TB3500H-13-F

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TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 1 of 6 www.diodes.com May 2011 © Diodes Incorporated TB0640H - TB3500H 100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Features • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part 68, ITU-T K.20/K.21, and UL497B • UL Listed Under Recognized Component Index, File Number 156346 • Lead Free Finish/RoHS Compliant (Note 1) • Green Molding Compound (No Halogen and Antimony) (Note 2) Mechanical Data • Case: SMB • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 • Polarity: None; Bidirectional Devices Have No Polarity Indicator • Weight: 0.093 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging TB0640H-13-F SMB 3000/Tape & Reel TB0720H-13-F SMB 3000/Tape & Reel TB0900H-13-F SMB 3000/Tape & Reel TB1100H-13-F SMB 3000/Tape & Reel TB1300H-13-F SMB 3000/Tape & Reel TB1500H-13-F SMB 3000/Tape & Reel TB1800H-13-F SMB 3000/Tape & Reel TB2300H-13-F SMB 3000/Tape & Reel TB2600H-13-F SMB 3000/Tape & Reel TB3100H-13-F SMB 3000/Tape & Reel TB3500H-13-F SMB 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes. 2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information   Green Top View Bottom View xxxxx = Product type marking code (See table on page 2) = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year (ex: 6 for 2006) WW = Week code (01 to 53) YWW xxxxx

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TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 2 of 6 www.diodes.com May 2011 © Diodes Incorporated TB0640H - TB3500H Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Non-Repetitive Peak Impulse Current @10/1000us Ipp 100 A Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) ITSM 50 A Typical Positive Temperature Coefficient for Breakdown Voltage ΔVBR/ΔTJ 0.1 %/°C Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Lead RθJL 20 °C/W Thermal Resistance, Junction to Ambient RθJA 100 °C/W Junction Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Maximum Rated Surge Waveform Waveform Standard Ipp (A) 2/10μs GR-1089-CORE 500 8/20μs IEC 61000-4-5 400 10/160μs FCC Part 68 250 10/700μs (Note 4) ITU-T, K.20/K.21 200 10/560μs FCC Part 68 160 10/1000μs GR-1089-CORE 100 Notes: 4. Applied 6kV, 10/700μs waveform I , P E A K P U L S E C U R R E N T ( % ) P P Peak Value (I )pp Half Value t = rise time to peak value t = decay time to half value r p tr tp

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TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 3 of 6 www.diodes.com May 2011 © Diodes Incorporated TB0640H - TB3500H Electrical Characteristics @TA = 25°C unless otherwise specified Part Number Maximum Rated Repetitive Off-State Voltage Maximum Off-State Leakage Current @ VDRM Maximum Breakover Voltage Maximum On-State Voltage @ IT = 1A Breakover Current IBO Holding Current IH Typical Off-State Capacitance Marking Code VDRM (V) IDRM (uA) VBO (V) VT (V) Min (mA) Max (mA) Min (mA) Max (mA) CO (pF) TB0640H 58 5 77 3.5 50 800 150 800 200 T064H TB0720H 65 5 88 3.5 50 800 150 800 200 T072H TB0900H 75 5 98 3.5 50 800 150 800 200 T090H TB1100H 90 5 130 3.5 50 800 150 800 120 T110H TB1300H 120 5 160 3.5 50 800 150 800 120 T130H TB1500H 140 5 180 3.5 50 800 150 800 120 T150H TB1800H 160 5 220 3.5 50 800 150 800 120 T180H TB2300H 190 5 265 3.5 50 800 150 800 80 T230H TB2600H 220 5 300 3.5 50 800 150 800 80 T260H TB3100H 275 5 350 3.5 50 800 150 800 80 T310H TB3500H 320 5 400 3.5 50 800 150 800 80 T350H Symbol Parameter VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current (Note 5) VT On state voltage IPP Peak pulse current CO Off-state capacitance (Note 6) Notes: 5. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 6. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. IBO VBR VDRM VT VBO IH I V IBR IDRM IPP

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TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 4 of 6 www.diodes.com May 2011 © Diodes Incorporated TB0640H - TB3500H I , O F F -S TA T E C U R R E N T ( uA ) (D R M ) T , JUNCTION TEMPERATURE (°C) Fig. 1 Off-State Current vs. Junction Temperature J 0.001 0.01 1 0.1 10 100 -25 0 25 50 75 100 125 150 V = 50VDRM 0.9 T , JUNCTION TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature J 0.95 1 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 175 N O R M A L IZ E D B R E A K D O W N V O LT A G E 1 1.05 0.95 -50 N O R M A LI Z E D B R E A K D O W N V O LT A G E 1.1 -25 0 755025 125100 175150 T , JUNCTION TEMPERATURE Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature J (ºC) 1 10 100 1 1.5 32.52 43.5 54.5 I , O N -S TA T E C U R R E N T ( A ) T V , ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage T 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.4 1.3 1.2 -50 -25 0 25 50 10075 125 N O R M A LI Z E D H O L D IN G C U R R E N T T , JUNCTION TEMPERATURE (°C)J Fig. 5 Relative Variation of Holding Current vs. Junction Temperature 0.1 1 1 10 100 N O R M A LI Z E D C A P A C IT A N C E V , REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias R

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TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 5 of 6 www.diodes.com May 2011 © Diodes Incorporated TB0640H - TB3500H Package Outline Dimensions Suggested Pad Layout SMB Dim Min Max A 3.30 3.94 B 4.06 4.57 C 1.96 2.21 D 0.15 0.31 E 5.00 5.59 G 0.05 0.20 H 0.76 1.52 J 2.00 2.50 All Dimensions in mm Dimensions Value (in mm) Z 6.8 G 1.8 X 2.3 Y 2.5 C 4.3 A B C D GH E J Z X C GY