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SIT8208AC-G2-33S-6.000000X

SIT8208AC-G2-33S-6.000000X

SIT8208AC-G2-33S-6.000000X

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Part Number SIT8208AC-G2-33S-6.000000X
Manufacturer SiTIME
Description -20 TO 70C, 2520, 25PPM, 3.3V, 6
Datasheet SIT8208AC-G2-33S-6.000000X Datasheet
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In Stock 122 piece(s)
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SIT8208AC-G2-33S-6.000000X Specifications

ManufacturerSiTIME
CategoryCrystals, Oscillators, Resonators - Oscillators
Datasheet SIT8208AC-G2-33S-6.000000XDatasheet
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SIT8208AC-G2-33S-6.000000X Datasheet

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The Smart Timing ChoiceThe Smart Timing Choice SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.02 Revised June 24, 2013 SiT8208 Ultra Performance Oscillator Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Features Applications  Any frequency between 1 and 80 MHz accurate to 6 decimal places  SATA, SAS, Ethernet, PCI Express, video, WiFi  100% pin-to-pin drop-in replacement to quartz-based oscillators  Computing, storage, networking, telecom, industrial control  Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)  Frequency stability as low as ±10 PPM  Industrial or extended commercial temperature range  LVCMOS/LVTTL compatible output  Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  Instant samples with Time Machine II and field programmable oscillators  Outstanding silicon reliability of 2 FIT or 500 million hour MTBF  Pb-free, RoHS and REACH compliant  Ultra short lead time Electrical Characteristics[1] Parameter Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 – 80 MHz Frequency Stability and Aging Frequency Stability F_stab -10 – +10 PPM Inclusive of Initial tolerance at 25 °C, and variations over operating temperature, rated power supply voltage and load-20 – +20 PPM -25 – +25 PPM -50 – +50 PPM First year Aging F_aging -1.5 – +1.5 PPM 25°C 10-year Aging -5 – +5 PPM 25°C Operating Temperature Range Operating Temperature Range T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial Supply Voltage and Current Consumption Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported. Contact SiTime for additional information.2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.97 3.3 3.63 V Current Consumption Idd – 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V – 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V OE Disable Current I_OD – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down – – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down Standby Current I_std – – 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down – – 10 A Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down LVCMOS Output Characteristics Duty Cycle DC 45 – 55 % Rise/Fall Time Tr, Tf – 1.2 2 ns 15 pF load, 10% - 90% Vdd Output Voltage High VOH 90% – – Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V) IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)Output Voltage Low VOL – – 10% Vdd Input Characteristics Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high 2 – – MΩ Pin 1, ST logic low

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The Smart Timing ChoiceThe Smart Timing Choice SiT8208 Ultra Performance Oscillator Rev. 1.02 Page 2 of 10 www.sitime.com Thermal Consideration Electrical Characteristics[1] (Continued) Parameter Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time T_start – 7 10 ms Measured from the time Vdd reaches its rated minimum value OE Enable/Disable Time T_oe – – 150 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles Resume Time T_resume – 6 10 ms In standby mode, measured from the time ST pin crosses 50% threshold. Refer to Figure 5. Jitter RMS Period Jitter T_jitt – 1.5 2 ps – 2 3 ps f = 75 MHz, Vdd = 1.8V RMS Phase Jitter (random) T_phj – 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Pin Configuration Pin Symbol Functionality 1 OE/ ST Output Enable H or Open[2]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open[2]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. 2 GND Power Electrical ground[3] 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[3] Notes: 2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment. 3. A capacitor of value 0.1 µF between Vdd and GND is recommended. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor- mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 °C VDD -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature – 150 °C Package JA, 4 Layer Board (°C/W) JA, 2 Layer Board (°C/W) JC, Bottom (°C/W) 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C 1 4OE/ST VDD 32GND OUT Top View

