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SI2312BDS-T1-GE3

hot SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

For Reference Only

Part Number SI2312BDS-T1-GE3
Heisener # H299-SI2312BDS-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 20V 3.9A SOT23-3
Datasheet SI2312BDS-T1-GE3 Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 233994
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 14 - Dec 19 (Choose Expedited Shipping)

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SI2312BDS-T1-GE3

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SI2312BDS-T1-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI2312BDS-T1-GE3 Datasheet
PackageTO-236-3, SC-59, SOT-23-3
SeriesTrenchFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs(th) (Max) @ Id850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Vgs (Max)±8V
Power Dissipation (Max)750mW (Ta)
Rds On (Max) @ Id, Vgs31 mOhm @ 5A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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