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SUD09P10-195-GE3

hot SUD09P10-195-GE3

SUD09P10-195-GE3

For Reference Only

Part Number SUD09P10-195-GE3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 100V 8.8A DPAK
Datasheet SUD09P10-195-GE3 Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 89854 piece(s)
Unit Price $ 0.385 *
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SUD09P10-195-GE3

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SUD09P10-195-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SUD09P10-195-GE3 Datasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesTrenchFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25��C8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1055pF @ 50V
Vgs (Max)��20V
Power Dissipation (Max)2.5W (Ta), 32.1W (Tc)
Rds On (Max) @ Id, Vgs195 mOhm @ 3.6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

SUD09P10-195-GE3 Datasheet

Page 1

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Vishay Siliconix SUD09P10-195 Document Number: 65903 S10-0634-Rev. A, 22-Mar-10 www.vishay.com 1 P-Channel 100 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • DC/DC Converters PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) - 100 0.195 at VGS = - 10 V - 8.8 11.7 0.210 at VGS = - 4.5 V - 8.5 TO-252 SG D Top View Drain Connected to Tab Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 8.8 A TC = 70 °C - 7.1 Pulsed Drain Current IDM - 15 Avalanche Current IAS - 18 Single Avalanche Energya L = 0.1 mH EAS 16.2 mJ Maximum Power Dissipationa TC = 25 °C PD 32.1b W TA = 25 °C c 2.5 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 3.9

Page 3

www.vishay.com 2 Document Number: 65903 S10-0634-Rev. A, 22-Mar-10 Vishay Siliconix SUD09P10-195 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - 1 µAVDS = - 100 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 250 On-State Drain Currenta ID(on) VDS ≤ - 10 V, VGS = - 10 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 3.6 A 0.162 0.195 Ω VGS = - 4.5 V, ID = - 3.4 A 0.175 0.210 Forward Transconductancea gfs VDS = - 15 V, ID = - 3.6 A 12 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 50 V, f = 1 MHz 1055 pFOutput Capacitance Coss 65 Reverse Transfer Capacitance Crss 41 Total Gate Chargec Qg VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A 23.2 34.8 nC VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A 11.7 17.6 Gate-Source Chargec Qgs 3.5 Gate-Drain Chargec Qgd 4.8 Gate Resistance Rg f = 1 MHz 1.2 5.7 11.5 Ω Turn-On Delay Timec td(on) VDD = - 50 V, RL = 17.2 Ω ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 7 14 ns Rise Timec tr 12 18 Turn-Off Delay Timec td(off) 33 50 Fall Timec tf 9 18 Drain-Source Body Diode Ratings and Characteristics TC = 25 °C b Continuous Current IS - 8.8 A Pulsed Current ISM - 15 Forward Voltagea VSD IF = - 2.9 A, VGS = 0 V - 0.8 - 1.5 V Reverse Recovery Time trr IF = - 2.9 A, dI/dt = 100 A/µs 50 75 ns Peak Reverse Recovery Current IRM(REC) - 4 - 6 A Reverse Recovery Charge Qrr 98 147 nC

Page 4

Vishay Siliconix SUD09P10-195 Document Number: 65903 S10-0634-Rev. A, 22-Mar-10 www.vishay.com 3 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics Transfer Characteristics Transconductance 0 3 6 9 12 15 0 1 2 3 4 VGS = 10 V thru 5 V VGS = 4 V VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D VGS = 3 V 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D 0 5 10 15 20 25 0 3 6 9 12 15 ID - Drain Current (A) - T ra n s c o n d u c ta n c e (S ) g fs TC = 125 °C TC = - 55 °C TC = 25 °C On-Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.10 0.15 0.20 0.25 0.30 0 3 6 9 12 15 VGS = 4.5 V VGS = 10 V - O n -R e s is ta n c e (Ω ) R D S (o n ) ID - Drain Current (A) 0.00 0.15 0.30 0.45 0.60 0 2 4 6 8 10 TJ = 25 °C TJ = 150 °C - O n -R e s is ta n c e (Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 0 5 10 15 20 25 VDS = 80 V ID = 3.6 A VDS = 50 V VDS = 25 V - G a te -t o -S o u rc e V o lt a g e (V ) Qg - Total Gate Charge (nC) V G S

Page 5

www.vishay.com 4 Document Number: 65903 S10-0634-Rev. A, 22-Mar-10 Vishay Siliconix SUD09P10-195 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S Crss 0 400 800 1200 1600 0 20 40 60 80 100 Ciss Coss VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e (p F ) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 ID = 3.6 A VGS = 4.5 V VGS = 10 V TJ - Junction Temperature (°C) (N o rm a li z e d ) - O n -R e s is ta n c e R D S (o n ) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA (V ) V G S (t h ) TJ - Temperature (°C) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA V D S - D ra in -t o -S o u rc e V o lt a g e ( V ) TJ - Junction Temperature (°C) 0 2 4 6 8 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) I D - D ra in C u rr e n t (A )

Page 6

Vishay Siliconix SUD09P10-195 Document Number: 65903 S10-0634-Rev. A, 22-Mar-10 www.vishay.com 5 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65903. Single Pulse Avalanche Current Capability vs. Time 1 10 100 Time (s) I D A V ( A ) TJ = 150 °C TJ = 25 °C 10-3 10-2 10-110-410-6 10-5 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited by RDS(on)* BVDSS Limited 1 ms 100 μs 10 ms 1 s, 10 s, DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - D ra in C u rr e n t (A ) I D Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 01110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a li z e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.05 Single Pulse 0.02

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