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STN2NE10

hot STN2NE10

STN2NE10

For Reference Only

Part Number STN2NE10
Manufacturer STMicroelectronics
Description MOSFET N-CH 100V 2A SOT-223
Datasheet STN2NE10 Datasheet
Package TO-261-4, TO-261AA
In Stock 46130 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Feb 24 - Feb 29 (Choose Expedited Shipping)
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STN2NE10

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  • To learn about the specification of STN2NE10, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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STN2NE10 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STN2NE10 Datasheet
PackageTO-261-4, TO-261AA
SeriesSTripFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25��C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds305pF @ 25V
Vgs (Max)��20V
Power Dissipation (Max)2.5W (Tc)
Rds On (Max) @ Id, Vgs400 mOhm @ 1A, 10V
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

STN2NE10 Datasheet

Page 1

Page 2

STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA ■ TYPICAL RDS(on) = 0.33 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 % AVALANCHE TESTED ■ APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size " stip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES,etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STN2NE10 100 V < 0.4 Ω 2 A January 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC 2 A ID Drain Current (continuous) at Tc = 100 oC 1.3 A IDM(•) Drain Current (pulsed) 8 A Ptot Total Dissipation at Tc = 25 oC 2.5 W Derating Factor 0.02 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C (•) Pulse width limited by safe operating area (1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX New RDS (on) spec. starting from JULY 98 1 2 2 3 SOT-223 1/5 Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 3

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) THERMAL DATA Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 50 60 260 o C/W oC/W o C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 2 A EAS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR, VDD = 25 V) 20 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating Tc = 125 o C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 1A 0.33 0.4 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 2 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance VDS > ID(on) x RDS(on)max ID = 1 A 1 1.8 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 V 305 45 21 pF pF pF STN2NE10 2/5

Page 4

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V ID = 35 A RG = 4.7 Ω VGS = 10 V (Resistive Load, see fig. 3) 7 17 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 80 V ID = 7 A VGS = 10 V 14 6 4 19 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(of f) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 3.5 A RG =4.7 Ω VGS = 10 V (Resistive Load, see fig. 3) 25 7 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 16 V ID = 80 A RG = 4.7 Ω VGS = 10 V (Inductive Load, see fig. 5) 7 8 16 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM(•) Source-drain Current Source-drain Current (pulsed) 2 8 A A VSD (∗) Forward On Voltage ISD = 2 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A di/dt = 100 A/µs VDD = 30 V (see test circuit, fig. 5) 75 210 5.5 ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STN2NE10 3/5

Page 5

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) DIM. mm mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 C CB E L a b e 1 l1 f g c d l2 e4 P008B SOT-223 MECHANICAL DATA STN2NE10 4/5

STN2NE10 Reviews

Average User Rating
5 / 5 (108)
★ ★ ★ ★ ★
5 ★
97
4 ★
11
3 ★
0
2 ★
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0

Avia*****ordova

November 4, 2019

Awesome selection for all electronic parts here! Great service when it is needed too! Prices are competitive as well. Thank you!

Patr*****Gour

October 5, 2019

Quality electronic components plus fast response.Thank you.

Natal*****farland

September 28, 2019

They work great and I hope to find more used for the extra ones.

Cana*****ahoney

June 6, 2019

The are the right size and type and do what they are designed to do.

Bryc*****amirez

May 21, 2019

Very user friendly to find part and specs. Easy to deal with the transaction for different payment types. Thanks!

Call*****hand

March 21, 2019

Those components that were in stock shipped fast and arrived promptly.

Erne*****Obrien

December 29, 2018

I had no problems with this product. Would I recommend it. Yes.

Zay*****ejia

December 23, 2018

Heisener has been the best in this industry for many years. Very quick and easy if you know what you are looking for. if you don't know exactly what you are looking for, you are going to be lost.

Lu***** Ram

September 13, 2018

They are great as I need, I give 5 stars.

Jilli*****varado

July 9, 2018

I like doing business with Heisener. Get all the items I want. The website is well organized, intuitive, works correctly and pages load quickly. Well done!

STN2NE10 Guarantees

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

STN2NE10 Packaging

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