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TSAL4400

hot TSAL4400

TSAL4400

For Reference Only

Part Number TSAL4400
Manufacturer Vishay Semiconductor Opto Division
Description EMITTER IR 940NM 100MA RADIAL
Datasheet TSAL4400 Datasheet
Package Radial, 3mm Dia (T-1)
In Stock 111072 piece(s)
Unit Price $ 0.57 *
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TSAL4400

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TSAL4400 Specifications

ManufacturerVishay Semiconductor Opto Division
CategoryOptoelectronics - Infrared, UV, Visible Emitters
Datasheet TSAL4400 Datasheet
PackageRadial, 3mm Dia (T-1)
Series-
TypeInfrared (IR)
Current - DC Forward (If) (Max)100mA
Radiant Intensity (Ie) Min @ If16mW/sr @ 100mA
Wavelength940nm
Voltage - Forward (Vf) (Typ)1.35V
Viewing Angle50��
OrientationTop View
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeThrough Hole
Package / CaseRadial, 3mm Dia (T-1)

TSAL4400 Datasheet

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TSAL4400 www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Nov-16 1 Document Number: 81006 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 25° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector TEFT4300 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared remote control units • Free air transmission systems • Infrared source for optical counters and card readers Note • Test conditions see table “Basic Characteristics“ Note • MOQ: minimum order quantity 94 8636 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) TSAL4400 36 ± 25 940 15 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL4400 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 TSAL4400-RSZ Ammopack MOQ: 8000 pcs, 2000 pcs/box T-1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W

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TSAL4400 www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Nov-16 2 Document Number: 81006 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 80 90 100 21317 Tamb - Ambient Temperature (°C) P V - P o w e r D is s ip a ti o n ( m W ) RthJA = 300 K/W 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)21318 I F - F o rw a rd C u rr e n t (m A ) RthJA = 300 K/W BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms VF - 1.35 1.6 V IF = 1 A, tp = 100 μs VF - 2.6 3 V Temperature coefficient of VF IF = 1 mA TKVF - -1.8 - mV/K Reverse current VR = 5 V IR - - 10 μA Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj - 60 - pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 16 36 80 mW/sr IF = 1 A, tp = 100 μs Ie 135 290 - mW/sr Radiant power IF = 100 mA, tp = 20 ms φe - 40 - mW Temperature coefficient of φe IF = 20 mA TKφe - -0.6 - %/K Angle of half intensity ϕ - ± 25 - deg Peak wavelength IF = 100 mA λp - 940 - nm Spectral bandwidth IF = 100 mA Δλ - 25 - nm Temperature coefficient of λp IF = 100 mA TKλp - 0.25 - nm/K Rise time IF = 100 mA tr - 15 - ns Fall time IF = 100 mA tf - 15 - ns tp - Pulse Duration (ms) 96 11987 10 0 101 10 1 10 -1 10-1 100 10210-2 I - F o rw a rd C u rr e n t (A ) F tp/T = 0.01 IFSM = 1 A (Single Pulse) 0.05 0.1 0.5 1.0 1 10 100 10 000 0 1 2 3 4 I F - F o rw a rd C u rr e n t (m A ) VF - Forward Voltage (V) 1000 tp = 100 µs tp/T = 0.001 13600

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TSAL4400 www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Nov-16 3 Document Number: 81006 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature Fig. 8 - Relative Radiant Power vs. Wavelength Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 0.1 1 10 100 1000 1 10 100 1000 I e - R a d ia n t In te n s it y ( m W /s r) IF - Forward Current (mA) tp = 100 μs - R a d ia n t P o w e r (m W ) e IF - Forward Current (mA)13602 10 310 1 10 2 10 410 0 0.1 1 10 1000 100 Φ -10 10 50 0 100 0 0.4 0.8 1.2 1.6 I e r e l; 140 94 7993 IF = 20 mA Φ e r e l T amb - Ambient Temperature (°C) 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 λ - Wavelength (nm)21445 Φ e r e l - R e la ti v e R a d ia n t P o w e r (% ) IF = 30 mA 0.4 0.2 0 14328 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 I - R e la ti v e R a d ia n t In te n s it y e re l ϕ - A n g u la r D is p la c e m e n t

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TSAL4400 www.vishay.com Vishay Semiconductors Rev. 1.9, 03-Nov-16 4 Document Number: 81006 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters technical drawings according to DIN specifications Drawing-No.: 6.544-5255.01-4 Issue: 9; 28.07.14 Ø 3 .2 ± 0 .1 5 A C Ø 2.9 ± 0.15 0.4 + 0.15 - 0.05 AREA NOT PLANE R1.4 (sphere) < 0 .6 3 .4 ± 0 .1 5 4 .4 ± 0 .3 5 .8 ± 0 .3 3 4 .4 ± 0 .5 1 .5 ± 0 .5 2.54 nom. (2 .5 ) 0.5 + 0.2 - 0.1

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