0
+86-755-83210559 ext. 811
TOP
Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811
Language Translation
  • • English
  • • Español
  • • Deutsch
  • • Français
  • • Italiano
  • • Nederlands
  • • Português
  • • русский язык
  • • 日本語
  • • 한국어
  • • 简体中文
  • • 繁體中文

* Please refer to the English Version as our Official Version.

Change Country

If your country is not listed, please select International as your region.

  • International
Americas
  • Argentina
  • Brasil
  • Canada
  • Chile
  • Colombia
  • Costa Rica
  • Dominican Republic
  • Ecuador
  • Guatemala
  • Honduras
  • Mexico
  • Peru
  • Puerto Rico
  • United States
  • Uruguay
  • Venezuela
Asia/Pacific
  • Australia
  • China
  • Hong Kong
  • Indonesia
  • Israel
  • India
  • Japan
  • Korea, Republic of
  • Malaysia
  • New Zealand
  • Philippines
  • Singapore
  • Thailand
  • Taiwan
  • Vietnam
Europe
  • Austria
  • Belgium
  • Bulgaria
  • Switzerland
  • Czech Republic
  • Germany
  • Denmark
  • Estonia
  • Spain
  • Finland
  • France
  • United Kingdom
  • Greece
  • Croatia
  • Hungary
  • Ireland
  • Italy
  • Netherlands
  • Norway
  • Poland
  • Portugal
  • Romania
  • Russian Federation
  • Sweden
  • Slovakia
  • Turkey

STT4PF20V

hot STT4PF20V

STT4PF20V

For Reference Only

Part Number STT4PF20V
Manufacturer STMicroelectronics
Description MOSFET P-CH 20V 3A SOT-23-6
Datasheet STT4PF20V Datasheet
Package SOT-23-6
In Stock 125840 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 21 - Jan 26 (Choose Expedited Shipping)
Winter Hot Sale

* Free Shipping * Up to $100 Discount

Winter Hot Sale

Request for Quotation

STT4PF20V

Quantity
  • We are offering STT4PF20V for competitive price in the global market, please send us a quota request for pricing. Thank you!
  • To process your RFQ, please add STT4PF20V with quantity into BOM. Heisener.com does NOT require any registration to request a quote of STT4PF20V.
  • To learn about the specification of STT4PF20V, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
Payment Methods
Delivery Services

Do you have any question about STT4PF20V?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

STT4PF20V Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STT4PF20V Datasheet
PackageSOT-23-6
SeriesSTripFET? II
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25��C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V
Vgs (Max)��10V
Power Dissipation (Max)1.6W (Tc)
Rds On (Max) @ Id, Vgs110 mOhm @ 1.5A, 4.5V
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

STT4PF20V Datasheet

Page 1

Page 2

1/8May 2003 . STT4PF20V P-CHANNEL 20V - 0.090 Ω - 3A SOT23-6L 2.7V-DRIVE STripFET™ II POWER MOSFET ■ TYPICAL RDS(on) = 0.090 Ω @ 4.5 V ■ TYPICAL RDS(on) = 0.100 Ω @ 2.7 V ■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) ■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS ■ MOBILE PHONE APPLICATIONS ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT TYPE VDSS RDS(on) ID STT4PF20V 20 V < 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V ) 3 A SOT23-6L ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 20 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 20 V VGS Gate- source Voltage ± 10 V ID Drain Current (continuous) at TC = 25°C 3 A ID Drain Current (continuous) at TC = 100°C 1.9 A IDM(•) Drain Current (pulsed) 12 A Ptot Total Dissipation at TC = 25°C 1.6 W INTERNAL SCHEMATIC DIAGRAM Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 3

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT4PF20V 2/8 THERMAL DATA (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature storage temperature Max 78 150 -55 to 150 °C/W °C °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 20 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 10V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 0.6 V RDS(on) Static Drain-source On Resistance VGS = 4.5 V ID = 1.5 A VGS = 2.7 V ID = 1.5 A 0.090 0.100 0.110 0.135 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS=15V ID=1.5 A 6.5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, f = 1 MHz, VGS = 0 500 140 30 pF pF pF

Page 4

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 3/8 STT4PF20V SWITCHING ON(*) SWITCHING OFF(*) SOURCE DRAIN DIODE(*) (*)Pulse width [ 300 µs, duty cycle 1.5 %. (•)Pulse width limited by TJMAX Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 10 V ID = 1.5 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 38 39 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 10V ID= 3A VGS=4.5V (see test circuit, Figure 2) 5.8 1 1.4 7.8 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 10 V ID = 1.5 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 54 12 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 3 12 A A VSD (*) Forward On Voltage ISD = 3 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A di/dt = 100A/µs VDD = 15 V Tj = 150°C (Inductive Load, Figure 3) 20 13 1.3 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

Page 5

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT4PF20V 4/8 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

Page 6

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 5/8 STT4PF20V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . .

