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SI3861BDV-T1-E3

hotSI3861BDV-T1-E3

SI3861BDV-T1-E3

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Part Number SI3861BDV-T1-E3
Manufacturer Vishay Siliconix
Description IC LOAD SWITCH LVL SHIFT 6-TSOP
Datasheet SI3861BDV-T1-E3 Datasheet
Package SOT-23-6 Thin, TSOT-23-6
In Stock 7,660 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # SI3861BDV-T1-E3 (PMIC - Power Distribution Switches, Load Drivers) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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SI3861BDV-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryIntegrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers
Datasheet SI3861BDV-T1-E3Datasheet
PackageSOT-23-6 Thin, TSOT-23-6
Series-
Switch TypeGeneral Purpose
Number of Outputs1
Ratio - Input:Output1:1
Output ConfigurationHigh Side
Output TypeP-Channel
InterfaceOn/Off
Voltage - Load4.5 V ~ 20 V
Voltage - Supply (Vcc/Vdd)-
Current - Output (Max)2.3A
Rds On (Typ)60 mOhm
Input Type-
FeaturesSlew Rate Controlled
Fault Protection-
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

SI3861BDV-T1-E3 Datasheet

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Vishay Siliconix Si3861BDV Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 1 Load Switch with Level-Shift FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 4.5 V Rated • ESD Protected: 3000 V • 105 mΩ Low RDS(on) TrenchFET ® • 4.5 V to 20 V Input • 1.5 V to 8 V Logic Level Control • Low Profile, Small Footprint TSOP-6 Package • 3000 V ESD Protection On Input Switch, VON/OFF • Adjustable Slew-Rate • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS2 (V) RDS(on) (Ω) ID (A) 4.5 to 20 0.075 at VIN = 10 V ± 2.3 0.120 at VIN = 5.0 V ± 1.9 0.145 at VIN = 4.5 V ± 1.7 DESCRIPTION The Si3861BDV includes a P- and N-Channel MOSFET in a single TSOP-6 package. The low on-resistance P-Channel TrenchFET® is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level- shift to drive the P-Channel load-switch. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si3861DV operates on supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A. APPLICATION CIRCUITS VOUT GND LOAD VIN ON/OFF R2 R2 1 2, 3 C1 6 4 6 5 R1 Q1 Q2 Si3861BDV Co Ci Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 R2 (kΩ) ( T im e µ S ) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf td(off) tr td(on) The Si3861BDV is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. Note: * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. COMPONENTS R1 Pull-Up Resistor Typical 10 kΩ to 1 mΩ* R2 Optional Slew-Rate Control Typical 0 to 100 kΩ* C1 Optional Slew-Rate Control Typical 1000 pF

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www.vishay.com 2 Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 Vishay Siliconix Si3861BDV New Product FUNCTIONAL BLOCK DIAGRAM Notes: a. Surface Mounted on FR4 board. b. VIN = 12 V, VON/OFF = 8 V, TA = 25 °C. c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. D2 TSOP-6 Top View 6 4 1 2 3 5 S2 ON/OFF R1, C1 D2 D2 R2 S2 ON/OFF 1 4 6 5 Q1 Q2 Si3861BDV R1, C1 2, 3 Ordering Information: Si3861BDV-T1-E3 (Lead (Pb)-free) Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) R2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Input Voltage VIN 20 V ON/OFF Voltage VON/OFF 8 Load Current Continuousa, b IL ± 2.3 APulsedb, c ± 4 Continuous Intrinsic Diode Conductiona IS - 1 Maximum Power Dissipationa PD 0.83 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω) ESD 3 kV THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (Continuous Current)a RthJA 120 150 °C/W Maximum Junction-to-Foot (Q2) RthJF 60 80 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF Characteristics Reverse Leakage Current IFL VIN = 30 V, VON/OFF = 0 V 1 µA Diode Forward Voltage VSD IS = - 1 A - 0.8 - 1 V ON Characteristics Input Voltage Range VIN 4.5 20 V On-Resistance (P-Channel) at 1 A RDS(on) VON/OFF = 1.5 V, ID = 1 A VIN = 10 V 0.060 0.075 ΩVIN = 5.0 V 0.096 0.120 VIN = 4.5 V 0.115 0.145 On-State (P-Channel) Drain-Current ID(on) VIN-OUT ≤ 0.2 V, VIN = 10 V, VON/OFF = 1.5 V 1 A VIN-OUT ≤ 0.3 V, VIN = 5 V, VON/OFF = 1.5 V 1

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Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 3 Vishay Siliconix Si3861BDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VDROP vs. IL at VIN = 10 V VDROP vs. IL at VIN = 4.5 V VDROP Variance vs. Junction Temperature 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 1 2 3 4 5 6 IL - (A) (V ) V D R O P VON/OFF = 1.5 V to 8 V TJ = 125 C TJ = 25 C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 IL - (A) (V ) V D R O P VON/OFF = 1.5 V to 8 V TJ = 125 °C TJ = 25 °C - 0.04 - 0.02 0.00 0.02 0.04 0.06 0.08 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) V a ri a n c e ( V ) V D R O P IL = 1 A VON/OFF = 1.5 V to 8 V VIN = 10 V VIN = 5 V VDROP vs. IL at VIN = 5 V VDROP vs. VIN at = 1 A On-Resistance vs. Input Voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 3 4 5 6 IL - (A) (V ) V D R O P VON/OFF = 1.5 V to 8 V TJ = 125 °C TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 VIN (V) (V ) V D R O P IL = 1 A VON/OFF = 1.5 V to 8 V TJ = 125 °C TJ = 25 C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 - O n -R e s is ta n c e ( Ω ) R D S (o n ) VIN (V) IL = 1 A VON/OFF = 1.5 V to 8 V TJ = 125 C TJ = 25 °C

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www.vishay.com 4 Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 Vishay Siliconix Si3861BDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized On-Resistance vs. Junction Temperature Switching Variation R2 at VIN = 5 V, R1 = 20 kΩ Switching Variation R2 at VIN = 10 V, R1 = 300 kΩ 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 100 - 50 0 50 100 150 200 TJ - Junction Temperature ( C) IL = 1 A VON/OFF = 1.5 V to 8 V VIN = 10 V VIN = 5 V R D S (o n ) - O n -R e s is ta n c e (N o rm a liz e d ) 0 2 4 6 8 10 0 2 4 6 8 10 12 R2 (kΩ) ( T im e µ s ) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf td(off) tr td(on) 0 50 100 150 200 250 0 20 40 60 80 100 120 R2 (kΩ) ( T im e tr IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf td(on) td(off) µ s ) Switching Variation R2 at VIN = 10 V, R1 = 20 kΩ Switching Variation R2 at VIN = 4.5 V, R1 = 20 kΩ Switching Variation R2 at VIN = 5 V, R1 = 300 kΩ 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 R2 (k ) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF ( T im e µ s ) td(on) tr td(off) tf 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 R2 (kΩ) ( T im e µ s ) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf t d(off) tr td(on) 0 20 40 60 80 100 120 0 20 40 60 80 100 120 R2 (kΩ) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tr td(on) td(off) t f ( T im e µ s )

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Document Number: 73343 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 5 Vishay Siliconix Si3861BDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73343. Switching Variation R2 at VIN = 4.5 V, R1 = 300 kΩ 0 20 40 60 80 100 120 0 20 40 60 80 100 120 R2 (kΩ) ( T im e µ s ) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF td(on) tr tf td(off) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 00601110 -110 -4 100 2 1 0.1 0.01 N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 150 C/W 3. TJM - TA = PDMZthJA (t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Square Wave Pulse Dureation (s)

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