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SM6T68CA-E3/52

hot SM6T68CA-E3/52

SM6T68CA-E3/52

For Reference Only

Part Number SM6T68CA-E3/52
Manufacturer Vishay Semiconductor Diodes Division
Description TVS DIODE 58.1VWM 92VC SMB
Datasheet SM6T68CA-E3/52 Datasheet
Package DO-214AA, SMB
In Stock 11500 piece(s)
Unit Price $ 0.2016 *
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SM6T68CA-E3/52

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SM6T68CA-E3/52 Specifications

ManufacturerVishay Semiconductor Diodes Division
CategoryCircuit Protection - TVS - Diodes
Datasheet SM6T68CA-E3/52 Datasheet
PackageDO-214AA, SMB
SeriesSM6T, TransZorb?
TypeZener
Bidirectional Channels1
Voltage - Reverse Standoff (Typ)58.1V
Voltage - Breakdown (Min)64.6V
Voltage - Clamping (Max) @ Ipp92V
Current - Peak Pulse (10/1000��s)6.5A
Power - Peak Pulse600W
Power Line ProtectionNo
ApplicationsGeneral Purpose
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMBJ)

SM6T68CA-E3/52 Datasheet

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SM6T Series www.vishay.com Vishay General Semiconductor Revision: 14-Jul-17 1 Document Number: 88385 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount TRANSZORB® Transient Voltage Suppressors DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SM6T12CA). Electrical characteristics apply in both directions. FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal PRIMARY CHARACTERISTICS VWM 5.80 V to 188 V VBR uni-directional 6.8 V to 220 V VBR bi-directional 6.8 V to 220 V PPPM 600 W PD 5.0 W IFSM (uni-directional only) 100 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package SMB (DO-214AA) SMB (DO-214AA) Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) PPPM 600 W Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) IPPM See next table A Power dissipation on infinite heatsink at TA = 50 °C PD 5.0 W Peak forward surge current 10 ms single half sine-wave uni-directional only (2) IFSM 100 A Operating junction and storage temperature range TJ, TSTG -65 to +150 °C

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SM6T Series www.vishay.com Vishay General Semiconductor Revision: 14-Jul-17 2 Document Number: 88385 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) For bi-directional devices add suffix “CA” (2) VBR measured after IT applied for 300 μs square wave pulse (3) For bi-polar devices with VRM = 10 V or under, the IRM limit is doubled Note (1) Mounted on minimum recommended pad layout Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TYPE (1) DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (2) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VRM (V) LEAKAGE CURRENT IRM AT VRM (μA) CLAMPING VOLTAGE VC AT IPPM 10/1000 μs CLAMPING VOLTAGE VC AT IPPM 8/20 μs αT MAX. 10-4/°C UNI BI MIN. MAX. (V) (A) (V) (A) SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7 SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1 SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3 SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8 SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4 SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8 SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2 SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4 SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6 SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7 SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59 68 9.8 SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9 SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0 SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4 SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6 SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8 SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8 SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient air (1) RθJA 100 °C/ W Typical thermal resistance, junction to lead RθJL 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM6T10A-E3/52 0.096 52 750 7" diameter plastic tape and reel SM6T10A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel SM6T10AHE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel SM6T10AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel SM6T10A-M3/52 0.096 52 750 7" diameter plastic tape and reel SM6T10A-M3/5B 0.096 5B 3200 13" diameter plastic tape and reel SM6T10AHM3/H (1) 0.096 H 750 7" diameter plastic tape and reel SM6T10AHM3/I (1) 0.096 I 3200 13" diameter plastic tape and reel

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SM6T Series www.vishay.com Vishay General Semiconductor Revision: 14-Jul-17 3 Document Number: 88385 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current 0.1 1 10 100 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad AreasP P P M - P e a k P u ls e P o w e r (k W ) td - Pulse Width (s) 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 25 50 75 100 100 75 50 25 0 125 150 175 200 TJ - Initial Temperature (°C) P e a k P u ls e P o w e r (P P P ) o r C u rr e n t (I P P ) D e ra ti n g i n P e rc e n ta g e , % 0 50 100 150 td 0 1.0 2.0 3.0 4.0 I P P M - P e a k P u ls e C u rr e n t, % I R S M t - Time (ms) tr = 10 µs Peak Value IPPM Half Value - IPPM IPP 2 10/1000 µs Waveform as defined by R.E.A. TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM 10 100 1000 6000 101 100 200 Uni-Directional Bi-Directional C J - J u n c ti o n C a p a c it a n c e ( p F ) VWM - Reverse Stand-Off Voltage (V) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Zero Bias VR, Measured at Stand-Off Voltage VWM 0.1 1.0 10 100 0.001 0.01 0.1 10 1 100 1000 t - Pulse Duration (s) T ra n s ie n t T h e rm a l Im p e d a n c e ( °C /W ) 10 200 100 101 100 8.3 ms Single Half Sine-Wave Uni-Directional Only Number of Cycles at 60 Hz P e a k F o rw a rd S u rg e C u rr e n t (A )

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SM6T Series www.vishay.com Vishay General Semiconductor Revision: 14-Jul-17 4 Document Number: 88385 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) Max. 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) Cathode Band SMB (DO-214AA) Mounting Pad Layout 0.085 (2.159) MAX. 0.220 REF. 0.086 (2.18) MIN. 0.060 (1.52) MIN.

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