Page 4

The Smart Timing ChoiceThe Smart Timing Choice SiT8208 Ultra Performance OscillatorNotes: 4. Duty Cycle is computed as Duty Cycle = TH/Period. 5. SiT8208 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime. Phase Noise Plot Figure 1. Phase Noise, 10 MHz, 3.3V, LVCMOS Output Test Circuit and Waveform Figure 2. Test Circuit Figure 3. Waveform 10 3 10 4 10 5 10 6 -170 -160 -150 -140 -130 -120 -110 -100 Frequency Offset (Hz) P ha se N oi se ( dB c/ H z) Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps 4 1 3 2 0.1µF Power Supply OE/ST Function Test Point 15pF (including probe and fixture capacitance) Vdd Vout Vdd 1k 90% Vdd High Pulse (TH) 50% 10% Vdd Period tftr Low Pulse (TL)Rev. 1.02 Page 3 of 10 www.sitime.com

Page 5

The Smart Timing Choice SiT8208 Ultra Performance OscillatorThe Smart Timing Choice Timing Diagram Figure 4. Startup Timing (OE/ST Mode) Figure 5. Standby Resume Timing (ST Mode Only) u Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only) Notes: 6. SiT8208 supports NO RUNT pulses and No glitches during startup or resume. 7. SiT8208 supports gated output which is accurate within rated frequency stability from the first cycle. 90% Vdd, 2.5/2,8/3.3V devices 95% Vdd, 1.8V devices Vdd Pin 4 Voltage CLK Output T_start T_start: Time to start from power-off NO Glitch first cycle 50% Vdd Vdd ST Voltage CLK Output T_resume T_resume: Time to resume from ST 50% Vdd Vdd OE Voltage CLK Output T_OE T_OE: Time to re-enable the clock output 50% Vdd Vdd OE Voltage CLK Output T_OE: Time to put the output drive in High Z mode HZ T_OERev. 1.02 Page 4 of 10 www.sitime.com

Page 6

The Smart Timing Choice SiT8208 Ultra Performance OscillatorThe Smart Timing Choice Performance Plots Figure 8. Idd vs Frequency Figure 9. RMS Period Jitter vs Frequency Figure 10. Duty Cycle vs Frequency Figure 11. RMS Phase Jitter vs Frequency Figure 12. Idd vs Temperature, 10 MHz Output Figure 13. Rise Time vs Temperature, 75 MHz Output Note: 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 10 20 30 40 50 60 70 80 Frequency, MHz Id d, m A 3.3V 2.5V 1.8V 0.00 0.50 1.00 1.50 2.00 2.50 3.00 10 20 30 40 50 60 70 80 Frequency, MHz R M S P er io d jit te r, p s 3.3V 2.5V 1.8V 45.0 46.0 47.0 48.0 49.0 50.0 51.0 52.0 53.0 54.0 55.0 10 20 30 40 50 60 70 80 Frequency, MHz D ut y cy cl e, % 3.3V 2.5V 1.8V 2.5V 3.3V 1.8V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 20 30 40 50 60 70 80 Frequency, MHz R M S P ha se ji tte r, p s 25 27 29 31 33 35 -40 -20 0 20 40 60 80 Temperature, °C Id d, m A 1.8V 2.5V 3.3V 0.0 0.5 1.0 1.5 2.0 -40 -20 0 20 40 60 80 Temperature, °C R is e T im e, n s 1.8V 2.5V 3.3VRev. 1.02 Page 5 of 10 www.sitime.com

