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SI1403CDL-T1-GE3

hot SI1403CDL-T1-GE3

SI1403CDL-T1-GE3

For Reference Only

Part Number SI1403CDL-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 20V 2.1A SC-70-6
Datasheet SI1403CDL-T1-GE3 Datasheet
Package 6-TSSOP, SC-88, SOT-363
In Stock 72402
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 26 - Jul 31 (Choose Expedited Shipping)

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SI1403CDL-T1-GE3

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SI1403CDL-T1-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI1403CDL-T1-GE3 Datasheet
Package6-TSSOP, SC-88, SOT-363
SeriesTrenchFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds281pF @ 10V
Power Dissipation (Max)600mW (Ta), 900mW (Tc)
Rds On (Max) @ Id, Vgs140 mOhm @ 1.6A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

SI1403CDL-T1-GE3 Datasheet

SI1403CDL-T1-GE3 Related Products

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hotSI1403CDL-T1-GE3 SI1402DH-T1-GE3 Vishay Siliconix, MOSFET N-CH 30V 2.7A SOT363, 6-TSSOP, SC-88, SOT-363, TrenchFET?
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hotSI1403CDL-T1-GE3 SI3454ADV-T1-E3 Vishay Siliconix, MOSFET N-CH 30V 3.4A 6-TSOP, Package:SOT-23-6 Thin, TSOT-23-6, Series:TrenchFET? , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):20V, Current - Continuous Drain (Id) @ 25°C:2.1A (Tc), Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V, Vgs(th) (Max) @ Id:1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V, Vgs (Max):±12V, Input Capacitance (Ciss) (Max) @ Vds:281pF @ 10V, Power Dissipation (Max):600mW (Ta), 900mW (Tc), Rds On (Max) @ Id, Vgs:140 mOhm @ 1.6A, 4.5V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:SC-70-6 (SOT-363), Package / Case:6-TSSOP, SC-88, SOT-363
hotSI1403CDL-T1-GE3 IRL510STRL Vishay Siliconix, MOSFET N-CH 100V 5.6A D2PAK, Package:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Series:TrenchFET? , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):20V, Current - Continuous Drain (Id) @ 25°C:2.1A (Tc), Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V, Vgs(th) (Max) @ Id:1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V, Vgs (Max):±12V, Input Capacitance (Ciss) (Max) @ Vds:281pF @ 10V, Power Dissipation (Max):600mW (Ta), 900mW (Tc), Rds On (Max) @ Id, Vgs:140 mOhm @ 1.6A, 4.5V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:SC-70-6 (SOT-363), Package / Case:6-TSSOP, SC-88, SOT-363
hotSI1403CDL-T1-GE3 SI1404BDH-T1-E3 Vishay Siliconix, MOSFET N-CH 30V 1.9A SOT363, Package:6-TSSOP, SC-88, SOT-363, Series:TrenchFET? , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):20V, Current - Continuous Drain (Id) @ 25°C:2.1A (Tc), Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V, Vgs(th) (Max) @ Id:1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V, Vgs (Max):±12V, Input Capacitance (Ciss) (Max) @ Vds:281pF @ 10V, Power Dissipation (Max):600mW (Ta), 900mW (Tc), Rds On (Max) @ Id, Vgs:140 mOhm @ 1.6A, 4.5V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:SC-70-6 (SOT-363), Package / Case:6-TSSOP, SC-88, SOT-363
hotSI1403CDL-T1-GE3 SI1404BDH-T1-GE3 Vishay Siliconix, MOSFET N-CH 30V 1.9A SOT363, Package:6-TSSOP, SC-88, SOT-363, Series:TrenchFET? , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):20V, Current - Continuous Drain (Id) @ 25°C:2.1A (Tc), Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V, Vgs(th) (Max) @ Id:1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V, Vgs (Max):±12V, Input Capacitance (Ciss) (Max) @ Vds:281pF @ 10V, Power Dissipation (Max):600mW (Ta), 900mW (Tc), Rds On (Max) @ Id, Vgs:140 mOhm @ 1.6A, 4.5V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:SC-70-6 (SOT-363), Package / Case:6-TSSOP, SC-88, SOT-363
hotSI1403CDL-T1-GE3 SI1401EDH-T1-GE3 Vishay Siliconix, MOSFET P-CH 12V 4A SC-70-6, Package:6-TSSOP, SC-88, SOT-363, Series:TrenchFET? , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):20V, Current - Continuous Drain (Id) @ 25°C:2.1A (Tc), Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V, Vgs(th) (Max) @ Id:1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V, Vgs (Max):±12V, Input Capacitance (Ciss) (Max) @ Vds:281pF @ 10V, Power Dissipation (Max):600mW (Ta), 900mW (Tc), Rds On (Max) @ Id, Vgs:140 mOhm @ 1.6A, 4.5V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:SC-70-6 (SOT-363), Package / Case:6-TSSOP, SC-88, SOT-363
hotSI1403CDL-T1-GE3 SI1400DL-T1-GE3 Vishay Siliconix, MOSFET N-CH 20V 1.6A SC-70-6, Package:6-TSSOP, SC-88, SOT-363, Series:TrenchFET? , FET Type:P-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):20V, Current - Continuous Drain (Id) @ 25°C:2.1A (Tc), Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V, Vgs(th) (Max) @ Id:1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V, Vgs (Max):±12V, Input Capacitance (Ciss) (Max) @ Vds:281pF @ 10V, Power Dissipation (Max):600mW (Ta), 900mW (Tc), Rds On (Max) @ Id, Vgs:140 mOhm @ 1.6A, 4.5V, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:SC-70-6 (SOT-363), Package / Case:6-TSSOP, SC-88, SOT-363

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