Leakage • ESD Protected: 2000 V • Miniature Package • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Voltage Operation • High-Speed Circuits • Low Error Voltage • Small Board Area APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays PRODUCT SUMMARY VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 Marking Code: E Top View 3 1 D2 G2 S1 52 4 6 D1 S2 G1 SC-89 Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 320 305 mA TA = 85 °C 230 220 Pulsed Drain Currentb IDM - 650 Continuous Source Current (Diode Conduction)a IS 450 380 Maximum Power Dissipationa TA = 25 °C PD 280 250 mW TA = 85 °C 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

Page 3

www.vishay.com 2 Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 Vishay Siliconix Si1026X Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 1 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 5 V ± 50 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) VDS = 10 V, VGS = 4.5 V 500 mA VDS = 7.5 V, VGS = 10 V 800 Drain-Source On-Resistancea RDS(on) VGS = 4.5 V, ID = 200 mA 3.0 VGS = 10 V, ID = 500 mA 1.40 VGS = 10 V, ID = 500 mA, TJ = 125 °C 2.50 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 200 mS Diode Forward Voltagea VSD VGS = 0 V, IS = 200 mA 1.40 V Dynamicb Total Gate Charge Qg VDS = 10 V, ID = 250 mA, VGS = 4.5 V 600 pCGate-Source Charge Qgs 120 Gate-Drain Charge Qgd 225 Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 30 pFOutput Capacitance Coss 6 Reverse Transfer Capacitance Crss 3 Switchingb, c Turn-On Time t(on) VDD = 30 V, RL = 150  ID = 200 mA, VGEN = 10 V, Rg = 10  15 ns Turn-Off Time t(off) 20

Page 4

Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 3 Vishay Siliconix Si1026X TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D VGS = 10 V thru 7 V 3 V 5 V 4 V 6 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 ID - Drain Current (mA) VGS = 4.5 V VGS = 10 V - O n -R e s is ta n c e ( Ω ) R D S (o n ) 0 1 2 3 4 5 6 7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VDS = 10 V ID = 250 mA - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) V G S Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 300 600 900 1200 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (m A ) I D TJ = - 55 °C 125 °C 25 °C 0 10 20 30 40 50 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e ( p F ) Crss Coss Ciss VGS = 0 V f = 1 MHz 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 10 V at 500 mA VGS = 4.5 V at 200 mA (N o rm a liz e d ) - O n -R e s is ta n c e R D S (o n )

Page 5

www.vishay.com 4 Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 Vishay Siliconix Si1026X TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71434. Source-Drain Diode Forward Voltage 1.2 1.5 1 100 1000 0 0.3 0.6 0.9 TJ = 25 °C TJ = 125 °C VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S 10 TJ = - 55 °C VGS = 0 V On-Resistance vs. Gate-to-Source Voltage 0 1 2 3 4 5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA - O n -R e s is ta n c e ( Ω ) R D S (o n ) Threshold Voltage Variance Over Temperature V a ri a n c e ( V ) V G S (t h ) - 0.8 - 0.6 - 0.4 - 0.2 - 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Junction Temperature (°C) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 00601110-110-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM

Page 6

Package Information www.vishay.com Vishay Siliconix Revision: 11-Aug-14 1 Document Number: 71612 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SC-89 6-Leads (SOT-563F) Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 6 4 32 4 32 5 4 Caaa CMddd A–B D 2x e B 6x b Caaa 2x D E/2 E Cbbb 2x1 2 3 6 5 4 E1 E 1 /2 A D e1 L1 L A B C A1 A1 SECTION B-B DETAIL “A” SEE DETAIL “A” DIM. MILLIMETERS MIN. NOM. MAX. A 0.56 0.58 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 c 0.10 0.14 0.18 D 1.50 1.60 1.70 E 1.50 1.60 1.70 E1 1.15 1.20 1.25 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880

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Application Note 826 Vishay Siliconix Document Number: 72605 www.vishay.com Revision: 21-Jan-08 21 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) 0 .0 6 9 (1 .7 5 3 ) 0 .0 1 9 (0 .4 7 8 ) 0 .0 3 1 (0 .7 9 8 ) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index

SI1026X-T1-GE3 Reviews

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February 24, 2020

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