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SIB437EDKT-T1-GE3

hotSIB437EDKT-T1-GE3

SIB437EDKT-T1-GE3

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Part Number SIB437EDKT-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 8V 9A SC-75-6
Datasheet SIB437EDKT-T1-GE3 Datasheet
Package PowerPAK? TSC-75-6
In Stock 798 piece(s)
Unit Price $ 0.2080 *
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 27 - Oct 2 (Choose Expedited Shipping)
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Part Number # SIB437EDKT-T1-GE3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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SIB437EDKT-T1-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SIB437EDKT-T1-GE3Datasheet
PackagePowerPAK? TSC-75-6
SeriesTrenchFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Vgs (Max)��5V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs34 mOhm @ 3A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK? TSC75-6
Package / CasePowerPAK? TSC-75-6

SIB437EDKT-T1-GE3 Datasheet

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Vishay Siliconix SiB437EDKT New Product Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 1 P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) - 8 0.034 at VGS = - 4.5 V - 9 a 10.5 nC 0.063 at VGS = - 1.8 V - 5 0.084 at VGS = - 1.5 V - 3 0.180 at VGS = - 1.2 V - 1 Marking Code X X X B M X Lot Traceability and Date code Part # code Ordering Information: SiB437EDKT-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET S D R G Thin PowerPAK SC-75-6L-Single D D G S S D D 1 2 3 4 5 6 1.60 mm 1.60 mm 0.60 mm Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 8 V Gate-Source Voltage VGS ± 5 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 9a A TC = 70 °C - 9 a TA = 25 °C - 7.5 b, c TA = 70 °C - 6 b, c Pulsed Drain Current IDM - 25 Continuous Source-Drain Diode Current TC = 25 °C IS - 9a TA = 25 °C - 2 b, c Maximum Power Dissipation TC = 25 °C PD 13 W TC = 70 °C 8.4 TA = 25 °C 2.4 b, c TA = 70 °C 1.6 b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t  5 s RthJA 41 51 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 7.5 9.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package with ultra-thin 0.6 mm height - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Typical ESD Performance 2000 V • Built in ESD Protection with Zener Diode • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices • Load Switch for Low Voltage Gate Drive

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www.vishay.com 2 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 Vishay Siliconix SiB437EDKT New Product Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 8 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 2 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 2.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.35 - 0.7 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 5 µA Zero Gate Voltage Drain Current IDSS VDS = - 8 V, VGS = 0 V - 1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 3 A 0.028 0.034  VGS = - 1.8 V, ID = - 1 A 0.050 0.063 VGS = - 1.5 V, ID = - 0.5 A 0.060 0.084 VGS = - 1.2 V, ID = - 0.5 A 0.100 0.180 Forward Transconductancea gfs VDS = - 4 V, ID = - 3 A 14 S Dynamicb Total Gate Charge Qg VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A 10.5 16 nC Gate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 3.3 Gate Resistance Rg f = 1 MHz 80 400 800  Turn-On Delay Time td(on) VDD = - 4 V, RL = 0.7  ID  - 6 A, VGEN = - 4.5 V, Rg = 1  90 180 ns Rise Time tr 170 340 Turn-Off Delay Time td(off) 690 1380 Fall Time tf 630 1260 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 9 A Pulse Diode Forward Current ISM - 25 Body Diode Voltage VSD IS = - 6 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 6 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 12 25 nC Reverse Recovery Fall Time ta 12 ns Reverse Recovery Rise Time tb 18

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Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 3 Vishay Siliconix SiB437EDKT New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Current vs. Gate-Source Voltage Output Characteristics On-Resistance vs. Drain Current 0.000 1.000 2.000 3.000 4.000 5.000 6.000 0 2 4 6 8 10 I G S S - G a te C u rr e n t (m A ) VGS - Gate-Source Voltage (V) TJ = 25 °C 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I D - D ra in C u rr e n t (A ) VDS - Drain-to-Source Voltage (V) VGS = 1 V VGS = 2 V VGS = 5 V thru 2.5 V VGS = 1.5 V 0.00 0.04 0.08 0.12 0.16 0.20 0 5 10 15 20 25 R D S (o n ) - O n -R e s is ta n c e ( Ω ) ID - Drain Current (A) VGS = 1.2 V VGS = 1.5 V VGS = 1.8 V VGS = 4.5 V Gate Current vs. Gate-Source Voltage Transfer Characteristics Gate Charge 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 0 2 4 6 8 10 I G S S - G a te C u rr e n t (A ) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 I D - D ra in C u rr e n t (A ) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 1 2 3 4 5 6 0 3 6 9 12 15 V G S - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) VDS = 6.4 V VDS = 4 V VDS = 2 VID = 7.4 A

