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TS271BIDT

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TS271BIDT

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Part Number TS271BIDT
Manufacturer STMicroelectronics
Description IC OPAMP GP 100KHZ 8SO
Datasheet TS271BIDT Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 201,128 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 21 - Sep 26 (Choose Expedited Shipping)
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Part Number # TS271BIDT (Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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TS271BIDT Specifications

ManufacturerSTMicroelectronics
CategoryIntegrated Circuits (ICs) - Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Datasheet TS271BIDTDatasheet
Package8-SOIC (0.154", 3.90mm Width)
Series-
Amplifier TypeGeneral Purpose
Number of Circuits1
Output Type-
Slew Rate0.04 V/µs
Gain Bandwidth Product100kHz
-3db Bandwidth-
Current - Input Bias1pA
Voltage - Input Offset250µV
Current - Supply10µA
Current - Output / Channel45mA
Voltage - Supply, Single/Dual (±)3 V ~ 16 V, ��1.5 V ~ 8 V
Operating Temperature-40°C ~ 125°C
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

TS271BIDT Datasheet

Page 1

Page 2

TS271 CMOS Programmable Low Power Single Operational Amplifier■ Offset null capability (by external compensation) ■ Dynamic characteristics adjustable ISET ■ Consumption current and dynamic parameters are stable regarding the voltage power supply variations ■ Output voltage can swing to ground ■ Very large ISET range ■ Stable and low offset voltage ■ Three input offset voltage selections Description The TS271 is a low cost, low power single operational amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications. The power supply is externally programmable with a resistor connected between pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values: 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature see Figure 8, Figure 19, Figure 30. Pin Connections (top view) Order Codes N DIP8 (Plastic Package) D SO-8 (Plastic Micropackage) 1 2 3 4 5 6 7 8 CC - - + 1 - Offset Null 1 2 - Inverting Input 1 3 - Non-inverting Input 1 4 - V 5 - Offset Null 2 6 - Output 7 - V 8 - I + CC Set Part Number Temperature Range Package Packaging TS271CN/ACN 0°C, +70°C DIP Tube TS271CD/CDT/ACD/ACDT SO Tube and Tape & Reel TS271IN/AIN/ -40°C, +125°C DIP Tube TS271ID/IDT/AID/AIDT/BID/BIDT SO Tube and Tape & Reel TS271BMD -55°C, +125°C SO TubeMarch 2005 Revision 2 1/17

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TS271 Block Diagram1 Block Diagram Figure 1. Application block diagram2/17

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Absolute Maximum Ratings TS2712 Absolute Maximum Ratings Table 1. Key parameters and their absolute maximum ratings Symbol Parameter TS271C/AC/BC TS271I/AI/BI TS271M/AM/BM Unit VCC+ Supply Voltage 1 1) All values, except differential voltage are with respect to network ground terminal. 18 V Vid Differential Input Voltage 2 2) Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. ±18 V Vi Input Voltage 3 3) The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. -0.3 to 18 V Io Output Current for VCC + ≥ 15V ±30 mA Iin Input Current ±5 mA Toper Operating Free-Air Temperature Range 0 to +70 -40 to +125 -55 to +125 °C Tstg Storage Temperature Range -65 to +150 °C Table 2. Operating conditions Symbol Parameter Value Unit VCC + Supply Voltage 3 to 16 V Vicm Common Mode Input Voltage Range 0 to VCC + - 1.5 V3/17

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TS271 Absolute Maximum Ratings Figure 2. Schematic Diagram4/17

Page 6

Absolute Maximum Ratings TS271Figure 3. Offset voltage null circuit Figure 4. Offset voltage null circuit 8 1 5 + - Rset 25kΩ VCC- OFFSET COMPENSATION GUARANTEED FOR TS271BCX (I > 25 A), TS271ACX (I > 90 A)SET SETµ µ 8 1 5 + - Rset 25kΩ VCC- OFFSET COMPENSATION GUARANTEED FOR TS271BCX (I > 25 A), TS271ACX (I > 90 A)SET SETµ µ Figure 5. Resistor biasing Figure 6. Rset connected to Vcc- + - Rset VCC - VCC + VO + - Rset VCC - VCC + VO Rset CONNECTED TO GROUND Rset CONNECTED TO VCC - (Rset VALUE : SEE Fig. 1) Rset 10MΩ 1MΩ 100kΩ 10kΩ 0.1 Aµ 1 Aµ 10 Aµ 100 Aµ Iset V = +3VCC V = +5VCC V = +16VCC V = +10VCC5/17

