Contact Us
SalesDept@heisener.com 0755-83210559 ext. 805

SI4176DY-T1-E3

hotSI4176DY-T1-E3

SI4176DY-T1-E3

For Reference Only

Part Number SI4176DY-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 30V 12A 8SO
Datasheet SI4176DY-T1-E3 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 334 piece(s)
Unit Price $ 0.2871 *
Lead Time Can Ship Immediately
Estimated Delivery Time Oct 29 - Nov 3 (Choose Expedited Shipping)
Request for Quotation

Part Number # SI4176DY-T1-E3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For SI4176DY-T1-E3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SI4176DY-T1-E3 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of SI4176DY-T1-E3.

SI4176DY-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI4176DY-T1-E3Datasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesTrenchFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds490pF @ 15V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs20 mOhm @ 8.3A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

SI4176DY-T1-E3 Datasheet

Page 1

Page 2

Vishay Siliconix Si4176DY New Product Document Number: 65539 S09-2430-Rev. A, 16-Nov-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Low Current dc-to-dc • Notebook PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 30 0.020 at VGS = 10 V 12a 4.7 nC 0.027 at VGS = 4.5 V 10.4 N-Channel MOSFET G D S D S D D G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4176DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S S Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 12a A TC = 70 °C 9.7 TA = 25 °C 8.3b, c TA = 70 °C 6.6b, c Pulsed Drain Current IDM 40 Continuous Source-Drain Diode Current TC = 25 °C IS 4.2 TA = 25 °C 2b, c Single Pulse Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5 mJ Maximum Power Dissipation TC = 25 °C PD 5 W TC = 70 °C 3.2 TA = 25 °C 2.4b, c TA = 70 °C 1.5b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 42 53 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 19 25

Page 3

www.vishay.com 2 Document Number: 65539 S09-2430-Rev. A, 16-Nov-09 Vishay Siliconix Si4176DY New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 28 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.2 2.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 8.3 A 0.016 0.020 Ω VGS = 4.5 V, ID = 7.2 A 0.022 0.027 Forward Transconductancea gfs VDS = 15 V, ID = 8.3 A 23 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 490 pFOutput Capacitance Coss 110 Reverse Transfer Capacitance Crss 61 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 8.3 A 9.6 15 nC VDS = 15 V, VGS = 4.5 V, ID = 8.3 A 4.7 7.1 Gate-Source Charge Qgs 1.65 Gate-Drain Charge Qgd 1.75 Gate Resistance Rg f = 1 MHz 0.5 2.6 5.2 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 2.2 Ω ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 15 25 ns Rise Time tr 15 25 Turn-Off Delay Time td(off) 13 20 Fall Time tf 10 15 Turn-On Delay Time td(on) VDD = 15 V, RL = 2.2 Ω ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 10 15 Rise Time tr 10 15 Turn-Off Delay Time td(off) 15 25 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.2 A Pulse Diode Forward Current ISM 40 Body Diode Voltage VSD IS = 6.7 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C 15 30 ns Body Diode Reverse Recovery Charge Qrr 8 16 nC Reverse Recovery Fall Time ta 8.5 ns Reverse Recovery Rise Time tb 6.5

Page 4

Document Number: 65539 S09-2430-Rev. A, 16-Nov-09 www.vishay.com 3 Vishay Siliconix Si4176DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 10 V thru 5 V VGS = 4 V VGS = 3 V VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D 0.000 0.008 0.016 0.024 0.032 0.040 0 10 20 30 40 VGS = 4.5 V VGS = 10 V - O n -R e s is ta n c e (Ω ) R D S (o n ) ID - Drain Current (A) 0 2 4 6 8 10 0 3 6 9 12 VDS = 24 V ID = 8.3 A VDS = 7.5 V VDS = 15 V - G a te -t o -S o u rc e V o lt a g e (V ) Qg - Total Gate Charge (nC) V G S Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e (p F ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID = 8.3 A VGS = 10 V; 4.5 V TJ - Junction Temperature (°C) (N o rm a liz e d ) - O n -R e s is ta n c e R D S (o n )

Page 5

www.vishay.com 4 Document Number: 65539 S09-2430-Rev. A, 16-Nov-09 Vishay Siliconix Si4176DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V ) V G S (t h ) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 TJ = 25 °C ID = 8.3 A TJ = 125 °C - O n -R e s is ta n c e (Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 30 P o w e r (W ) Time (s) 10 10000.10.010.001 1001 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited by RDS(on)* BVDSS Limited 1 ms 100 µs 10 ms 1 s 10 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - D ra in C u rr e n t (A ) I D

