Vishay Siliconix SI2312BDS-T1-GE3
For Reference Only
Part Number: SI2312BDS-T1-GE3
Manufacturer: Vishay Siliconix
Description: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.9A SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Datasheet: SI2312BDS-T1-GE3 Datasheet
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|Technology||MOSFET (Metal Oxide)|
|Drain to Source Voltage (Vdss)||20V|
|Current - Continuous Drain (Id) @ 25��C||3.9A (Ta)|
|Drive Voltage (Max Rds On, Min Rds On)||1.8V, 4.5V|
|Vgs(th) (Max) @ Id||850mV @ 250��A|
|Gate Charge (Qg) (Max) @ Vgs||12nC @ 4.5V|
|Input Capacitance (Ciss) (Max) @ Vds||-|
|Power Dissipation (Max)||750mW (Ta)|
|Rds On (Max) @ Id, Vgs||31 mOhm @ 5A, 4.5V|
|Operating Temperature||-55��C ~ 150��C (TJ)|
|Mounting Type||Surface Mount|
|Supplier Device Package||SOT-23-3 (TO-236)|
|Package / Case||TO-236-3, SC-59, SOT-23-3|
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