Page 7

The Smart Timing ChoiceThe Smart Timing Choice SiT8208 Ultra Performance OscillatorProgrammable Drive Strength The SiT8208 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: • Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time • Improves the downstream clock receiver’s (RX) jitter by de- creasing (speeding up) the clock rise/fall time. • Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Applications Note section; http://www.sitime.com/support/application-notes. EMI Reduction by Slowing Rise/Fall Time Figure 14 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. Figure 14. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to increase rise/fall time (edge rate) of the input clock. Some chipsets would require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The SiT8208SiT8208 provides up to 3 additional high drive strength settings for very fast rise/fall time. Refer to the Rise/Fall Time Tables to determine the proper drive strength. High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8208 device with default drive strength setting, the typical rise/fall time is 1.15ns for 15 pF output load. The typical rise/fall time slows down to 2.72ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.41ns by then increasing the drive strength setting on the SiT8208. The SiT8208 can support up to 60 pF or higher in maximum capacitive loads with up to 3 additional drive strength settings. Refer to the Rise/Tall Time Tables to determine the proper drive strength for the desired combination of output load vs. rise/fall time SiT8208 Drive Strength Selection Tables 1 through 5 define the rise/fall time for a given capac- itive load and supply voltage. 1. Select the table that matches the SiT8208 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the appli- cation requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 1 through 4, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: Example 1 Calculate fMAX for the following condition: • Vdd = 1.8V (Table 1) • Capacitive Load: 30 pF • Desired Tr/f time = 3 ns (rise/fall time part number code = G) Part number for the above example: SiT8208AIGG2-18E-55.500000 Drive strength code is inserted here. Default setting is “-”   1 3 5 7 9 11 -80 -70 -60 -50 -40 -30 -20 -10 0 10 Harmonic number H ar m on ic a m pl itu de ( dB ) tr ise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 = 1 6 x (Trise) Max FrequencyRev. 1.02 Page 6 of 10 www.sitime.com

Page 8

SiT8208 Ultra Performance OscillatorThe Smart Timing ChoiceThe Smart Timing Choice Rise/Fall Time (10% to 90%) vs CLOAD Tables Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 2. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 4. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 12.45 17.68 19.48 46.21 57.82 A 6.50 10.27 16.21 23.92 30.73 R 4.38 7.05 11.61 16.17 20.83 B 3.27 5.30 8.89 12.18 15.75 S 2.62 4.25 7.20 9.81 12.65 D 2.19 3.52 6.00 8.31 10.59 T 1.76 3.01 5.14 7.10 9.15 E 1.59 2.59 4.49 6.25 7.98 U 1.49 2.28 3.96 5.55 7.15 F 1.22 2.10 3.57 5.00 6.46 W 1.07 1.88 3.23 4.50 5.87 G 1.01 1.64 2.95 4.12 5.40 X 0.96 1.50 2.74 3.80 4.98 K 0.92 1.41 2.56 3.52 4.64 Y 0.88 1.34 2.39 3.25 4.32 Q 0.86 1.29 2.24 3.04 4.06 Z or "-": Default 0.82 1.24 2.07 2.89 3.82 M 0.77 1.20 1.94 2.72 3.61 N 0.66 1.15 1.84 2.58 3.41 P 0.51 1.09 1.76 2.45 3.24 Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 8.68 13.59 18.36 32.70 42.06 A 4.42 7.18 11.93 16.60 21.38 R 2.93 4.78 8.15 11.19 14.59 B 2.21 3.57 6.19 8.55 11.04 S 1.67 2.87 4.94 6.85 8.80 D 1.50 2.33 4.11 5.68 7.33 T 1.06 2.04 3.50 4.84 6.26 E 0.98 1.69 3.03 4.20 5.51 U 0.93 1.48 2.69 3.73 4.92 F 0.90 1.37 2.44 3.34 4.42 W 0.87 1.29 2.21 3.04 4.02 G or "-": Default 0.67 1.20 2.00 2.79 3.69 X 0.44 1.10 1.86 2.56 3.43 K 0.38 0.99 1.76 2.37 3.18 Y 0.36 0.83 1.66 2.20 2.98 Q 0.34 0.71 1.58 2.07 2.80 Z 0.33 0.65 1.51 1.95 2.65 M 0.32 0.62 1.44 1.85 2.50 N 0.31 0.59 1.37 1.77 2.39 P 0.30 0.57 1.29 1.70 2.28 Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 7.93 12.69 17.94 30.10 38.89 A 4.06 6.66 11.04 15.31 19.80 R 2.68 4.40 7.53 10.29 13.37 B 2.00 3.25 5.66 7.84 10.11 S 1.59 2.57 4.54 6.27 8.07 D 1.19 2.14 3.76 5.21 6.72 T 1.00 1.79 3.20 4.43 5.77 E 0.94 1.51 2.78 3.84 5.06 U 0.90 1.38 2.48 3.40 4.50 F 0.87 1.29 2.21 3.03 4.05 W 0.62 1.19 1.99 2.76 3.68 G or "-": Default 0.41 1.08 1.84 2.52 3.36 X 0.37 0.96 1.72 2.33 3.15 K 0.35 0.78 1.63 2.15 2.92 Y 0.33 0.67 1.54 2.00 2.75 Q 0.32 0.63 1.46 1.89 2.57 Z 0.31 0.60 1.39 1.80 2.43 M 0.30 0.57 1.31 1.72 2.30 N 0.30 0.56 1.22 1.63 2.22 P 0.29 0.54 1.13 1.55 2.13 Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 7.18 11.59 17.24 27.57 35.57 A 3.61 6.02 10.19 13.98 18.10 R 2.31 3.95 6.88 9.42 12.24 B 1.65 2.92 5.12 7.10 9.17 S 1.43 2.26 4.09 5.66 7.34 D 1.01 1.91 3.38 4.69 6.14 T 0.94 1.51 2.86 3.97 5.25 E 0.90 1.36 2.50 3.46 4.58 U 0.86 1.25 2.21 3.03 4.07 F or "-": Default 0.48 1.15 1.95 2.72 3.65 W 0.38 1.04 1.77 2.47 3.31 G 0.36 0.87 1.66 2.23 3.03 X 0.34 0.70 1.56 2.04 2.80 K 0.33 0.63 1.48 1.89 2.61 Y 0.32 0.60 1.40 1.79 2.43 Q 0.32 0.58 1.31 1.69 2.28 Z 0.30 0.56 1.22 1.62 2.17 M 0.30 0.55 1.12 1.54 2.07 N 0.30 0.54 1.02 1.47 1.97 P 0.29 0.52 0.95 1.41 1.90 Rise/Fall Time Typ (ns)Rev. 1.02 Page 7 of 10 www.sitime.com

