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SIA811DJ-T1-E3

hot SIA811DJ-T1-E3

SIA811DJ-T1-E3

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Part Number SIA811DJ-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 20V 4.5A SC70-6
Datasheet SIA811DJ-T1-E3 Datasheet
Package PowerPAK? SC-70-6 Dual
In Stock 21370 piece(s)
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SIA811DJ-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SIA811DJ-T1-E3 Datasheet
PackagePowerPAK? SC-70-6 Dual
SeriesLITTLE FOOT?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25��C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds355pF @ 10V
Vgs (Max)��8V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.9W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs94 mOhm @ 2.8A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK? SC-70-6 Dual
Package / CasePowerPAK? SC-70-6 Dual

SIA811DJ-T1-E3 Datasheet

Page 1

Page 2

Vishay Siliconix SiA811DJ New Product Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 1 P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile APPLICATIONS • Cellular Charger Switch • Asynchronous DC/DC for Portable Devices • Load Switch for Portable Devices PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg - 20 0.094 at VGS = - 4.5 V - 4.5 4.9 nC0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) a 20 0.45 at 1 A 2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage (MOSFET) VDS - 20 VReverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ± 8 Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 25 °C ID - 4.5a A TC = 70 °C - 4.5 a TA = 25 °C - 3.6 b, c TA = 70 °C - 2.9 b, c Pulsed Drain Current (MOSFET) IDM - 8 Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C IS - 4.5a TA = 25 °C - 1.6 b, c Average Forward Current (Schottky) IF 2b Pulsed Forward Current (Schottky) IFM 5 Maximum Power Dissipation (MOSFET) TC = 25 °C PD 6.5 W TC = 70 °C 5 TA = 25 °C 1.9 b, c TA = 70 °C 1.2 b, c Maximum Power Dissipation (Schottky) TC = 25 °C 6.8 TC = 70 °C 4.3 TA = 25 °C 1.6 b, c TA = 70 °C 1.0 b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 K A S G D P-Channel MOSFET A K G S NC D 1 6 5 4 2 3 2.05 mm 2.05 mm PowerPAK SC-70-6 Dual K D 0.75 mm Marking Code X X X H A X Lot Traceability and Date code Part # code Ordering Information: SiA811DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) RoHS COMPLIANT

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www.vishay.com 2 Document Number: 74460 S-80436-Rev. B, 03-Mar-08 Vishay Siliconix SiA811DJ New Product Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)b, f t ≤ 5 s RthJA 52 65 °C/W Maximum Junction-to-Case (Drain) (MOSFET) Steady State RthJC 12.5 16 Maximum Junction-to-Ambient (Schottky)b, f t ≤ 5 s RthJA 62 76 Maximum Junction-to-Case (Drain) (Schottky) Steady State RthJC 15 18.5 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 16.2 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 4.5 V - 8 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 2.8 A 0.078 0.094 ΩVGS = - 2.5 V, ID = - 2.3 A 0.109 0.131 VGS = - 1.8 V, ID = - 0.54 A 0.153 0.185 Forward Transconductancea gfs VDS = - 10 V, ID = - 2.8 A 7 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 355 pFOutput Capacitance Coss 75 Reverse Transfer Capacitance Crss 50 Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A 8.5 13 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A 4.9 7.4 Gate-Source Charge Qgs 0.75 Gate-Drain Charge Qgd 1.2 Gate Resistance Rg f = 1 MHz 8 Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 4.5 V, Rg = 1 Ω 10 15 ns Rise Time tr 35 55 Turn-Off DelayTime td(off) 40 60 Fall Time tf 50 75 Turn-On Delay Time td(on) VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 8 V, Rg = 1 Ω 5 10 Rise Time tr 10 15 Turn-Off DelayTime td(off) 20 30 Fall Time tf 10 15

Page 4

Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 3 Vishay Siliconix SiA811DJ New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 4.5 A Pulse Diode Forward Current ISM - 8 Body Diode Voltage VSD IS = - 4.5 A, VGS = 0 V - 0.85 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4.5 A, di/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 13 26 nC Reverse Recovery Fall Time ta 10 ns Reverse Recovery Rise Time tb 15 SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Forward Voltage Drop VF IF = 1 A 0.41 0.45 V IF = 1 A, TJ = 125 °C 0.36 0.41 Maximum Reverse Leakage Current Irm Vr = 5 V 0.015 0.08 mA Vr = 5 V, TJ = 85 °C 0.5 5.0 Vr = 20 V 0.02 0.10 Vr = 20 V, TJ = 85 °C 0.7 7 Vr = 20 V, TJ = 125 °C 5 50 Junction Capacitance CT Vr = 10 V 60 pF