Page 7

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT4PF20V 6/8 Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour Fig. 1: Switching Times Test Circuits For Resistive Load

Page 8

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 7/8 STT4PF20V DIM. mm mils MIN. TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 A1 b e e1 c E L D E1 SOT23-6L MECHANICAL DATA

STT4PF20V Reviews

Average User Rating
5 / 5 (79)
★ ★ ★ ★ ★
5 ★
71
4 ★
8
3 ★
0
2 ★
0
1 ★
0

Eva*****xit

November 12, 2019

Wish there were some documentation but I guess if you're buying you kinda should know.

Jerem*****ullins

November 2, 2019

Excellent service over extended period of time. Incredibly fast shipping, never any errors. Couldn't be more pleased.

Ava *****well

July 20, 2019

Great capacitors. very fast post very good communication.

Mad***** De

May 27, 2019

Very easy to co-operate with; they take care of orders promptly.

Mae *****llough

April 13, 2019

Awesome!!! great prices, easy to order and great service, thank you!

Evang***** Walls

February 17, 2019

To be honest, I think you are doing an outstanding job.

Luke*****rano

January 29, 2019

The are the right size and type and do what they are designed to do.

Tins*****Paul

December 17, 2018

Best way to locate what I need, on a fast and efficient shipping! Keep up the good work!

Kei*****Ellis

June 25, 2018

DELIVERY AND COMMUNICATION EXTRA SELLER TOP 5 STARS on my list

Shil*****iggins

June 18, 2018

You're my good supplier. I appreciate Heisener Electronics on many levels.

STT4PF20V Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

STT4PF20V Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

STT4PF20V Related Products

hotSTT4PF20V STB85NF3LLT4 STMicroelectronics, MOSFET N-CH 30V 85A D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, STripFET? II View
hotSTT4PF20V STV240N75F3 STMicroelectronics, MOSFET N-CH 75V 240A POWERSO-10, PowerSO-10 Exposed Bottom Pad, STripFET? II View
hotSTT4PF20V STTH1210FP STMicroelectronics, DIODE GEN PURP 1KV 12A TO220FP, TO-220-2 Full Pack, STripFET? II View
hotSTT4PF20V STTA806G STMicroelectronics, DIODE GEN PURP 600V 8A D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, STripFET? II View
hotSTT4PF20V STTA406 STMicroelectronics, DIODE GEN PURP 600V 4A DO201AD, DO-201AD, Axial, STripFET? II View
hotSTT4PF20V STTH15L06G STMicroelectronics, DIODE GEN PURP 600V 20A D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, STripFET? II View
hotSTT4PF20V STTH5L06D STMicroelectronics, DIODE GEN PURP 600V 5A TO220AC, TO-220-2, STripFET? II View
hotSTT4PF20V STTH5L04DEE-TR STMicroelectronics, DIODE GEN PURP 400V 5A POWERFLAT, 8-PowerVDFN, STripFET? II View
hotSTT4PF20V STTH3R06UFY STMicroelectronics, DIODE GEN PURP 600V 3A SMBFLAT, DO-214AA, SMB, STripFET? II View
hotSTT4PF20V STTH302 STMicroelectronics, DIODE GEN PURP 200V 3A DO201AD, DO-201AD, Axial, STripFET? II View
hotSTT4PF20V STTH1L06 STMicroelectronics, DIODE GEN PURP 600V 1A DO41, DO-204AL, DO-41, Axial, STripFET? II View
hotSTT4PF20V STTH112RL STMicroelectronics, DIODE GEN PURP 1.2KV 1A DO41, DO-204AL, DO-41, Axial, STripFET? II View

STT4PF20V Tags

  • STT4PF20V
  • STT4PF20V PDF
  • STT4PF20V datasheet
  • STT4PF20V specification
  • STT4PF20V image
  • STMicroelectronics
  • STMicroelectronics STT4PF20V
  • buy STT4PF20V
  • STT4PF20V price
  • STT4PF20V distributor
  • STT4PF20V supplier
  • STT4PF20V wholesales

STT4PF20V is Available in