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Part Number STT4PF20V
Manufacturer STMicroelectronics
Description MOSFET P-CH 20V 3A SOT-23-6
Datasheet STT4PF20V Datasheet
Package SOT-23-6
In Stock 125,840 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 11 - Aug 16 (Choose Expedited Shipping)
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Part Number # STT4PF20V (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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STT4PF20V Specifications

CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STT4PF20VDatasheet
SeriesSTripFET? II
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V
Vgs (Max)��10V
FET Feature-
Power Dissipation (Max)1.6W (Tc)
Rds On (Max) @ Id, Vgs110 mOhm @ 1.5A, 4.5V
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

STT4PF20V Datasheet

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Page 2

1/8May 2003 . STT4PF20V P-CHANNEL 20V - 0.090 Ω - 3A SOT23-6L 2.7V-DRIVE STripFET™ II POWER MOSFET ■ TYPICAL RDS(on) = 0.090 Ω @ 4.5 V ■ TYPICAL RDS(on) = 0.100 Ω @ 2.7 V ■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) ■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS ■ MOBILE PHONE APPLICATIONS ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT TYPE VDSS RDS(on) ID STT4PF20V 20 V < 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V ) 3 A SOT23-6L ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 20 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 20 V VGS Gate- source Voltage ± 10 V ID Drain Current (continuous) at TC = 25°C 3 A ID Drain Current (continuous) at TC = 100°C 1.9 A IDM(•) Drain Current (pulsed) 12 A Ptot Total Dissipation at TC = 25°C 1.6 W INTERNAL SCHEMATIC DIAGRAM Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 3

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT4PF20V 2/8 THERMAL DATA (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature storage temperature Max 78 150 -55 to 150 °C/W °C °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 20 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 10V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 0.6 V RDS(on) Static Drain-source On Resistance VGS = 4.5 V ID = 1.5 A VGS = 2.7 V ID = 1.5 A 0.090 0.100 0.110 0.135 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS=15V ID=1.5 A 6.5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, f = 1 MHz, VGS = 0 500 140 30 pF pF pF

Page 4

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 3/8 STT4PF20V SWITCHING ON(*) SWITCHING OFF(*) SOURCE DRAIN DIODE(*) (*)Pulse width [ 300 µs, duty cycle 1.5 %. (•)Pulse width limited by TJMAX Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 10 V ID = 1.5 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 38 39 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 10V ID= 3A VGS=4.5V (see test circuit, Figure 2) 5.8 1 1.4 7.8 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 10 V ID = 1.5 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 54 12 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 3 12 A A VSD (*) Forward On Voltage ISD = 3 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A di/dt = 100A/µs VDD = 15 V Tj = 150°C (Inductive Load, Figure 3) 20 13 1.3 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

Page 5

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT4PF20V 4/8 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

Page 6

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 5/8 STT4PF20V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . .

Page 7

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) STT4PF20V 6/8 Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour Fig. 1: Switching Times Test Circuits For Resistive Load

Page 8

Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s) 7/8 STT4PF20V DIM. mm mils MIN. TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 A1 b e e1 c E L D E1 SOT23-6L MECHANICAL DATA

STT4PF20V Reviews

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July 17, 2020

Diodes okay. Shipped quick and received with well - packed


July 8, 2020

Sure appreciate your service high standard, expertise and skills. Thanks Much!!!


June 30, 2020

The order process is easy and user friendly, very helpful customer service, always fast shipping.


June 27, 2020

I tested some and all look good.


June 17, 2020

Exactly as listed and arrived very fast, excellent price and service!


June 9, 2020

So far all the items still work. I'm using these for some home made solar panels and they're doing great.


June 5, 2020

Great kit, cost half the price of other stores. Includes most items that someone would need.


June 4, 2020

quick delivery, received with well packaged, exactly as listed - Thanks


June 2, 2020

Boundless range of products, ease of search and fast delivery continue to impress. Heisener is always my first stop for electronic components.

Caro***** Hines

June 2, 2020

received with well packed and good parts, every piece of the STT4PF20V works well.

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