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TS271 Electrical Characteristics3 Electrical Characteristics Table 3. for ISET = 1.5µA - VCC + = +10V, VCC -= 0V, Tamb = +25°C (unless otherwise specified) Symbol Parameter TS271C/AC/BC TS271I/AI/BI TS271M/AM/BM Unit Min. Typ. Max. Min. Typ. Max. Vio Input Offset Voltage VO = 1.4V, Vic = 0V TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM 1.1 0.9 0.25 10 5 2 12 6.5 3 1.1 0.9 0.25 10 5 2 12 6.5 3.5 mV DVio Input Offset Voltage Drift 2 2 µV/°C Iio Input Offset Current note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 1) Maximum values including unavoidable inaccuracies of the industrial test. 1 100 1 200 pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 1 150 1 300 pA VOH High Level Output Voltage Vid = 100mV, RL = 1MΩ Tmin ≤ Tamb ≤ Tmax 8.8 8.7 9 8.8 8.6 9 V VOL Low Level Output Voltage Vid = -100mV 50 50 mV Avd Large Signal Voltage Gain ViC = 5V, RL = 1MΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax 30 20 100 30 20 100 V/mV GBP Gain Bandwidth Product Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz 0.1 0.1 MHz CMR Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V 60 80 60 80 dB SVR Supply Voltage Rejection Ratio VCC + = 5V to 10V, Vo = 1.4V 60 80 60 80 dB ICC Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax 10 15 17 10 15 18 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 mA Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 mA SR Slew Rate at Unity Gain RL = 1MΩ, CL = 100pF, Vi = 3 to 7V 0.04 0.04 V/µs φm Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF 35 10 35 10 Degrees KOV Overshoot Factor Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF 40 70 40 70 % en Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 30 30 nV Hz -----------6/17

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Electrical Characteristics TS271Typical characteristics for ISET = 1.5µA Figure 7. Supply current versus supply voltage Figure 8. Input bias current versus free air temperature Figure 9. High level output voltage versus high level output current CCSUPPLY VOLTAGE, V (V) C C amb V O CC ° 0 4 8 12 16 20 µ S U P P L Y C U R R E N T , I ( A ) T = 25 C A = 1 V = V / 215 10 5 25 50 75 100 125 amb IN P U T B IA S C U R R E N T , I (p A ) IB TEMPERATURE, T ( °C) V = 10V V = 5V CC i 100 10 1 5 4 3 2 1 0 -10 -8 -6 -4 -2 0 OHOUTPUT CURRENT, I (mA) O U T P U T V O L T A G E , V (V ) O H amb id T = 25 C V = 100mV ° V = 5V V = 3V CC CC Figure 10. High level output voltage versus high level output current Figure 11. Low level output voltage versus low level output current Figure 12. Low level output voltage versus low level output current 20 16 12 8 4 0 -50 -40 -30 -20 -10 0 amb id °T = 25 C V = 100mV V = 16VCC CCV = 10V OUTPUT CURRENT, I (mA)OH O H O U T P U T V O L T A G E , V (V ) 1 .0 0.8 0.6 0.4 0.2 amb ic id T = 25°C V = 0.5V V = -100m V V = 3V V = 5V C C C C O L O U T P U T V O L T A G E , V (V ) 0 1 2 3 O U T PU T C U R R E N T, I (m A )OL 0 4 8 12 16 20 O U T P U T V O L T A G E , V (V ) O L amb id i T = 25°C V = 0.5V V = -100m V V = 10VC C V = 16V O U TP U T C U R R E N T, I (m A)OL 3 2 1 C C7/17

