Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811

STD6N62K3

hotSTD6N62K3

STD6N62K3

For Reference Only

Part Number STD6N62K3
Manufacturer STMicroelectronics
Description MOSFET N-CH 620V 5.5A DPAK
Datasheet STD6N62K3 Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 10,820 piece(s)
Unit Price $ 0.7084 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 15 - Jul 20 (Choose Expedited Shipping)
Request for Quotation

Part Number # STD6N62K3 (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For STD6N62K3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add STD6N62K3 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of STD6N62K3.

STD6N62K3 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STD6N62K3Datasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesSuperMESH3?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)620V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs25.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds706pF @ 50V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)90W (Tc)
Rds On (Max) @ Id, Vgs1.28 Ohm @ 2.8A, 10V
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

STD6N62K3 Datasheet

Page 1

Page 2

1 3 TAB 2 DPAK D(2, TAB) G(1) S(3) AM01475V1 Features Order codes VDS RDS(on) max. ID PTOT STD6N62K3 620 V 1.2 Ω 5.5 A 90 W • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications Description This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Product status STD6N62K3 Product summary Order code STD6N62K3 Marking 6N62K3 Package DPAK Packing Tape and reel N-channel 620 V, 0.95 Ω typ., 5.5 A MDmesh™ K3 Power MOSFET in DPAK package STD6N62K3 Datasheet DS8813 - Rev 2 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com

Page 3

1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 620 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 5.5 A ID Drain current (continuous) at TC = 100 °C 3 A IDM (1) Drain current (pulsed) 22 A PTOT Total dissipation at TC = 25 °C 90 W IAR (2) Avalanche current, repetitive or not-repetitive 5.5 A EAS (3) Single pulse avalanche energy 140 mJ ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2.5 kV dv/dt (4) Peak diode recovery voltage slope 12 V/ns Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range 1. Pulse width limited by safe operating area. 2. Pulse width limited by Tj max. 3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 4. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.39 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. STD6N62K3 Electrical ratings DS8813 - Rev 2 page 2/19

Page 4

2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 620 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 620 V 0.8 µA VGS = 0 V, VDS = 620 V TC = 125 °C (1) 50 µA IGSS Gate body leakage current VGS = ±20 V, VDS = 0 V ± 9 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.8 A 0.95 1.2 Ω 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V - 875 - pFCoss Output capacitance 100 Crss Reverse transfer capacitance 17 Co(er)(1) Equivalent output capacitance energy related VGS = 0 V, VDS = 0 to 480 V - 28 - pF Co(tr) (2) Equivalent output capacitance time related 63 RG Intrinsic gate resistance f = 1 MHz open drain - 3.5 - Ω Qg Total gate charge VDD = 496 V, ID = 5.5 A, VGS = 0 to 10 V (see Figure 15. Test circuit for gate charge behavior) - 34 - nCQgs Gate-source charge 4 Qgd Gate-drain charge 22 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 310 V, ID = 2.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) - 22 - ns tr Rise time 12 td(off) Turn-off delay time 49 tf Fall time 20 STD6N62K3 Electrical characteristics DS8813 - Rev 2 page 3/19

Page 5

Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 5.5 A ISDM (1) Source-drain current (pulsed) 27 VSD (2) Forward on voltage ISD = 5.5 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 290 ns Qrr Reverse recovery charge 1.9 μC IRRM Reverse recovery current 13.5 A trr Reverse recovery time ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 335 ns Qrr Reverse recovery charge 2.4 μC IRRM Reverse recovery current 14.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Table 7. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage ID = 0 A, IGS = ±1 mA ±30 - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. STD6N62K3 Electrical characteristics DS8813 - Rev 2 page 4/19

