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SI1539CDL-T1-GE3

hot SI1539CDL-T1-GE3

SI1539CDL-T1-GE3

For Reference Only

Part Number SI1539CDL-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N/P-CH 30V SOT363
Datasheet SI1539CDL-T1-GE3 Datasheet
Package 6-TSSOP, SC-88, SOT-363
In Stock 103554 piece(s)
Unit Price $ 0.1271 *
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SI1539CDL-T1-GE3

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SI1539CDL-T1-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet SI1539CDL-T1-GE3 Datasheet
Package6-TSSOP, SC-88, SOT-363
SeriesTrenchFET?
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25��C700mA, 500mA
Rds On (Max) @ Id, Vgs388 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds28pF @ 15V
Power - Max340mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

SI1539CDL-T1-GE3 Datasheet

Page 1

Page 2

Vishay Siliconix Si1539CDL Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 www.vishay.com 1 N- and P-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • DC/DC Converter • Load Switch PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) N-Channel 30 0.388 at VGS = 10 V 0.7 0.55 0.525 at VGS = 4.5 V 0.6 P-Channel - 30 0.890 at VGS = - 10 V - 0.5 0.8 1.7 at VGS = - 4.5 V - 0.3 SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 Marking Code RG XX Lot Traceability and Date Code Part # Code Y Y Ordering Information: Si1539CDL-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET D 1 G 1 S 1 S2 G2 D2 P-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 0.7 - 0.5 A TC = 70 °C 0.6 - 0.4 TA = 25 °C 0.7b, c - 0.4b, c TA = 70 °C 0.5b, c - 0.4b, c Source-Drain Current Diode Current TC = 25 °C IS 0.3 - 0.3 TA = 25 °C 0.2b, c - 0.2b, c Pulsed Drain Current IDM 2 - 1 Maximum Power Dissipation TC = 25 °C PD 0.34 0.34 W TC = 70 °C 0.22 0.22 TA = 25 °C 0.29b, c 0.29b, c TA = 70 °C 0.18b, c 0.18b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t  10 s RthJA 365 438 365 438 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 308 370 308 370

Page 3

www.vishay.com 2 Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 Vishay Siliconix Si1539CDL SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 30 V VGS = 0 V, ID = - 250 µA P-Ch - 30 VDS Temperature Coefficient VDS/TJ ID = 250 µA N-Ch 30 mV/°C ID = - 250 µA P-Ch - 18 VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA N-Ch - 3.6 ID = - 250 µA P-Ch 3.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1.2 2.5 V VDS = VGS, ID = - 250 µA P-Ch - 1.2 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch ± 100 nA P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V N-Ch 1 µA VDS = - 30 V, VGS = 0 V P-Ch - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V N-Ch 2 A VDS = -5 V, VGS = - 10 V P-Ch - 1 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 0.6 A N-Ch 0.323 0.388  VGS = - 10 V, ID = - 0.4 A P-Ch 0.740 0.890 VGS = 4.5 V, ID = 0.1A N-Ch 0.437 0.525 VGS = - 4.5 V, ID = - 0.1 A P-Ch 1.4 1.7 Forward Transconductanceb gfs VDS = 15 V, ID = 0.6 A N-Ch 1.2 S VDS = - 15 V, ID = - 0.4 A P-Ch 0.6 Dynamica Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz N-Ch 28 pF P-Ch 34 Output Capacitance Coss N-Ch 10 P-Ch 12 Reverse Transfer Capacitance Crss N-Ch 5 P-Ch 7 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 0.6 A N-Ch 1 1.5 nC VDS = - 15 V, VGS = - 10 V, ID = - 0.4 A P-Ch 1.5 3 N-Channel VDS = 15 V, VGS = 4.5 V ID = 0.6 A P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 0.4 A N-Ch 0.55 1.1 P-Ch 0.8 1.2 Gate-Source Charge Qgs N-Ch 0.2 P-Ch 0.4 Gate-Drain Charge Qgd N-Ch 0.2 P-Ch 0.35 Gate Resistance Rg f = 1 MHz N-Ch 0.7 3.7 7.4  P-Ch 1.7 8.3 16.6