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www.vishay.com 4 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 Vishay Siliconix SiB437EDKT New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.8 0.9 1.0 1.1 1.2 1.3 - 50 - 25 0 25 50 75 100 125 150 R D S (o n ) - O n -R e s is ta n c e (N o rm a li z e d ) TJ - Junction Temperature (°C) VGS = 1.8 V; ID = 1 A VGS = 1.5 V; ID = 0.5 A VGS = 1.2 V; ID = 0.5 A VGS = 4.5 V; ID = 3 A 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.0 1.0 2.0 3.0 4.0 5.0 R D S (o n ) - O n -R e s is ta n c e ( Ω ) VGS - Gate-to-Source Voltage (V) ID = 0.5 A; TJ = 125 °C ID = 3 A; TJ = 25 °C ID = 3 A; TJ = 125 °C ID = 0.5 A; TJ = 25 °C 1000 100 1 0.001 0.01 0.1 10 P o w e r (W ) Pulse (s) 20 10 5 15 0 Soure-Drain Diode Forward Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I S - S o u rc e C u rr e n t (A ) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 V G S (t h ) (V ) TJ - Temperature (°C) ID = 250 μA 0.01 0.1 1 10 100 0.1 1 10 100 I D - D ra in C u rr e n t (A ) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms T Single Pulse A = 25 °C BVDSS Limited 10 ms 1 s, 10 s DC 100 μs

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Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 5 Vishay Siliconix SiB437EDKT New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 4 8 12 16 20 0 25 50 75 100 125 150 I D - D ra in C u rr e n t (A ) TC - Case Temperature (°C) Package Limited Power Derating 0 3 6 9 12 15 25 50 75 100 125 150 TC - Case Temperature (°C) r (W ) e w o P

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www.vishay.com 6 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 Vishay Siliconix SiB437EDKT New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67402. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 0.1 0.01 N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 10-3 10-2 1 10 100010-110-4 100 Square Wave Pulse Duration (s) Duty Cycle = 0.5 Single Pulse 0.1 0.2 0.05 0.02 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 105 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Case 10 -3 10 -2 10 -110 -4 1 0.1 Square Wave Pulse Duration (s) N o rm a liz e d E f f e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e Duty Cycle = 0.5 Single Pulse 0.02 0.05 0.1 0.2

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Package Information www.vishay.com Vishay Siliconix Revison: 14-Mar-16 1 Document Number: 67873 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Case Outline for Thin PowerPAK® SC-75 Single Note • All dimensions are in millimeter • Package outline exculsive of mold flash and metal burr • Package outline inclusive of plating A1 Detail Z Pin 1 Pin 2 Pin 3 Pin 6 Pin 5 Pin 4 Pin 1 Dot by Marking Backside View of Single D E A be E 1 D1 C L Z Z D2 K1 K2K3 E 2 K 4 K E 3 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.525 0.60 0.65 0.0206 0.024 0.026 A1 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.0010 D 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC K 0.180 typ. 0.007 typ. K1 0.275 typ. 0.011 typ. K2 0.200 typ. 0.008 typ. K3 0.255 typ. 0.010 typ. K4 0.300 typ. 0.012 typ. L 0.15 0.25 0.35 0.006 0.010 0.014 ECN: T16-0083-Rev. B, 14-Mar-16 DWG: 5999

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Lol*****atton

August 18, 2020

EXACTLY what I was looking for -- one piece with a low forward voltage drop to isolate some DC power sources. They work fantastic!

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August 15, 2020

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August 12, 2020

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July 19, 2020

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July 15, 2020

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July 9, 2020

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July 6, 2020

Everything perfect. Great seller.

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July 6, 2020

I had no problems with this product. Would I recommend it. Yes.

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