Page 6

2.1 Electrical characteristics curves Figure 1. Safe operating area ID 101 100 10-1 100 102 VDS(V)101 (A) O pe ra tio n in th is ar ea is Li m ite d by m ax R D S( on ) 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse AM09052v1 10-1 Figure 2. Thermal impedance GC20460 100 10-1 10-2 10-5 10-4 10-3 10-2 10-1 K tp (s) Figure 3. Output characteristics ID 6 4 2 0 0 10 VDS(V)20 (A) 8 10 5V 6V VGS=10V 12 AM09054v1 Figure 4. Transfer characteristics ID 3 2 1 0 0 4 VGS(V)8 (A) 2 6 10 4 5 6 7 8 VDS=15V AM09055v1 Figure 5. Gate charge vs gate-source voltage VGS 6 4 2 0 0 Qg(nC) (V) 20 8 10 10 VDD=496V ID=5.5A 30 12 300 200 100 0 400 500 VDS VDS(V) AM09057v1 Figure 6. Static drain-source on resistance RDS(on) 1.00 0.95 0.90 0.85 0 2 ID(A) (W) 1 3 1.05 1.10 1.15 VGS=10V 54 6 AM09056v1 STD6N62K3 Electrical characteristics curves DS8813 - Rev 2 page 5/19

Page 7

Figure 7. Capacitance variations C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM09058v1 Figure 8. Output capacitance stored energy Eoss 3 2 1 0 0 100 VDS(V) (µJ) 400 4 200 300 5 500 AM09059v1 Figure 9. Normalized gate threshold voltage vs temperature VGS(th) 1.00 0.90 0.80 0.70 -75 TJ(°C) (norm) -25 1.10 7525 125 ID=50µA AM09061v1 Figure 10. Normalized on resistance vs temperature RDS(on) 2.0 1.5 1.0 0.5 -75 TJ(°C) (norm) -25 7525 125 0.0 2.5 ID=2.8A VGS=10V AM09062v1 Figure 11. Normalized BVDSS vs temperature BVDSS -75 TJ(°C) (norm) -25 7525 125 0.90 0.95 1.00 1.05 1.10 ID=1mA AM09060v1 Figure 12. Source-drain diode forward characteristics VSD 0 2 ISD(A) (V) 1 53 4 0 0.2 0.4 0.6 0.8 1.0 TJ=25°C TJ=150°C TJ=-50°C 6 AM09063v1 STD6N62K3 Electrical characteristics curves DS8813 - Rev 2 page 6/19

Page 8

Figure 13. Maximum avalanche energy vs temperature EAS 0 40 TJ(°C) (mJ) 20 10060 80 0 20 40 60 80 120 140 100 120 140 160 ID=5.5 A VDD=50 V AM09064v1 STD6N62K3 Electrical characteristics curves DS8813 - Rev 2 page 7/19

Page 9

3 Test circuits Figure 14. Test circuit for resistive load switching times AM01468v1 VD RG RL D.U.T. 2200 μF VDD 3.3 μF+ pulse width VGS Figure 15. Test circuit for gate charge behavior AM01469v1 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V IG= CONST 100 Ω 100 nF D.U.T. +pulse width VGS 2200 μF VG VDD Figure 16. Test circuit for inductive load switching and diode recovery times AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G D S 100 µH µF 3.3 1000 µF VDD D.U.T. + _ + fast diode Figure 17. Unclamped inductive load test circuit AM01471v1 VD ID D.U.T. L VDD+ pulse width Vi 3.3 µF 2200 µF Figure 18. Unclamped inductive waveform AM01472v1 V(BR)DSS VDDVDD VD IDM ID Figure 19. Switching time waveform AM01473v1 0 VGS 90% VDS 90% 10% 90% 10% 10% ton td(on) tr 0 toff td(off) tf STD6N62K3 Test circuits DS8813 - Rev 2 page 8/19

Page 10

4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STD6N62K3 Package information DS8813 - Rev 2 page 9/19

STD6N62K3 Reviews

Average User Rating
5 / 5 (190)
★ ★ ★ ★ ★
5 ★
171
4 ★
19
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Juli*****Parks

June 29, 2020

Completely satisfied of STD6N62K3 , I always find what I need. The site is easy to get the components .

