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Vishay Siliconix SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

For Reference Only

Part Number: SI2312BDS-T1-GE3

Manufacturer: Vishay Siliconix

Description: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Datasheet: SI2312BDS-T1-GE3 Datasheet

* To learn about the specification of SI2312BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.

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SI2312BDS-T1-GE3 Specifications

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs(th) (Max) @ Id850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)750mW (Ta)
Rds On (Max) @ Id, Vgs31 mOhm @ 5A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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