| Part Number | STA431A |
|---|---|
| Manufacturer | Sanken |
| Description | TRANS 2NPN/2PNP 60V 3A 10SIP |
| Datasheet | STA431A Datasheet |
| Package | 10-SIP |
| In Stock | 259 piece(s) |
| Unit Price | $ 3.2300 * |
| Lead Time | Can Ship Immediately |
| Estimated Delivery Time | Jan 28 - Feb 2 (Choose Expedited Shipping) |
| Request for Quotation |
|
Part Number # STA431A (Transistors - Bipolar (BJT) - Arrays) is manufactured by Sanken and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
For STA431A specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add STA431A with quantity into BOM. Heisener.com does NOT require any registration to request a quote of STA431A.
| Manufacturer | Sanken |
| Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays |
| Datasheet | STA431ADatasheet |
| Package | 10-SIP |
| Series | - |
| Transistor Type | 2 NPN, 2 PNP (H-Bridge) |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 4V |
| Power - Max | 4W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 10-SIP |
| Supplier Device Package | 10-SIP |
170 Characteristic curves (Ta=25° C) Symbol Unit VCBO 60 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 3 –3 A ICP 6 (PW≤ 10ms, Du≤ 50%) –6 (PW≤ 10ms, Du≤ 50%) A PT 4 (Ta=25° C) W 20 (Tc=25° C) Tj 150 ° C Tstg –40 to +150 ° C STA431A Ratings NPN PNP 0 0 1 2 4 3 1 2 3 VCE (V) IC (A ) 54 6 IB =7 0m A 60mA 50mA 40mA 30mA 20mA 10mA 5mA 0.01 IC (A) 0.1 1 40.50.05 20 100 50 500 h F E (VCE=4V) typ 0 VBE (V) 0.5 1.51.0 0 2 3 1 4 IC (A ) (VCE=4V) T a = 1 2 5 °C 7 5 °C 2 5 °C – 3 0 °C 0 –1 –2 0 –1 –2 –3 –4 –3 VCE (V) IC (A ) –4 –5 –6 IB =– 80 m A –6 0m A –50 mA –40m A –30mA –20mA –10mA –5mA –0.01 IC (A) –0.1 typ –1 –4–0.5–0.05 20 100 50 500 h F E (VCE=–4V) 0 VBE (V) –0.5 –1.5–1.0 0 –2 –3 –1 –4 IC (A ) (VCE=–4V) T a = 1 2 5 °C 7 5 °C 2 5 °C – 3 0 °C 6 10 7 9 8 3 5 2 4 1 PNP + NPN H-bridge 0.01 IC (A) 0.1 10.5 40.05 20 100 50 500 h F E (VCE=4V) Ta=125° C 75° C 25° C –30° C –0.01 IC (A) 0.1 –1 –4–0.5–0.05 20 100 50 500 h F E (VCE=–4V) Ta=125 ° C 75° C 25° C –30° C External dimensions D • • • STA (10-pin) Absolute maximum ratings ■Equivalent circuit diagram NPN PNP NPN NPN PNP PNP NPN PNP IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
Elia*****xwell
December 23, 2020
Sava*****Mehra
December 18, 2020
Janiy*****glish
December 15, 2020
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