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STPS20170CT

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STPS20170CT

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Part Number STPS20170CT
Manufacturer STMicroelectronics
Description DIODE ARRAY SCHOTTKY 170V TO220
Datasheet STPS20170CT Datasheet
Package TO-220-3
In Stock 1,436 piece(s)
Unit Price $ 2.6400 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 30 - Feb 4 (Choose Expedited Shipping)
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Part Number # STPS20170CT (Diodes - Rectifiers - Arrays) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For STPS20170CT specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add STPS20170CT with quantity into BOM. Heisener.com does NOT require any registration to request a quote of STPS20170CT.

STPS20170CT Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Diodes - Rectifiers - Arrays
Datasheet STPS20170CTDatasheet
PackageTO-220-3
Series-
Diode Configuration1 Pair Common Cathode
Diode TypeSchottky
Voltage - DC Reverse (Vr) (Max)170V
Current - Average Rectified (Io) (per Diode)10A
Voltage - Forward (Vf) (Max) @ If900mV @ 10A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr15µA @ 170V
Operating Temperature - Junction175°C (Max)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

STPS20170CT Datasheet

Page 1

Page 2

October 2016 DocID10243 Rev 3 1/15 This is information on a product in full production. www.st.com STPS20170C High voltage power Schottky rectifier Datasheet - production data Features  High reverse voltage  High junction temperature capability  Avalanche specification with derating curves  Insulated package TO-220FPAB  Insulating voltage: 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand Benefits  Can challenge bipolar ultrafast diodes with better dynamic characteristics Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Table 1: Device summary Symbol Value IF(AV) 2 x 10 A VRRM 170 V Tj (max.) 175 °C VF (typ.) 0.69 V A1 K A2 A1 K A2 TO-220AB K A1 K A2 TO-220FPAB K K A1 A1 A2 A2 D²PAK

Page 3

Characteristics STPS20170C 2/15 DocID10243 Rev 3 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5, square wave TO-220AB / D²PAK TC = 155 °C Per diode 10 A TC = 150 °C Total 20 TO-220FPAB TC = 135 °C Per diode 10 TC = 115 °C Total 20 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 480 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature (1) 175 Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-c) Junction to case TO-220AB / D²PAK Per diode 2.2 °C/W Total 1.3 TO-220FPAB Per diode 4.5 Total 3.5 Rth(c) Coupling TO-220AB / D²PAK 0.3 TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Page 4

STPS20170C Characteristics DocID10243 Rev 3 3/15 Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 15 µA Tj = 125 °C - 15 mA VF(2) Forward voltage drop Tj = 25 °C IF = 10 A - 0.90 V Tj = 125 °C - 0.69 0.75 Tj = 25 °C IF = 20 A - 0.99 Tj = 125 °C - 0.79 0.86 Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.64 x IF(AV) + 0.011 x IF2(RMS)

Page 5

Characteristics STPS20170C 4/15 DocID10243 Rev 3 1.1 Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) Figure 3: Normalized avalanche power derating versus pulse duration (Tj = 125 °C) Figure 4: Relative variation of thermal impedance junction to case versus pulse duration Figure 5: Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 6: Junction capacitance versus reverse voltage applied (typical values, per diode) 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 I (A )F (AV) T = tp/T tp = 0.05 = 0.1 = 0.2 = 0.5 = 1 δ δ δδδ δ PF(AV)(W) 0 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175 T (°C)amb T = tp/T tp R =15°C/Wth(j-a) R =Rth(j-a) th(j-c) (TO-220FPAB ) R =Rth(j-a) th(j-c) (TO-220AB and D²PAK) δ IF(AV)(A) P (tp) P (10 µs) ARM ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs)p 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E- 03 1.E- 02 1.E- 01 1.E+ 00 t ( s )p T = tp/T tp TO-220FPAB TO-220AB and D²PAK Single pulse δ Zth(j-c)/Rth(j-c) 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03 1.E +04 1.E +05 0 25 50 75 100 125 150 175 V (V )R T = 175 °Cj T = 150 °Cj T = 125 °Cj T = 100 °Cj T = 25 °Cj IR(µA) 10 100 1000 1 10 100 1000 V (V )R C(pF) F = 1 MHz V OSC = 30 mV RMS T j = 25 °C

Page 6

STPS20170C Characteristics DocID10243 Rev 3 5/15 Figure 7: Forward voltage drop versus forward current (per diode) Figure 8: Thermal resistance junction to ambient versus copper surface under tab for D²PAK 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 SCu(cm²) Rth(j-a) (°C/W) Epoxy printed board FR4, eCU= 35 µm

Page 7

Package information STPS20170C 6/15 DocID10243 Rev 3 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.  Cooling method: by conduction (C)  Epoxy meets UL 94,V0  Recommended torque value: 0.55 N·m (for TO-220AB and TO-220FPAB)  Maximum torque value: 0.7 N·m (for TO-220AB and TO-220FPAB)

Page 8

STPS20170C Package information DocID10243 Rev 3 7/15 2.1 D²PAK package information Figure 9: D²PAK package outline This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed.

Page 9

Package information STPS20170C 8/15 DocID10243 Rev 3 Table 5: D²PAK package mechanical data Ref. Dimensions Millimeters Inches Min. Max. Min. Max. A 4.36 4.60 0.172 0.181 A1 0.00 0.25 0.000 0.010 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.38 0.69 0.015 0.027 c2 1.19 1.36 0.047 0.053 D 8.60 9.35 0.339 0.368 D1 6.90 8.00 0.272 0.311 D2 1.10 1.50 0.043 0.060 E 10.00 10.55 0.394 0.415 E1 8.10 8.90 0.319 0.346 E2 6.85 7.25 0.266 0.282 e 2.54 typ. 0.100 e1 4.88 5.28 0.190 0.205 H 15.00 15.85 0.591 0.624 J1 2.49 2.90 0.097 0.112 L 1.90 2.79 0.075 0.110 L1 1.27 1.65 0.049 0.065 L2 1.30 1.78 0.050 0.070 R 0.4 typ. 0.015 V2 0° 8° 0° 8°

Page 10

STPS20170C Package information DocID10243 Rev 3 9/15 Figure 10: D²PAK recommended footprint (dimensions in mm)

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