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SI3475DV-T1-E3

hot SI3475DV-T1-E3

SI3475DV-T1-E3

For Reference Only

Part Number SI3475DV-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 200V 0.95A 6-TSOP
Datasheet SI3475DV-T1-E3 Datasheet
Package SOT-23-6 Thin, TSOT-23-6
In Stock 26050 piece(s)
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SI3475DV-T1-E3

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SI3475DV-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI3475DV-T1-E3 Datasheet
PackageSOT-23-6 Thin, TSOT-23-6
SeriesTrenchFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25��C950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 50V
Vgs (Max)��20V
Power Dissipation (Max)2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs1.61 Ohm @ 900mA, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

SI3475DV-T1-E3 Datasheet

Page 1

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Vishay Siliconix Si3475DV Document Number: 74249 S09-0766-Rev. B, 04-May-09 www.vishay.com 1 P-Channel 200-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) - 200 1.61 at VGS = - 10 V - 0.95 8 nC 1.65 at VGS = - 6 V - 0.93 Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 0.95a A TC = 70 °C - 0.77 TA = 25 °C - 0.75 b,c TA = 70 °C - 0.59 b,c Pulsed Drain Current IDM - 3 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.6 TA = 25 °C 1.6 b,c Avalanche Current L = 0.1 mH IAS 3 Single-Pulse Avalanche Energy EAS 0.45 mJ Maximum Power Dissipation TC = 25 °C PD 3.2 W TC = 70 °C 2.1 TA = 25 °C 2 b,c TA = 70 °C 1.25 b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 51 62.5 °C/W Maximum Junction-to-Foot Steady State RthJF 32 39 Marking Code AI XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free) Si3475DV-T1-GE3 (Lead (Pb)-free and Halogen-free) TSOP-6 Top View 6 4 1 2 3 53 mm 2.85 mm D D D D SG S G D P-Channel MOSFET

Page 3

www.vishay.com 2 Document Number: 74249 S09-0766-Rev. B, 04-May-09 Vishay Siliconix Si3475DV Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 200 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 240 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 6.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2 - 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V - 1 µA VDS = - 200 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 2 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 0.9 A 1.34 1.61 Ω VGS = - 6 V, ID = - 0.7 A 1.37 1.65 Forward Transconductancea gfs VDS = - 10 V, ID = - 0.9 A 3.5 S Dynamicb Input Capacitance Ciss VDS = - 50 V, VGS = 0 V, f = 1 MHz 500 pFOutput Capacitance Coss 26 Reverse Transfer Capacitance Crss 18 Total Gate Charge Qg VDS = - 100 V, VGS = - 10 V, ID = - 1 A 11.7 18 nC VDS = - 100 V, VGS = - 6 V, ID = - 1 A 7.8 12 Gate-Source Charge Qgs 2 Gate-Drain Charge Qgd 3.7 Gate Resistance Rg f = 1 MHz 9 14 Ω Turn-On Delay Time td(on) VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 9 14 ns Rise Time tr 11 18 Turn-Off DelayTime td(off) 28 42 Fall Time tf 12 18 Turn-On Delay Time td(on) VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω 14 21 Rise Time tr 29 44 Turn-Off DelayTime td(off) 23 35 Fall Time tf 14 21 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 0.95 A Pulse Diode Forward Current ISM - 3 Body Diode Voltage VSD IS = - 1 A, VGS = 0 V - 0.81 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C 84 130 ns Body Diode Reverse Recovery Charge Qrr 235 350 nC Reverse Recovery Fall Time ta 46 ns Reverse Recovery Rise Time tb 38

Page 4

Document Number: 74249 S09-0766-Rev. B, 04-May-09 www.vishay.com 3 Vishay Siliconix Si3475DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) ) A( t n err u C ni ar D - I D V = 10 V thru 5 V 4 V GS 1.00 1.20 1.40 1.60 1.80 2.00 0 1 2 3 4 5 VGS = 10 V ID - Drain Current (A) VGS = 6 V R ) n o ( S D (Ω ) e c n a t s i s e R - n O - 0 2 4 6 8 10 0.0 2.5 5.0 7.5 10.0 12.5 ID = 1 A ) V( e g atl o V e cr u o S- ot- et a G - Qg - Total Gate Charge (nC) V G S V DS = 125 V VDS = 75 V VDS = 100 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ) A( t n err u C ni ar D - I D TC = 25 °C Crss 0 150 300 450 600 750 0 4 8 12 16 20 Coss Ciss VDS - Drain-to-Source Voltage (V) ) F p( e c n ati c a p a C - C 0.4 0.8 1.2 1.6 2.0 2.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) R ) n o( S D e c n at si s e R- n O - ) d e zil a mr o N( VGS = 6 V VGS = 10 V ID = 1 A

Page 5

www.vishay.com 4 Document Number: 74249 S09-0766-Rev. B, 04-May-09 Vishay Siliconix Si3475DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 10 1 0.01 VSD - Source-to-Drain Voltage (V) ) A( t n err u C e c r u o S - I S 0 0.3 0.6 0.9 1.2 1.5 0.1 TJ = 150 °C TJ = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 5 µA TJ - Temperature (°C) V ) h t ( S G ) V ( ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 1.2 2.4 3.6 4.8 6.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) R ) n o( S D (Ω ) e cr u o S- ot- ni ar D - TA = 25 °C TA = 125 °C 0 36 60 12 24 ) W( r e w o P Time (s) 48 100.010.001 0.1 1 Safe Operating Area * VGS minimum V GS at which RDS(on) is specified 10 0.001 1 ) A( t n err u C ni ar D - I D 0.01 VDS - Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 1000 Limited by RDS(on)* T = 25 °C Single Pulse 1 s 10 s DC 10 ms 100 ms 1 ms A

Page 6

Vishay Siliconix Si3475DV Document Number: 74249 S09-0766-Rev. B, 04-May-09 www.vishay.com 5 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 0.2 0.4 0.7 0.9 C - Case Temperature (°C) P o w e r (W ) 0 25 50 75 100 125 150 1.1 T Power, Junction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) ) W( r e w o P Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) r (W ) e w o P

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www.vishay.com 6 Document Number: 74249 S09-0766-Rev. B, 04-May-09 Vishay Siliconix Si3475DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74249. Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 1010 -110 -4 100 1 0.1 0.01 Square Wave Pulse Duration (s) t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - T A = P DM Z thJA (t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM 1000 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1 1010-1-4 1 0.1 0.01 Square Wave Pulse Duration (s) t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 10 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5

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