Page 5

www.vishay.com 4 Document Number: 74460 S-80436-Rev. B, 03-Mar-08 Vishay Siliconix SiA811DJ New Product MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 V GS = 2.5 thru 5 V 1.5 V VDS - Drain-to-Source Voltage (V) ) A( t n err u C ni ar D - I D 2 V 0.05 0.1 0.15 0.2 0.25 0.3 e ( Ω ) c n at si s e R- n O - R (o n ) S D I - Drain Current (A) V GS = 2.5 V GS = 4.5 V V GS = 1.8 V D 0 2 8 4 6 10 V 0 2 4 6 8 0 2 4 6 8 10 I D = 4.5 A ) V ( e g atl o V e c r u o S - ot- e t a G - Q g - Total Gate Charge (nC) V G S V DS = 10 V V DS = 16 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.3 0.6 0.9 1.2 1.5 T C = 125 °C VGS - Gate-to-Source Voltage (V) ) A( t n err u C ni ar D - I D T C = 25 °C T C = - 55 °C 0 100 200 300 400 500 600 0 4 8 12 16 20 C rss C oss Ciss VDS - Drain-to-Source Voltage (V) ) F p( e c n a ti c a p a C - C 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) R ) n o( S D s is ta n c e e R - n O - ) d e z il a mr o N( I D = 2.8 A V GS = 4.5 V, 2.5 V, 1.8 V

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Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 5 Vishay Siliconix SiA811DJ New Product MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Soure-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 0 0.2 0.6 0.8 1 1.2 0.4 VSD - Source-to-Drain Voltage (V) ) A ( t n e r r u C e c r u o S - I S T J = 25 °C T J = 150 °C 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 I D = 250 µA TJ - Temperature (°C) V ) h t ( S G ) V ( On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.1 0.15 0.2 0.25 0.3 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) R ) n o( S D ( Ω ) e c n at si s e R- n O - 0.05 I D = 2.8 A T A = 125 °C T A = 25 °C 100010010.001 0.01 0.1 10 P o w e r (W ) Pulse (s) 20 10 5 15 0 Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.1 1 1 0 100 I D(on) limited Limited by RDS(on)* IDM limited T A = 25 °C Single Pulse BVDSS limited 10 s DC 10 ms 100 ms 1 ms 1 s 100 µs 10 1 0.01 - D ra in C u rr e n t (A ) I D 0.1

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www.vishay.com 6 Document Number: 74460 S-80436-Rev. B, 03-Mar-08 Vishay Siliconix SiA811DJ New Product MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 0 25 50 75 100 125 150 I D ) A( t n err u C ni ar D - T C - Case Temperature (°C) Package Limited Power Derating 0 2 4 6 8 25 50 75 100 125 150 TC - Case Temperature (°C) P o w e r D is s ip a ti o n ( W )

Page 8

Vishay Siliconix SiA811DJ Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 7 New Product MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 1 0.1 0.01 N o rm a liz e d E f f e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 Square Wave Pulse Duration (s) Single Pulse 0.02 0.05 0.1 0.2 Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = R th JA = 85 °C/W 3. T JM - T A = P DM Z th JA (t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Case 10 -3 10 -2 10 -1 10 -4 1 0.01 Square Wave Pulse Duration (s) N o rm a liz e d E f f e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e Duty Cycle = 0.5 0.2 0.1 Single Pulse 0.02 0.05

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www.vishay.com 8 Document Number: 74460 S-80436-Rev. B, 03-Mar-08 Vishay Siliconix SiA811DJ New Product SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Reverse Current vs. Junction Temperature 0.00001 0.0001 0.001 0.01 0.1 1 - 50 - 25 0 25 50 TJ - Junction Temperature (°C) I F - R e v e rs e C u rr e n t (m A ) 15012510075 100 10 20 V 5 V Forward Voltage Drop 0.01 0.10 1 10 0.0 0.1 0.2 0.3 0.4 0.5 VF - Forward Voltage Drop (V) ) A( t n err u C dr a wr o F - I F T J = 25 °C T = 150 °C J Capacitance ) F p( e c n ati c a p a C n oit c n u J - 0 60 120 180 240 300 0 4 8 12 16 20 VRS - Reverse Voltage (V) C T

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Vishay Siliconix SiA811DJ Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 9 New Product SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74460. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 000101110-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.01 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 0.05 0.02 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 1 Single Pulse 0.05 0.02 0.10.2 10-3 10-2 10-1

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