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SI7904DN-T1-E3

hot SI7904DN-T1-E3

SI7904DN-T1-E3

For Reference Only

Part Number SI7904DN-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 20V 5.3A 1212-8
Datasheet SI7904DN-T1-E3 Datasheet
Package PowerPAK? 1212-8 Dual
In Stock 380804 piece(s)
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SI7904DN-T1-E3

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SI7904DN-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet SI7904DN-T1-E3 Datasheet
PackagePowerPAK? 1212-8 Dual
SeriesTrenchFET?
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25��C5.3A
Rds On (Max) @ Id, Vgs30 mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id1V @ 935µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Power - Max1.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK? 1212-8 Dual
Supplier Device PackagePowerPAK? 1212-8 Dual

SI7904DN-T1-E3 Datasheet

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Vishay Siliconix Si7904DN Document Number: 71643 S-81544-Rev. G, 07-Jul-08 www.vishay.com 1 Dual N-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETS: 1.8 V Rated • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile APPLICATIONS • HDD Spindle Drive PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 20 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 N-Channel MOSFET G D S N-Channel MOSFET G D S 1 1 1 2 2 2 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View Ordering Information: Si7904DN-T1-E3 (Lead (Pb)-free) Si7904DN-T1-GE3 (Lead (Pb)-free and Halogen-free) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 7.7 5.3 A TA = 85 °C 5.5 3.8 Pulsed Drain Current IDM 20 Continuous Source Current (Diode Conduction)a IS 2.3 1.1 Single Pulse Avalanche Current L = 0.1 mH IAS 15 Avalanche Energy EAS 11 mJ Maximum Power Dissipationa TA = 25 °C PD 2.8 1.3 W TA = 85 °C 1.5 0.85 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendationsb,c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 35 44 °C/WSteady State 75 94 Maximum Junction-to-Case Steady State RthJC 4 5 RoHS COMPLIANT

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www.vishay.com 2 Document Number: 71643 S-81544-Rev. G, 07-Jul-08 Vishay Siliconix Si7904DN Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 935 µA 0.45 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 85 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 7.7 A 0.025 0.030 ΩVGS = 2.5 V, ID = 7.0 A 0.030 0.036 VGS = 1.8 V, ID = 1 A 0.037 0.045 Forward Transconductancea gfs VDS = 10 V, ID = 7.7 A 23 S Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.70 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 7.7 A 10.2 15 nCGate-Source Charge Qgs 1.3 Gate-Drain Charge Qgd 2.4 Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 15 23 ns Rise Time tr 50 75 Turn-Off DelayTime td(off) 60 90 Fall Time tf 45 68 Source-Drain Reverse Recovery Time trr IF = 2.3 A, dI/dt = 100 A/µs 40 80 Output Characteristics 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 5 thru 2 V VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D 0.5 V, 1 V 1.5 V Transfer Characteristics 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D

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Document Number: 71643 S-81544-Rev. G, 07-Jul-08 www.vishay.com 3 Vishay Siliconix Si7904DN TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.02 0.04 0.06 0.08 0 4 8 12 16 20 R D S (o n ) ID - Drain Current (A) VGS = 2.5 V VGS = 1.8 V VGS = 4.5 V - O n -r e s is ta n c e ( Ω ) 0 1 2 3 4 5 0 2 4 6 8 1 0 12 VDS = 10 V ID = 7.7 A - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) V G S VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T J = 25 °C 20 10 1 - S o u rc e C u rr e n t (A ) I S T J = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 300 600 900 1200 0 4 8 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e ( p F ) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 VGS = 4.5 V ID = 7.7 A TJ - Junction Temperature (°C) R D S (o n ) - O n -R e s is ta n c e (N o rm a liz e d ) 0.00 0.02 0.04 0.06 0.08 0 1 2 3 4 5 - O n -R e s is ta n c e ( Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V) ID = 1 A ID = 7.7 A

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www.vishay.com 4 Document Number: 71643 S-81544-Rev. G, 07-Jul-08 Vishay Siliconix Si7904DN TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71643. Threshold Voltage - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 935 µA V a ri a n c e ( V ) V G S (t h ) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient 0 10 50 Time (s) 30 40 0.1 60010.010.001 20 10 100 P o w e r (W ) Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 10 600 10 -110 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square W ave Pulse Duration (s) N o rm a liz e d E f f e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 . Duty Cycle, D = 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - T A = PDM Z thJA (t ) t1 t2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Case 2 1 0.1 0.01 0.2 0.05 0.02 Duty Cycle = 0.5 Square W ave Pulse Duration (s) N o rm a liz e d E f f e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e Single Pulse 0.1 10 -2 10 -1 10 1 10 -3

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