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STF10N60M2

hot STF10N60M2

STF10N60M2

For Reference Only

Part Number STF10N60M2
Manufacturer STMicroelectronics
Description MOSFET N-CH 600V TO-220FP
Datasheet STF10N60M2 Datasheet
Package TO-220-3 Full Pack
In Stock 2118 piece(s)
Unit Price $ 1.78 *
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STF10N60M2

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STF10N60M2 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STF10N60M2 Datasheet
PackageTO-220-3 Full Pack
SeriesMDmesh? II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25��C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 100V
Vgs (Max)��25V
Power Dissipation (Max)25W (Tc)
Rds On (Max) @ Id, Vgs600 mOhm @ 4A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

STF10N60M2 Datasheet

Page 1

Page 2

March 2017 DocID024712 Rev 4 1/13 This is information on a product in full production. www.st.com STF10N60M2 N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF10N60M2 10N60M2 TO-220FP Tube TO-220FP AM15572v1_no_tab D(2) G(1) S(3)

Page 3

Contents STF10N60M2 2/13 DocID024712 Rev 4 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ...................................................... 10 5 Revision history ............................................................................ 12

Page 4

STF10N60M2 Electrical ratings DocID024712 Rev 4 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID(1) Drain current (continuous) at Tcase = 25 °C 7.5 A Drain current (continuous) at Tcase = 100 °C 4.9 IDM(2) Drain current (pulsed) 30 A PTOT Total dissipation at Tcase = 25 °C 25 W dv/dt(3) Peak diode recovery voltage slope 15 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 VISO(5) Insulation withstand voltage (RMS) from all three leads to external heat sink 2500 V Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1)Limited by package. (2)Pulse limited by safe operating area. (3) ISD ≤ 7.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V (4) VDS ≤ 480 V. (5)t = 1 s; TC = 25 °C. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 1.5 A EAS(2) Single pulse avalanche energy 110 mJ Notes: (1) Pulse width limited by Tjmax. (2) Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

Page 5

Electrical characteristics STF10N60M2 4/13 DocID024712 Rev 4 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, Tcase = 125 °C(1) 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 3 A 0.55 0.60 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 400 - pF Coss Output capacitance - 22 - Crss Reverse transfer capacitance - 0.84 - Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 83 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 6.4 - Ω Qg Total gate charge VDD = 480 V, ID = 7.5 A, VGS = 0 to 10 V (see Figure 15: "Test circuit for gate charge behavior") - 13.5 - nC Qgs Gate-source charge - 2.1 - Qgd Gate-drain charge - 7.2 - Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 3.75 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 8.8 - ns tr Rise time - 8 - td(off) Turn-off delay time - 32.5 - tf Fall time - 13.2 -

Page 6

STF10N60M2 Electrical characteristics DocID024712 Rev 4 5/13 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD(1) Source-drain current - 7.5 A ISDM(2) Source-drain current (pulsed) - 30 A VSD(3) Forward on voltage VGS = 0 V, ISD = 7.5 A - 1.6 V trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 270 ns Qrr Reverse recovery charge - 2 µC IRRM Reverse recovery current - 14.4 A trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 376 ns Qrr Reverse recovery charge - 2.8 µC IRRM Reverse recovery current - 15 A Notes: (1) Limited by package. (2) Pulse width is limited by safe operating area. (3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Page 7

Electrical characteristics STF10N60M2 6/13 DocID024712 Rev 4 2.2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance ID 6 4 2 0 0 10 VDS(V) (A) 5 15 8 4V 5V 6V VGS=7, 8, 9, 10V 20 10 12 14 AM15823v1 ID 4 0 0 4 VGS(V)8 (A) 2 6 8 12 VDS=18V 14 10 2 6 10 AM15824v1 VGS 6 4 2 0 0 Qg(nC) (V) 2 8 10 VDD=480V 300 200 100 0 400 VDS 4 500 VDS (V) ID=7.5A 6 8 10 12 12 AM15825v1

Page 8

STF10N60M2 Electrical characteristics DocID024712 Rev 4 7/13 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics Figure 13: Output capacitance stored energy VGS(th) 0.8 0.7 TJ(°C) (norm) -50 0.9 -25 50 1000 25 75 125 1.0 1.1 ID=250 µA RDS(on) 1.3 1.1 0.9 0.7 TJ(°C) (norm) 0.5 -50 -25 0 25 ID=6.5 A 50 75 100 125 1.5 1.7 1.9 2.1 2.3 2.5 VGS=10V AM15829v1 VSD 0 2 ISD(A) (V) 1 53 4 0 0.2 0.4 0.6 TJ=-50°C TJ=150°C TJ=25°C 0.8 6 7 1 1.2 1.4 AM15830v1

Page 9

Test circuits STF10N60M2 8/13 DocID024712 Rev 4 3 Test circuits Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform

Page 10

STF10N60M2 Package information DocID024712 Rev 4 9/13 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

STF10N60M2 Reviews

Average User Rating
5 / 5 (80)
★ ★ ★ ★ ★
5 ★
72
4 ★
8
3 ★
0
2 ★
0
1 ★
0

Ada C*****ensen

November 18, 2019

I recently became very interested in electronics and I have used several of them. They work great.

Lev*****hosh

September 20, 2019

Great Seller, Great Item, the quality is great, Highly Recommended.

Virg***** Walla

September 19, 2019

I wish I had come across Heisener first, no one could help me for 2 days. You are now saved into the TOP of my favorites web list. Thank you very much.

Caro***** Kara

July 7, 2019

Works just like the original one and even has the correct connectors installed.

Han*****ilcox

March 20, 2019

Most of the reviews for this product were positive so I took a chance.

Kynl*****orrow

March 16, 2019

The prices are very competitive, I've had a few transactions lately and all were smooth as glass. I'm a very satisfied customer!

Cel***** Shaw

February 22, 2019

All of the components worked, and are still working. So even though the price is amazingly low, the diodes really do work!

Jol*****Henry

August 18, 2018

Sure appreciate your service high standard, expertise and skills. Thanks Much!!!

Aleja*****Watkins

June 30, 2018

Fantastic Quality Control and Great Selection. Heisener Electronics has became to my No.1 Supplier for many years.

Spen*****Arroyo

May 28, 2018

Wow super fast delivery, product as described good company!

STF10N60M2 Guarantees

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