Page 4

Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 www.vishay.com 3 Vishay Siliconix Si1539CDL Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Turn-On Delay Time td(on) N-Channel VDD = 15 V, RL = 30  ID  0.5 A, VGEN = 10 V, Rg = 1  P-Channel VDD = - 15 V, RL = 38  ID  - 0.4 A, VGEN = - 10 V, Rg = 1  N-Ch 2 4 ns P-Ch 1 2 Rise Time tr N-Ch 14 21 P-Ch 9 18 Turn-Off Delay Time td(off) N-Ch 11 20 P-Ch 8 16 Fall Time tf N-Ch 9 18 P-Ch 8 16 Turn-On Delay Time td(on) N-Channel VDD = 15 V, RL = 30  ID  0.5 A, VGEN = 4.5 V, Rg = 1  P-Channel VDD = - 15 V, RL = 38  ID  - 0.4 A, VGEN = - 4.5 V, Rg = 1  N-Ch 26 39 P-Ch 32 48 Rise Time tr N-Ch 25 38 P-Ch 19 29 Turn-Off Delay Time td(off) N-Ch 14 21 P-Ch 4 8 Fall Time tf N-Ch 15 23 P-Ch 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C N-Ch 0.3 A P-Ch - 0.3 Pulse Diode Forward Currenta ISM N-Ch 2 P-Ch - 1 Body Diode Voltage VSD IS = 0.5 A N-Ch 0.8 1.2 V IS = - 0.4 A P-Ch - 0.8 - 1.2 Body Diode Reverse Recovery Time trr N-Channel IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 0.5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 10 20 ns P-Ch 16 24 Body Diode Reverse Recovery Charge Qrr N-Ch 3 6 nC P-Ch 8 16 Reverse Recovery Fall Time ta N-Ch 6 ns P-Ch 9 Reverse Recovery Rise Time tb N-Ch 4 P-Ch 7

Page 5

www.vishay.com 4 Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 Vishay Siliconix Si1539CDL N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 0.5 1 1.5 2 0 0.5 1 1.5 2 I D - D ra in C u rr e n t (A ) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V VGS = 3 V VGS = 4 V 0.00 0.20 0.40 0.60 0.80 0 0.5 1 1.5 2 R D S (o n ) - O n -R e s is ta n c e ( Ω ) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 V G S - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V VDS = 7.5 V ID = 0.6 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 I D - D ra in C u rr e n t (A ) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 10 20 30 40 0 6 12 18 24 30 C - C a p a c it a n c e ( p F ) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 R D S (o n ) - O n -R e s is ta n c e (N o rm a li z e d ) TJ - Junction Temperature (°C) ID = 0.6 A VGS = 10 V VGS = 4.5 V

Page 6

Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 www.vishay.com 5 Vishay Siliconix Si1539CDL N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 I S - S o u rc e C u rr e n t (A ) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 V G S (t h ) (V ) TJ - Temperature (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.2 0.4 0.6 0.8 2 4 6 8 10 R D S (o n ) - O n -R e s is ta n c e ( Ω ) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 0.6 A 0 1.6 3.2 4.8 6.4 0.001 0.01 0.1 1 10 P o w e r (W ) Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 0.1 1 10 100 I D - D ra in C u rr e n t (A ) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s 10 s, DC

Page 7

www.vishay.com 6 Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 Vishay Siliconix Si1539CDL N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 150 I D - D ra in C u rr e n t (A ) TC - Case Temperature (°C) Power Derating, Junction-to-Foot 0 0.09 0.18 0.27 0.36 0.45 0 25 50 75 100 125 150 P o w e r (W ) TC - Case Temperature (°C) Power Derating, Junction-to-Ambient 0 0.08 0.16 0.24 0.32 0 25 50 75 100 125 150 P o w e r (W ) TA - Ambient Temperature (°C)

Page 8

Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 www.vishay.com 7 Vishay Siliconix Si1539CDL N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 N o rm a li z e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 486 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Foot 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 N o rm a li z e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse

Page 9

www.vishay.com 8 Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 Vishay Siliconix Si1539CDL P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 I D - D ra in C u rr e n t (A ) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 6 V VGS = 3 V VGS = 4 V VGS = 5 V 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 R D S (o n ) - O n -R e s is ta n c e ( Ω ) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 V G S - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V ID = 0.4 A VDS = 7.5 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 0.05 0.1 0.15 0.2 0 1 2 3 4 I D - D ra in C u rr e n t (A ) VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = 25 °C TC = - 55 °C 0 11 22 33 44 55 0 6 12 18 24 30 C - C a p a c it a n c e ( p F ) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 R D S (o n ) - O n -R e s is ta n c e (N o rm a li z e d ) TJ - Junction Temperature (°C) VGS = 4.5 V VGS = 10 V

Page 10

Document Number: 67469 S11-0238-Rev. A, 14-Feb-11 www.vishay.com 9 Vishay Siliconix Si1539CDL P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 0.1 0.4 0.7 1.0 1.3 I S - S o u rc e C u rr e n t (A ) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 1.6 1.8 2 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 V G S (t h ) (V ) TJ - Temperature (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.5 1 1.5 2 2.5 3 2 4 6 8 10 R D S (o n ) - O n -R e s is ta n c e ( Ω ) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 0.4 A 0 1.6 3.2 4.8 6.4 0.001 0.01 0.1 1 10 P o w e r (W ) Time (s) Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 0.1 1 10 100 I D - D ra in C u rr e n t (A ) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 1 s 10 s, DC

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Land*****ains

November 12, 2019

Super easy to replace and labelled terminals made it a quick replacement.

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October 26, 2019

They worked as I expected. I'll definitely purchase again. Thank you!

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October 25, 2019

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August 15, 2019

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August 6, 2019

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