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SI9435DY

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SI9435DY

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Part Number SI9435DY
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 30V 5.3A 8-SOIC
Datasheet SI9435DY Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 16,248 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 1 - Jun 6 (Choose Expedited Shipping)
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Part Number # SI9435DY (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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SI9435DY Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI9435DYDatasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesPowerTrench?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds690pF @ 15V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs50 mOhm @ 5.3A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

SI9435DY Datasheet

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January 2001  2001 Fairchild Semiconductor International Si9435DY Rev A(W) Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Motor Drive Features • –5.3 A, –30 V. RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 80 mΩ @ VGS = –4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) -5.3 A – Pulsed -20 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ° C Thermal Characteristics Rθ JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 ° C/W Rθ JC Thermal Resistance, Junction-to-Case (Note 1) 25 ° C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9435 Si9435DY 13’’ 12mm 2500 units S i9435D Y

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Si9435DY Rev A(W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µ A –30 V ∆ BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = –250 µ A, Referenced to 25° C –22 mV/° C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µ A IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µ A –1 –1.7 –3 V ∆ VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µ A, Referenced to 25° C 4 mV/° C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –5.3 A VGS = –10 V, ID = –5.3 A, TJ=125° C VGS = –4.5 V, ID = –4.2A, 38 54 55 50 79 80 mΩ ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A gFS Forward Transconductance VDS = –15 V, ID = –5.3 A 12 S Dynamic Characteristics Ciss Input Capacitance 690 pF Coss Output Capacitance 306 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 77 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 7 14 ns tr Turn–On Rise Time 10 18 ns td(off) Turn–Off Delay Time 19 34 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 11 20 ns Qg Total Gate Charge 14 23 nC Qgs Gate–Source Charge 2.4 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –5.3 A, VGS = –10 V 4.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –5.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –5.3 A (Note 2) –0.86 –1.2 V Notes: 1. Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% S i9435D Y

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Si9435DY Rev A(W) Typical Characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10.0V -7.5V -5.0V -3.0V -6.5V -4.0V-6.0V 0.5 1 1.5 2 2.5 0 5 10 15 -ID, DRAIN CURRENT (A) R D S (O N ), N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E VGS = -3.5V -4.5V -5.5V -7.0V -10.0V -4.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( o C) ID = -5.3A VGS = -10V 0 0.05 0.1 0.15 0.2 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -5.3A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 4 8 12 16 20 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125oC VDS = -10V 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. S i9435D Y

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Si9435DY Rev A(W) Typical Characteristics 0 2 4 6 8 10 0 5 10 15 Qg, GATE CHARGE (nC) ID = -5.3A VDS = -5V -10V -15V 0 200 400 600 800 1000 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100µ sRDS(ON) LIMIT VGS = -10V SINGLE PULSE Rθ JA = 125 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, TIME (sec) SINGLE PULSE Rθ JA = 125°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Rθ JA(t) = r(t) + Rθ JA Rθ JA = 125 oC/W TJ - TA = P * Rθ JA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. S i9435D Y

SI9435DY Reviews

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Dam*****Andra

May 15, 2020

Order arrived to Estonia in 3 days. Item as described. Well packed.

Khal*****ittal

May 14, 2020

The capacitors were exactly the ones I wanted. Perfect fit.

Conn*****rueger

May 8, 2020

It fit exactly in the same location as the original. Works great and no problem. Good purchase.

Finn*****Dass

May 1, 2020

Received Quickly. Excellent Communication. Capacitors Look Excellent.

Romi*****hada

April 30, 2020

Super Fast Delivery & Well Packaged - Great Service - No Problems

Elian*****trong

April 21, 2020

A good, reputable company that I will continue to deal with, thank you!

Aiya*****ashyap

April 16, 2020

good item, quick delivery, prefer to recommended.

Liv*****Ortiz

April 14, 2020

They worked as I expected. I'll definitely purchase again. Thank you!

Blak*****Dawson

April 10, 2020

Always the correct parts in the correct amounts are received. Fantastic Quality Control and Great Selection. Heisener has became to be one of my best suppliers for many years now.

Ame*****Avery

April 8, 2020

Nice to have an assortment on hand, just in case. Happy with this purchase.

SI9435DY Guarantees

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