Miri*****line

June 29, 2020

I am satisfied with Heisener company

Brya*****acias

June 14, 2020

Best way to locate what I need, on a fast and efficient shipping! Keep up the good work!

Ayde*****rmon

June 13, 2020

Great kit, cost half the price of other stores. Includes most items that someone would need.

Isa***** Tran

June 11, 2020

Boundless range of products, ease of search and fast delivery continue to impress. Heisener is always my first stop for electronic components.

Kell*****ennedy

June 5, 2020

They work great and I hope to find more used for the extra ones.

Kati*****ench

June 1, 2020

Exactly as listed and arrived very fast, excellent price and service!

Zahr*****mmers

May 29, 2020

Excellent shopping cart process, various of products for selection and order fulfillment a good service quality. I rely on them heavily.

Kol***** Yang

May 24, 2020

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low

Arya*****kins

May 14, 2020

I always enjoy shopping with Heisener, never makes a mistake, most reliable, and no long waiting for deliveries.

STD6N62K3 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

STD6N62K3 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

STD6N62K3 Related Products

CC1210KKX7RGBB106 CC1210KKX7RGBB106 Yageo, CAP CER 10UF 35V X7R 1210, 1210 (3225 Metric), SuperMESH3? View
hotSTF20NF06L STF20NF06L STMicroelectronics, MOSFET N-CH 60V 20A TO-220FP, TO-220-3 Full Pack, SuperMESH3? View
MB90387SPMT-GT-291E1 MB90387SPMT-GT-291E1 Cypress Semiconductor Corp, IC MCU 16BIT 64KB MROM 48LQFP, 48-LQFP, SuperMESH3? View
DSPIC33EP128MC502T-I/SO DSPIC33EP128MC502T-I/SO Microchip Technology, IC MCU 16BIT 128KB FLASH 28SOIC, 28-SOIC (0.295", 7.50mm Width), SuperMESH3? View
LNJ806K5SRX LNJ806K5SRX Panasonic Electronic Components, LED ORANGE DIFFUSED 0805 SMD, 0805 (2012 Metric), SuperMESH3? View
0395237909 0395237909 Molex, LLC, TERM BLOCK PLUG 9POS 270DEG 5MM, -, SuperMESH3? View
DW-40-10-S-D-590 DW-40-10-S-D-590 Samtec Inc., .025" BOARD SPACERS, -, SuperMESH3? View
DW-32-14-G-Q-400 DW-32-14-G-Q-400 Samtec Inc., .025" BOARD SPACERS, -, SuperMESH3? View
D38999/24MC04JD D38999/24MC04JD TE Connectivity Deutsch Connectors, JAM NUT RECEPTACLE, -, SuperMESH3? View
TV06DT-21-41PB-LC TV06DT-21-41PB-LC Amphenol Aerospace Operations, CONN PLUG HSG MALE 41POS INLINE, -, SuperMESH3? View
ACM10DSES-S243 ACM10DSES-S243 Sullins Connector Solutions, CONN EDGE DUAL FMALE 20POS 0.156, -, SuperMESH3? View
STMGFS30243R3-G STMGFS30243R3-G Cosel USA, Inc., VALUED ADDED PS, -, SuperMESH3? View
Payment Methods
Delivery Services

Quick Inquiry

STD6N62K3

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about STD6N62K3?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

STD6N62K3 Tags

  • STD6N62K3
  • STD6N62K3 PDF
  • STD6N62K3 datasheet
  • STD6N62K3 specification
  • STD6N62K3 image
  • STMicroelectronics
  • STMicroelectronics STD6N62K3
  • buy STD6N62K3
  • STD6N62K3 price
  • STD6N62K3 distributor
  • STD6N62K3 supplier
  • STD6N62K3 wholesales

STD6N62K3 is Available in