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The Smart Timing ChoiceThe Smart Timing Choice SiT8208 Ultra Performance OscillatorInstant Samples with Time Machine and Field Programmable Oscillators SiTime supports a field programmable version of the SiT8208 low power oscillator for fast prototyping and real time custom- ization of features. The field programmable devices (FP devices) are available for all five standard SiT8208 package sizes and can be configured to one’s exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. Customizable Features of the SiT8208 FP Devices Include • Any frequency between 1 – 110 MHz • Three frequency stability options, ±20 PPM, ±25 PPM, ±50 PPM • Two operating temperatures, -20 to 70°C or -40 to 85°C • Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and 3.3V • Output drive strength For more information regarding SiTime’s field programmable solutions, visit http://www.sitime.com/time-machine and http://www.sitime.com/fp-devices. SiT8208 is typically factory-programmed per customer ordering codes for volume delivery. Rev. 1.02 Page 8 of 10 www.sitime.com

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The Smart Timing Choice SiT8208 Ultra Performance OscillatorThe Smart Timing Choice Notes: 9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 10. A capacitor of value 0.1 µF between Vdd and GND is recommended. Dimensions and Patterns Package Size – Dimensions (Unit: mm) [9] Recommended Land Pattern (Unit: mm) [10] 2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint) 3.2 x 2.5 x 0.75 mm 5.0 x 3.2 x 0.75 mm 7.0 x 5.0 x 0.90 mm YXXXX 2.7 ± 0.05 1.00 0.75 ± 0.05 2. 4 ± 0 .0 5 0.85 1. 25 0 .5 0 1.9 1.1 1. 5 1 .0 3.2 ± 0.05 2. 5 ± 0 .0 5 2.1 0.9 0. 7 0. 9 0 .7 5 ± 0 .0 5 #1#2 #4#3 #2#1 #3#4 YXXXX 2.2 1. 9 1.4 1. 2 5.0 ± 0.05 3. 2 ± 0 .0 5 2.39 0 .8 1.15 1 .1 0 .7 5 ± 0 .0 5 #1#2 #4#3 #2#1 #3#4 YXXXX 2.54 1.5 1. 6 2. 2 5 .0 ± 0 .0 5 1.4 1 .1 5.087.0 ± 0.05 2 .6 0 .9 0 ± 0 .1 0 YXXXX 5.08 3. 81 2.2 2. 0 Rev. 1.02 Page 9 of 10 www.sitime.com

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