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STF11NM80

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STF11NM80

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Part Number STF11NM80
Manufacturer STMicroelectronics
Description MOSFET N-CH 800V 11A TO220FP
Datasheet STF11NM80 Datasheet
Package TO-220-3 Full Pack
In Stock 97,612 piece(s)
Unit Price $ 6.1200 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 1 - Jun 6 (Choose Expedited Shipping)
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Part Number # STF11NM80 (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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STF11NM80 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STF11NM80Datasheet
PackageTO-220-3 Full Pack
SeriesMDmesh?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1630pF @ 25V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)35W (Tc)
Rds On (Max) @ Id, Vgs400 mOhm @ 5.5A, 10V
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

STF11NM80 Datasheet

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September 2011 Doc ID 9241 Rev 11 1/22 22 STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 800 V < 0.40 Ω 14Ω*nC 11 A STF11NM80 STI11NM80 STP11NM80 STW11NM80 TO-247 D²PAK TO-220 TO-220FP 1 2 3 1 3 1 2 3 1 2 3 I²PAK 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 D²PAK Tape and reel STF11NM80 F11NM80 TO-220FP Tube STI11NM80 I11NM80 I²PAK STP11NM80 P11NM80 TO-220 STW11NM80 W11NM80 TO-247 www.st.com

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Contents STB/F/I/P/W11NM80 2/22 Doc ID 9241 Rev 11 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

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STB/F/I/P/W11NM80 Electrical ratings Doc ID 9241 Rev 11 3/22 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit D²PAK, I²PAK TO-220, TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 800 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 11 11 (1) 1. Limited only by the maximum temperature allowed A ID Drain current (continuous) at TC=100 °C 8 8 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 44 44 (1) A PTOT Total dissipation at TC = 25 °C 150 35 W Derating factor 1.2 0.28 W/°C VISO Insulation withstand voltage (DC) 2500 V TJ Tstg Operating junction temperature Storage temperature -65 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit D²PAK TO-220FP I²PAK TO-220 TO-247 Rthj-case Thermal resistance junction-case max 0.83 3.6 0.83 °C/W Rthj-a Thermal resistance junction- ambient max 62.5 50 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 board, 2 oz Cu Thermal resistance junction-pcb max 30 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 400 mJ

Page 5

Electrical characteristics STB/F/I/P/W11NM80 4/22 Doc ID 9241 Rev 11 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS = 0) ID = 250 µA 800 V dv/dt (1) 1. Characteristic value at turn off on inductive load Drain source voltage slope VDD = 640 V, ID = 11 A, VGS = 10 V 30 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = 800 V, VDS = 800 V @125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±30 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5.5 A 0.35 0.40 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS > ID(on) x RDS(on)max, ID= 7.5 A - 8 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 1630 750 30 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640 V, ID = 11 A VGS =10 V (see Figure 18) - 43.6 11.6 21 - nC nC nC Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain - 2.7 - Ω td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=400 V, ID= 5.5 A, RG=4.7 Ω, VGS=10 V (see Figure 17) - 22 17 46 15 - ns ns ns ns

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STB/F/I/P/W11NM80 Electrical characteristics Doc ID 9241 Rev 11 5/22 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 11 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 44 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=11 A, VGS=0 - 0.86 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD= 50 V - 612 7.22 23.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD= 50 V, Tj=150 °C - 970 11.25 23.2 ns µC A

Page 7

Electrical characteristics STB/F/I/P/W11NM80 6/22 Doc ID 9241 Rev 11 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK, I²PAK, TO-220, TO-247 Figure 3. Thermal impedance for D²PAK, I²PAK, TO-220, TO-247 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Output characteristics @ TJ=150 °C ID 10 1 0.1 0.1 1 100 VDS(V)10 (A) O pe ra tio n in th is a re a is Li m ite d by m ax R D S (o n) 10µs 100µs 1ms 10ms 1µs Tj=150°C Tc=25°C Sinlge pulse AM03328v1 ID 10 1 0.1 0.1 1 100 VDS(V)10 (A) O pe ra tio n in th is a re a is Li m ite d by m ax R D S (o n) 10µs 100µs 1ms 10ms 1µs Tj=150°C Tc=25°C Sinlge pulse 0.01 AM03329v1

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STB/F/I/P/W11NM80 Electrical characteristics Doc ID 9241 Rev 11 7/22 Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Static drain-source on resistance

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Electrical characteristics STB/F/I/P/W11NM80 8/22 Doc ID 9241 Rev 11 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized on resistance vs temperature Figure 16. Normalized BVDSS vs temperature

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STB/F/I/P/W11NM80 Test circuits Doc ID 9241 Rev 11 9/22 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47kΩ 1kΩ 47kΩ 2.7kΩ 1kΩ 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01472v1 V(BR)DSS VDDVDD VD IDM ID AM01473v1 VDS ton tdon tdoff toff tftr 90% 10% 10% 0 0 90% 90% 10% VGS

STF11NM80 Reviews

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Kat*****Krish

May 19, 2020

Very friendly online shopping site - easy to navigate and it keeps vital datasheet for each product online purchase.

Yamile*****ughese

May 13, 2020

Very good product for electronic projects and are of great quality and test great.

Nix*****Klein

May 12, 2020

Great product at a good price. No complaints.

Natas*****kherjee

April 28, 2020

Quality electronic components plus fast response.Thank you.

Raul*****ajas

April 17, 2020

Most of the reviews for this product were positive so I took a chance.

Wade*****gess

April 16, 2020

It's so nice to have all these babies. I was using so many for projects, I decided to buy these. They'll definitely last me a while!

Coe*****yers

April 11, 2020

They worked as I expected. I'll definitely purchase again. Thank you!

Daws*****arlson

April 6, 2020

Received Quickly. Excellent Communication. Capacitors Look Excellent.

Kan*****ash

April 5, 2020

A well designed product that fit my custom PCB's perfectly. Easy to use. Sturdy construction. Highly recommend to all PCB builders.

Sao*****e Dar

April 5, 2020

As I said before, your crew rock's keep up the fantastic work as we need you out there.

STF11NM80 Guarantees

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