Page 6

Document Number: 65539 S09-2430-Rev. A, 16-Nov-09 www.vishay.com 5 Vishay Siliconix Si4176DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 3 6 9 12 15 0 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) I D - D ra in C u rr e n t (A ) Power Derating 0 1 2 3 4 5 25 50 75 100 125 150 TC - Case Temperature (°C) P o w e r (W )

Page 7

www.vishay.com 6 Document Number: 65539 S09-2430-Rev. A, 16-Nov-09 Vishay Siliconix Si4176DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65539. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 0.02 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 01110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.01 Single Pulse 0.02 0.05

Page 8

Vishay Siliconix Package Information Document Number: 71192 11-Sep-06 www.vishay.com 1 DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004" LB A1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 S

Page 9

Application Note 826 Vishay Siliconix www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR SO-8 0 .2 4 6 (6 .2 4 8 ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0 .1 5 2 (3 .8 6 1 ) 0 .0 4 7 (1 .1 9 4 ) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index

SI4176DY-T1-E3 Reviews

Average User Rating
5 / 5 (93)
★ ★ ★ ★ ★
5 ★
84
4 ★
9
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Dext*****inhas

August 21, 2020

I am a novice technician. I really rely on reviews to help guide me, as I do not have anyone to assist me with electronics. I purchased these items and report I am happy with the purchase. I took a chance and it was one of the better choices I made.

Saoi*****Stein

August 8, 2020

Good seller, incredible reliable.Item as described. Very professional

SI4176DY-T1-E3 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

SI4176DY-T1-E3 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

SI4176DY-T1-E3 Related Products

2220Y0500220JCT 2220Y0500220JCT Knowles Syfer, CAP CER 2220, 2220 (5750 Metric), TrenchFET? View
hotSD4933 SD4933 STMicroelectronics, TRANSISTOR RF MOSFET N-CH M177, M177, TrenchFET? View
DC60A20 DC60A20 Crydom Co., RELAY SSR DC OUT 20A 90-140VAC, Hockey Puck, TrenchFET? View
TNPW201073K2BEEF TNPW201073K2BEEF Vishay Dale, RES SMD 73.2K OHM 0.1% 0.4W 2010, 2010 (5025 Metric), TrenchFET? View
RCP0505B1K50GTP RCP0505B1K50GTP Vishay Dale, RES SMD 1.5K OHM 2% 5W 0505, 0505 (1412 Metric), TrenchFET? View
RMCF0603JG10M0 RMCF0603JG10M0 Stackpole Electronics Inc., RES SMD 10M OHM 5% 1/10W 0603, 0603 (1608 Metric), TrenchFET? View
THS101R8J THS101R8J TE Connectivity Passive Product, RES CHAS MNT 1.8 OHM 5% 10W, Axial, Box, TrenchFET? View
6-147102-3 6-147102-3 TE Connectivity AMP Connectors, 26 MODIV VRT DR 100/SFMNT 30AU, -, TrenchFET? View
TV07DZ-13-32PB-P15 TV07DZ-13-32PB-P15 Amphenol Aerospace Operations, CONN RCPT MALE 32POS GOLD SLDR, -, TrenchFET? View
MP8-2Y-2Y-4QE-00 MP8-2Y-2Y-4QE-00 Artesyn Embedded Technologies, MP CONFIGURABLE POWER SUPPLY, -, TrenchFET? View
VE-J30-CW-S VE-J30-CW-S Vicor Corporation, CONVERTER MOD DC/DC 5V 100W, Half Brick, TrenchFET? View
MT8880CSR1 MT8880CSR1 Microchip Technology, IC TXRX DTMF 20SOIC, 20-SOIC (0.295", 7.50mm Width), TrenchFET? View
Payment Methods
Delivery Services

Quick Inquiry

SI4176DY-T1-E3

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about SI4176DY-T1-E3?

0755-83210559 ext. 805 SalesDept@heisener.com heisener007 3008774228 Send Message

SI4176DY-T1-E3 Tags

  • SI4176DY-T1-E3
  • SI4176DY-T1-E3 PDF
  • SI4176DY-T1-E3 datasheet
  • SI4176DY-T1-E3 specification
  • SI4176DY-T1-E3 image
  • Vishay Siliconix
  • Vishay Siliconix SI4176DY-T1-E3
  • buy SI4176DY-T1-E3
  • SI4176DY-T1-E3 price
  • SI4176DY-T1-E3 distributor
  • SI4176DY-T1-E3 supplier
  • SI4176DY-T1-E3 wholesales

SI4176DY-T1-E3 is Available in