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VS-40HFR10M

VS-40HFR10M

VS-40HFR10M

For Reference Only

Part Number VS-40HFR10M
Manufacturer Vishay Semiconductor Diodes Division
Description DIODE STD REC 40A DO5
Datasheet VS-40HFR10M Datasheet
Package DO-203AB, DO-5, Stud
In Stock 213 piece(s)
Unit Price $ 15.4304 *
Lead Time To be Confirmed
Estimated Delivery Time Jul 11 - Jul 16 (Choose Expedited Shipping)
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Part Number # VS-40HFR10M (Diodes - Rectifiers - Single) is manufactured by Vishay Semiconductor Diodes Division and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For VS-40HFR10M specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add VS-40HFR10M with quantity into BOM. Heisener.com does NOT require any registration to request a quote of VS-40HFR10M.

VS-40HFR10M Specifications

ManufacturerVishay Semiconductor Diodes Division
CategoryDiscrete Semiconductor Products - Diodes - Rectifiers - Single
Datasheet VS-40HFR10MDatasheet
PackageDO-203AB, DO-5, Stud
Series-
Diode TypeStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)40A
Voltage - Forward (Vf) (Max) @ If1.3V @ 125A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr-
Capacitance @ Vr, F-
Mounting TypeChassis, Stud Mount
Package / CaseDO-203AB, DO-5, Stud
Supplier Device PackageDO-203AB (DO-5)
Operating Temperature - Junction-65°C ~ 190°C

VS-40HFR10M Datasheet

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VS-40HF(R) Series www.vishay.com Vishay Semiconductors Revision: 07-Sep-17 1 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Standard Recovery Diodes, (Stud Version), 40 A FEATURES • High surge current capability • Stud cathode and stud anode version • Leaded version available • Types up to 1600 V VRRM • Designed and qualified for multiple level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Battery charges • Converters • Power supplies • Machine tool controls • Welding ELECTRICAL SPECIFICATIONS PRIMARY CHARACTERISTICS IF(AV) 40 A Package DO-5 (DO-203AB) Circuit configuration Single DO-5 (DO-203AB) MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 40HF(R) UNITS 10 TO 120 140/160 IF(AV) 40 40 A TC 140 110 °C IF(RMS) 62 62 A IFSM 50 Hz 570 570 A 60 Hz 595 595 I2t 50 Hz 1600 1600 A2s 60 Hz 1450 1450 VRRM Range 100 to 1200 1400 to 1600 V TJ -65 to 190 -65 to 160 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = TJ MAXIMUM mA VS-40HF(R) 10 100 200 9 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 4.5 160 1600 1700

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VS-40HF(R) Series www.vishay.com Vishay Semiconductors Revision: 07-Sep-17 2 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 40HF(R) UNITS 10 TO 120 140/160 Maximum average forward current  at case temperature IF(AV) 180° conduction, half sine wave 40 40 A 140 110 °C Maximum RMS forward current IF(RMS) 62 A Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage  reapplied Sinusoidal half wave, initial TJ = TJ maximum 570 A t = 8.3 ms 595 t = 10 ms 100 % VRRM reapplied 480 t = 8.3 ms 500 Maximum I2t for fusing I2t t = 10 ms No voltage  reapplied 1600 A2s t = 8.3 ms 1450 t = 10 ms 100 % VRRM reapplied 1150 t = 8.3 ms 1050 Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s Value of threshold voltage (up to 1200 V) VF(TO) TJ = TJ maximum 0.65 V Value of threshold voltage (for 1400 V/1600 V) VF(TO) 0.76 Value of forward slope resistance (up to 1200 V) rf TJ = TJ maximum 4.29 m Value of forward slope resistance (for 1400 V/1600 V) rf 3.8 Maximum forward voltage drop VFM Ipk = 125 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 1.50 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 40HF(R) UNITS 10 to 120 140 to 160 Maximum junction operating and storage temperature range TJ, TStg -65 to 190 -65 to 160 °C Maximum thermal resistance, junction to case RthJC DC operation 0.95 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25 Maximum allowable mounting torque (+0 %, -10 %) Not lubricated thread, tighting on nut (1) 3.4 (30) N · m (lbf · in) Lubricated thread, tighting on nut (1) 2.3 (20) Not lubricated thread, tighting on hexagon (2) 4.2 (37) Lubricated thread, tighting on hexagon (2) 3.2 (28) Approximate weight 17 g 0.6 oz. Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.14 0.10 TJ = TJ maximum K/W 120° 0.16 0.17 90° 0.21 0.22 60° 0.30 0.31 30° 0.50 0.50

