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SUD35N10-26P-GE3

hotSUD35N10-26P-GE3

SUD35N10-26P-GE3

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Part Number SUD35N10-26P-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 100V 35A DPAK
Datasheet SUD35N10-26P-GE3 Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 85,832 piece(s)
Unit Price $ 1.0395 *
Lead Time Can Ship Immediately
Estimated Delivery Time Oct 29 - Nov 3 (Choose Expedited Shipping)
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Part Number # SUD35N10-26P-GE3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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SUD35N10-26P-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SUD35N10-26P-GE3Datasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesTrenchFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 12V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs26 mOhm @ 12A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

SUD35N10-26P-GE3 Datasheet

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SUD35N10-26P www.vishay.com Vishay Siliconix S15-1599-Rev. B, 06-Jul-15 1 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 100 V (D-S) MOSFET Ordering Information: SUD35N10-26P-E3 (lead (Pb)-free) FEATURES • TrenchFET® power MOSFET • 100 % UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary side switch Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 50 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (TYP.) 100 0.0260 at VGS = 10 V 35 31 nC 0.0375 at VGS = 7 V 31 TO-252 Top View G D S Drain connected to tab N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID 35 A TC = 70 °C 32 TA = 25 °C 12 b, c TA = 70 °C 10 b, c Pulsed Drain Current IDM 40 Continuous Source-Drain Diode Current TC = 25 °C IS 50 e TA = 25 °C 6.9 b, c Avalanche Current Pulse L = 0.1 mH IAS 33 Single Pulse Avalanche Energy EAS 55 mJ Maximum Power Dissipation TC = 25 °C PD 83 W TC = 70 °C 58 TA = 25 °C 8.3 b, c TA = 70 °C 5.8 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, d t ≤ 10 s RthJA 15 18 °C/W Maximum Junction-to-Case Steady State RthJC 1.5 1.8

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SUD35N10-26P www.vishay.com Vishay Siliconix S15-1599-Rev. B, 06-Jul-15 2 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient ΔVDS/TJ ID = 250 μA - 165 - mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - -11 - Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 1 μA VDS = 100 V, VGS = 0 V, TJ = 55 °C - - 10 On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 40 - - A Drain-Source On-State Resistance a RDS(on) VGS = 10 V, ID = 12 A - 0.0210 0.0260 Ω VGS = 7 V, ID = 8 A - 0.0285 0.0375 Forward Transconductance a gfs VDS = 15 V, ID = 12 A - 25 - S Dynamic b Input Capacitance Ciss VDS = 12 V, VGS = 0 V, f = 1 MHz - 2000 - pFOutput Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 60 - Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 12 A - 31 47 nCGate-Source Charge Qgs - 10 - Gate-Drain Charge Qgd - 9 - Gate Resistance Rg f = 1 MHz - 1.5 - Ω Turn-On Delay Time td(on) VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω - 10 15 ns Rise Time tr - 10 15 Turn-Off Delay Time td(off) - 15 25 Fall Time tf - 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - - 50 A Pulse Diode Forward Current a ISM - - 40 Body Diode Voltage VSD IS = 10 A - 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - 50 75 ns Body Diode Reverse Recovery Charge Qrr - 100 150 nC Reverse Recovery Fall Time ta - 38 - ns Reverse Recovery Rise Time tb - 12 -

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SUD35N10-26P www.vishay.com Vishay Siliconix S15-1599-Rev. B, 06-Jul-15 3 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D VGS = 10 V thru 7 V VGS = 5 V VGS = 6 V VGS = 4 V 0.020 0.021 0.022 0.023 0 10 20 30 40 - O n -R e s is ta n c e ( Ω ) R D S (o n ) ID - Drain Current (A) VGS = 10 V 0 2 4 6 8 10 0 5 10 15 20 25 30 35 ID = 12 A - G a te -t o -S o u rc e V o lt a g e (V ) Qg - Total Gate Charge (nC) V G S VDS = 80 V VDS = 50 V 0 2 4 6 8 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D TC = 25 °C TC = - 55 °C TC = 125 °C Crss 0 500 1000 1500 2000 2500 0 20 40 60 80 100 Coss Ciss VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e ( p F ) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) (N o rm a liz e d ) - O n -R e s is ta n c e R D S (o n ) ID = 12 A VGS = 10 V

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SUD35N10-26P www.vishay.com Vishay Siliconix S15-1599-Rev. B, 06-Jul-15 4 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage RDS(on) vs. VGS vs. Temperature Single Pulse Power, Junction-to-Ambient Safe Operating Area 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S TJ = 25 °C 1 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA (V ) V G S (t h ) TJ - Temperature (°C) 0.00 0.02 0.04 0.06 0.08 4 5 6 7 8 9 10 - O n -R e s is ta n c e (Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID = 12 A 0 50 100 150 200 P o w e r (W ) Time (s) 10 10000.10.010.001 1001 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 - D ra in C u rr e n t (A ) I D 0.1 TA = 25 °C Single Pulse 10 ms 100 ms DC 1 s 10 s Limited by RDS(on)* 1 ms BVDSS Limited 100 µs

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SUD35N10-26P www.vishay.com Vishay Siliconix S15-1599-Rev. B, 06-Jul-15 5 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Current Derating a Power Derating Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 0 10 20 30 40 0 25 50 75 100 125 150 TC - Case Temperature (°C) I D - D ra in C u rr e n t (A ) 0 20 40 60 80 25 50 75 100 125 150 TC - Case Temperature (°C) P o w e r D is s ip a ti o n ( W )

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SUD35N10-26P www.vishay.com Vishay Siliconix S15-1599-Rev. B, 06-Jul-15 6 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69796. 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 40 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 0.02 10-3 10-2 01110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.01 Single Pulse 0.02 0.05

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Package Information www.vishay.com Vishay Siliconix Revision: 16-May-16 1 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TO-252AA Case Outline Notes • Dimension L3 is for reference only. L 3 D L 4 L 5 b b2 e1 E1 D 1 C A1 g a g e p la n e h e ig h t (0 .5 m m ) e b3 E C2 A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347

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Application Note 826 Vishay Siliconix Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0 .4 2 0 (1 0 .6 6 8 ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0 .2 4 3 (6 .1 8 0 ) 0 .0 8 7 (2 .2 0 2 ) 0 .0 9 0 (2 .2 8 6 ) Return to IndexReturn to Index

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Ale*****Dash

August 21, 2020

Bought these to help prevent solar panels from feeding back. Works great and doesn't get as hot.

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August 16, 2020

Works great with an older drive in a newer computer.have not encountered any problems, Glad somebody is making these for all the older equipment.

Mada*****Mullen

August 16, 2020

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August 15, 2020

No problem in making an order and will see how the shipping goes.

Cal***** Yogi

August 6, 2020

Good! quick and convenient delivery. product tracking with good advice.

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