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STY60NM50

hot STY60NM50

STY60NM50

For Reference Only

Part Number STY60NM50
Heisener # H299-STY60NM50
Manufacturer STMicroelectronics
Description MOSFET N-CH 500V 60A MAX247
Datasheet STY60NM50 Datasheet
Package TO-247-3
In Stock 1211
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Apr 28 - May 3 (Choose Expedited Shipping)

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STY60NM50

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STY60NM50 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STY60NM50 Datasheet
PackageTO-247-3
SeriesMDmesh?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs266nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
Power Dissipation (Max)560W (Tc)
Rds On (Max) @ Id, Vgs50 mOhm @ 30A, 10V
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageMAX247™
Package / CaseTO-247-3

STY60NM50 Datasheet

STY60NM50 Related Products

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hotSTY60NM50 STY145N65M5 STMicroelectronics, MOSFET N-CH 650V 138A MAX247, Package:TO-247-3, Series:MDmesh? , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):500V, Current - Continuous Drain (Id) @ 25°C:60A (Tc), Drive Voltage (Max Rds On, Min Rds On):10V, Vgs(th) (Max) @ Id:5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:266nC @ 10V, Vgs (Max):±30V, Input Capacitance (Ciss) (Max) @ Vds:7500pF @ 25V, Power Dissipation (Max):560W (Tc), Rds On (Max) @ Id, Vgs:50 mOhm @ 30A, 10V, Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Supplier Device Package:MAX247™, Package / Case:TO-247-3

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