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STT3PF30L

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STT3PF30L

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Part Number STT3PF30L
Manufacturer STMicroelectronics
Description MOSFET P-CH 30V 2.4A SOT23-6
Datasheet STT3PF30L Datasheet
Package SOT-23-6
In Stock 110,162 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 7 - Dec 12 (Choose Expedited Shipping)
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Part Number # STT3PF30L (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For STT3PF30L specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add STT3PF30L with quantity into BOM. Heisener.com does NOT require any registration to request a quote of STT3PF30L.

STT3PF30L Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STT3PF30LDatasheet
PackageSOT-23-6
SeriesSTripFET? II
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 25V
Vgs (Max)��16V
FET Feature-
Power Dissipation (Max)1.6W (Tc)
Rds On (Max) @ Id, Vgs165 mOhm @ 1.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

STT3PF30L Datasheet

Page 1

Page 2

1/8September 2002 . STT3PF30L P-CHANNEL 30V - 0.14 Ω - 3A SOT23-6L STripFET™ II POWER MOSFET ■ TYPICAL RDS(on) = 0.14 Ω ■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ■ LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ■ CELLULAR MARKING ■ STA3 TYPE VDSS RDS(on) ID STT3PF30L 30 V <0.165 Ω 3 A SOT23-6L ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 2.4 A ID Drain Current (continuous) at TC = 100°C 1.5 A IDM(•) Drain Current (pulsed) 10 A Ptot Total Dissipation at TC = 25°C 1.6 W INTERNAL SCHEMATIC DIAGRAM Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 3

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT3PF30L 2/8 THERMAL DATA (*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board (**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-amb Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient (**)Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max Max 78 156 -55 to 150 -55 to 150 °C/W °C/W °C °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 1.6 2.5 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 1.5 A VGS = 4.5 V ID = 1.5 A 0.14 0.16 0.165 0.2 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS=25 V ID = 1.5 A 4 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz, VGS = 0 420 95 30 pF pF pF

Page 4

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 3/8 STT3PF30L SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 1.5 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 14.5 37 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24V ID= 3A VGS=4.5V (see test circuit, Figure 2) 4.8 1.7 2 7 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V ID = 1.5 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 90 23 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 3 12 A A VSD (*) Forward On Voltage ISD = 3 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A di/dt = 100A/µs VDD = 15 V Tj = 150°C (see test circuit, Figure 3) 35 25 1.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

Page 5

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT3PF30L 4/8 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

Page 6

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 5/8 STT3PF30L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics

Page 7

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT3PF30L 6/8 Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour Fig. 1: Switching Times Test Circuits For Resistive Load

Page 8

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 7/8 STT3PF30L DIM. mm mils MIN. TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 A1 b e e1 c E L D E1 SOT23-6L MECHANICAL DATA

STT3PF30L Reviews

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Kars*****oody

November 13, 2020

Every time I order, I get it correctly filled and faster than most of website. For a friendly use operate system, you guys are the best!

Sel*****Jain

November 12, 2020

fast delivery and good product, very happy

Rex*****vila

November 12, 2020

Competitive prices, fast/cheap shipping, easy find my desired items, powerful online business what I need to do are a few clicks!

Shep*****Sutton

November 2, 2020

Quality electronic components plus fast response.Thank you.

Sus*****Mack

October 28, 2020

Very happy for the fast shipping and good price!

Thiag*****inguez

October 21, 2020

Item is as described and very good postage time. Thank you.

Amar*****ntley

October 20, 2020

good item, quick delivery, prefer to recommended.

Lou*****Vyas

October 19, 2020

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low

Axe*****arron

October 13, 2020

To be honest, I think you are doing an outstanding job.

STT3PF30L Guarantees

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Our experienced sales team and tech support team back our services to satisfy all our customers.

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

STT3PF30L Packaging

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