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TS271 Electrical CharacteristicsFigure 13. Open loop frequency response and phase shift Figure 14. Gain bandwidth product versus supply voltage Figure 15. Phase margin versus supply voltage 50 40 30 20 10 0 -10 6 1010 2 3 10 4 10 5 10 G A IN (d B ) P H A S E (D e g re e s )0 45 90 135 180 FR EQ U EN C Y , f (H z) P H A SE G A IN Phase Margin Gain Bandwidth Product T = 25°C V = 10V R = 1MΩ C = 100pF A = 100 a m b C C L L V C L + 0 4 8 12 16G A IN B A N D W . P R O D ., G B P (M H z ) S U P PLY VO LTA G E , V (V ) C C 120 100 80 60 40 a m b L L V T = 25°C R = 1MΩ C = 100pF A = 1 10 0 4 8 12 16 S U P PLY VO LTA G E , V (V )C C P H A S E M A R G IN , m (D e g re e s ) φ 8 4 2 a m b L L V T = 25°C R = 1MΩ C = 100pF A = 1 6 Figure 16. Phase margin versus capacitive load Figure 17. Slew rate versus supply voltage 40 30 20 10 LC A P AC IT AN C E , C (pF) P H A S E M A R G IN , m (D e g re e s ) φ 200 80 1006040 a m b L V T = 25°C R = 1M Ω A = 1 V = 10V C C 0.01 4 6 8 10 12 14 16 S U P P LY V O LT AG E , V (V )C C S L E W R A T E S , S R (V /µ s ) S R S R a m b L L T = 25°C R = 1MΩ C = 100pF 0.03 0.04 0.05 0.06 0.07 0.028/17

Page 10

Electrical Characteristics TS2714 Electrical Characteristics Table 4. for ISET = 25µA - VCC + = +10V, VCC -= 0V, Tamb = +25°C (unless otherwise specified) Symbol Parameter TS271C/AC/BC TS271I/AI/BI TS271M/AM/BM Unit Min. Typ. Max. Min. Typ. Max. Vio Input Offset Voltage VO = 1.4V, Vic = 0V TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM Tmin ≤ Tamb ≤ Tmax TS271B/C/I/M TS271AC/AI/AM TS271BC/BI/BM 1.1 0.9 0.25 10 5 2 12 6.5 3 1.1 0.9 0.25 10 5 2 12 6.5 3.5 mV DVio Input Offset Voltage Drift 2 2 µV/°C Iio Input Offset Current note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 1) Maximum values including unavoidable inaccuracies of the industrial test. 1 100 1 200 pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 1 150 1 300 pA VOH High Level Output Voltage Vid = 100mV, RL = 100kΩ Tmin ≤ Tamb ≤ Tmax 8.7 8.6 8.9 8.7 8.5 8.9 V VOL Low Level Output Voltage Vid = -100mV 50 50 mV Avd Large Signal Voltage Gain ViC = 5V, RL = 100kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax 30 20 50 30 10 50 V/mV GBP Gain Bandwidth Product Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz 0.7 0.7 MHz CMR Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V 60 80 60 80 dB SVR Supply Voltage Rejection Ratio VCC + = 5V to 10V, Vo = 1.4V 60 80 60 80 dB ICC Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax 150 200 250 150 200 300 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 mA Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 mA SR Slew Rate at Unity Gain RL = 100kΩ, CL = 100pF, Vi = 3 to 7V 0.6 0.6 V/µs φm Phase Margin at Unity Gain Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF 50 30 50 30 Degrees KOV Overshoot Factor Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF 30 50 30 50 % en Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 38 38 nV Hz -----------9/17

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August 18, 2020

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August 18, 2020

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August 13, 2020

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August 8, 2020

Worked wonderfully. Went through the instructions to the tea to make sure it was done correctly.

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August 6, 2020

Good! quick and convenient delivery. product tracking with good advice.

Ir*****Howe

July 28, 2020

Competitively priced set of diodes, tested as described. Quality is about what you would expect for no- or off-brand.

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July 12, 2020

To be honest, you're beating your competitor on delivery - sometimes I request 2nd day and you still get it here overnight. Thanks!

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July 12, 2020

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July 11, 2020

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July 6, 2020

Serves its purpose. All that's needed.

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