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Vishay Siliconix
Si7904DN
Document Number: 71643
S-81544-Rev. G, 07-Jul-08
www.vishay.com
1
Dual N-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFETS: 1.8 V Rated
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
APPLICATIONS
• HDD Spindle Drive
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) ID (A)
20
0.030 at VGS = 4.5 V 7.7
0.036 at VGS = 2.5 V 7.0
0.045 at VGS = 1.8 V 6.3
N-Channel MOSFET
G
D
S
N-Channel MOSFET
G
D
S
1
1
1
2
2
2
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm 3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7904DN-T1-E3 (Lead (Pb)-free)
Si7904DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C ID
7.7 5.3
A
TA = 85 °C 5.5 3.8
Pulsed Drain Current IDM 20
Continuous Source Current (Diode Conduction)a IS 2.3 1.1
Single Pulse Avalanche Current
L = 0.1 mH
IAS 15
Avalanche Energy EAS 11 mJ
Maximum Power Dissipationa
TA = 25 °C PD
2.8 1.3
W
TA = 85 °C 1.5 0.85
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendationsb,c 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta
t ≤ 10 s
RthJA
35 44
°C/WSteady State 75 94
Maximum Junction-to-Case Steady State RthJC 4 5
RoHS
COMPLIANT
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www.vishay.com
2
Document Number: 71643
S-81544-Rev. G, 07-Jul-08
Vishay Siliconix
Si7904DN
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 935 µA 0.45 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1
µA
VDS = 20 V, VGS = 0 V, TJ = 85 °C 5
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 20 A
Drain-Source On-State Resistancea RDS(on)
VGS = 4.5 V, ID = 7.7 A 0.025 0.030
ΩVGS = 2.5 V, ID = 7.0 A 0.030 0.036
VGS = 1.8 V, ID = 1 A 0.037 0.045
Forward Transconductancea gfs VDS = 10 V, ID = 7.7 A 23 S
Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.70 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = 10 V, VGS = 4.5 V, ID = 7.7 A
10.2 15
nCGate-Source Charge Qgs 1.3
Gate-Drain Charge Qgd 2.4
Turn-On Delay Time td(on)
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
15 23
ns
Rise Time tr 50 75
Turn-Off DelayTime td(off) 60 90
Fall Time tf 45 68
Source-Drain Reverse Recovery Time trr IF = 2.3 A, dI/dt = 100 A/µs 40 80
Output Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS = 5 thru 2 V
VDS - Drain-to-Source Voltage (V)
-
D
ra
in
C
u
rr
e
n
t
(A
)
I D
0.5 V, 1 V
1.5 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
TC = 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)
-
D
ra
in
C
u
rr
e
n
t
(A
)
I D
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Document Number: 71643
S-81544-Rev. G, 07-Jul-08
www.vishay.com
3
Vishay Siliconix
Si7904DN
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.02
0.04
0.06
0.08
0 4 8 12 16 20
R
D
S
(o
n
)
ID - Drain Current (A)
VGS = 2.5 V
VGS = 1.8 V
VGS = 4.5 V
-
O
n
-r
e
s
is
ta
n
c
e
(
Ω
)
0
1
2
3
4
5
0 2 4 6 8 1 0 12
VDS = 10 V
ID = 7.7 A
-
G
a
te
-t
o
-S
o
u
rc
e
V
o
lt
a
g
e
(
V
)
Qg - Total Gate Charge (nC)
V
G
S
VSD - Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T J = 25 °C
20
10
1
-
S
o
u
rc
e
C
u
rr
e
n
t
(A
)
I S
T J = 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
300
600
900
1200
0 4 8 12 16 20
Crss
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
C
-
C
a
p
a
c
it
a
n
c
e
(
p
F
)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 2 5 5 0 7 5 100 125 150
VGS = 4.5 V
ID = 7.7 A
TJ - Junction Temperature (°C)
R
D
S
(o
n
)
-
O
n
-R
e
s
is
ta
n
c
e
(N
o
rm
a
liz
e
d
)
0.00
0.02
0.04
0.06
0.08
0 1 2 3 4 5
-
O
n
-R
e
s
is
ta
n
c
e
(
Ω
)
R
D
S
(o
n
)
VGS - Gate-to-Source Voltage (V)
ID = 1 A
ID = 7.7 A
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www.vishay.com
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Document Number: 71643
S-81544-Rev. G, 07-Jul-08
Vishay Siliconix
Si7904DN
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71643.
Threshold Voltage
- 0.4
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
- 50 - 25 0 25 50 75 100 125 150
ID = 935 µA
V
a
ri
a
n
c
e
(
V
)
V
G
S
(t
h
)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0
10
50
Time (s)
30
40
0.1 60010.010.001
20
10 100
P
o
w
e
r
(W
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 -3 10 -2 1 10 600 10 -110 -4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square W ave Pulse Duration (s)
N
o
rm
a
liz
e
d
E
f f
e
c
ti
v
e
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
Im
p
e
d
a
n
c
e
1 . Duty Cycle, D =
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - T A = PDM Z thJA
(t )
t1
t2
t 1
t 2
Notes:
4. Surface Mounted
P DM
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
0.1
0.01
0.2
0.05
0.02
Duty Cycle = 0.5
Square W ave Pulse Duration (s)
N
o
rm
a
liz
e
d
E
f f
e
c
ti
v
e
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
Im
p
e
d
a
n
c
e
Single Pulse
0.1
10 -2 10 -1 10 1 10 -3