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VS-40HF(R) Series www.vishay.com Vishay Semiconductors Revision: 07-Sep-17 3 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Average Forward Current (A)M a x im u m A ll o w a b le C a s e T e m p e ra tu re ( °C ) 130 140 150 160 170 180 190 0 5 10 15 20 25 30 35 40 45 30 ° 60 ° 90 ° 120 ° 180 ° Conduction Angle 40HF(R) Series (100 V to 1200 V) Average Forward Current (A)M a x im u m A ll o w a b le C a s e T e m p e ra tu re ( °C ) 120 130 140 150 160 170 180 190 0 10 20 30 40 50 60 70 DC 30 ° 60 ° 90 ° 120 ° 180 ° Conduction Period 40HF(R) Series (100 V to 1200 V) Average Forward Current (A)M a x im u m A ll o w a b le C a s e T e m p e ra tu re ( °C ) 100 110 120 130 140 150 160 0 5 10 15 20 25 30 35 40 45 30 ° 60 ° 90 ° 120 ° 180 ° Conduction Angle 40HF(R) Series (1400 V, 1600 V) Average Forward Current (A)M a x im u m A ll o w a b le C a s e T e m p e ra tu re ( °C ) 80 90 100 110 120 130 140 150 160 0 10 20 30 40 50 60 70 DC 30° 60 ° 90° 120 ° 180 ° Conduction Period 40HF(R) Series (1400 V, 1600 V) Average Forward Current (A)M a x im u m A v e ra g e F o rw a rd P o w e r L o s s ( W ) Maximum Allowable Ambient Temperature (°C) 40 80 120 160 200 10 K/W R thS A = 1 K /W - D elta R 1.5 K /W 2 K /W 3 K/W 5 K/W 7 K/W 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 RMS Limit Conduction Angle 180° 120° 90° 60° 30° 40HF(R) Series (100 V to 1200 V) Tj = 190 °C

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VS-40HF(R) Series www.vishay.com Vishay Semiconductors Revision: 07-Sep-17 4 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics Average Forward Current (A)M a x im u m A v e ra g e F o rw a rd P o w e r L o s s ( W ) Maximum Allowable Ambient Temperature (°C) 40 80 120 160 200 10 K/W R thS A = 1 K /W - D elta R 1.5 K /W 2 K /W 3 K/W 5 K/W 7 K/W 0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 40HF(R) Series (100 V to 1200 V) Tj = 190 °C Average Forward Current (A)M a x im u m A v e ra g e F o rw a rd P o w e r L o s s ( W ) Maximum Allowable Ambient Temperature (°C) 25 50 75 100 125 150 175 200 1.5 K /W 2 K /W3 K/W 5 K/W 10 K/W 7 K/W R th S A = 1 K /W - D elta R 0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 RMS Limit Conduction Angle 180° 120° 90° 60° 30° 40HF(R) Series (1400 V, 1600 V) Tj = 160 °C Average Forward Current (A)M a x im u m A v e ra g e F o rw a rd P o w e r L o s s ( W ) Maximum Allowable Ambient Temperature (°C) 40 80 120 160 10 K/W R thSA = 1 K/W - D elta R 1.5 K/W2 K/W 3 K/W 5 K/W 7 K/W 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 40HF(R) Series (1400 V, 1600 V) Tj = 160 °C

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VS-40HF(R) Series www.vishay.com Vishay Semiconductors Revision: 07-Sep-17 5 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 11 - Forward Voltage Drop Characteristics (Up To 1200 V) Fig. 12 - Forward Voltage Drop Characteristics (For 1400 V/1600 V) Fig. 13 - Thermal Impedance ZthJC Characteristics Number Of Equal Amplitude Half Cycle Current Pulses (N) P e a k H a lf S in e W a v e F o rw a rd C u rr e n t (A ) 100 150 200 250 300 350 400 450 500 550 1 10 100 40HF(R) Series Initial Tj = Tj Max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Pulse Train Duration (s) P e a k H a lf S in e W a v e F o rw a rd C u rr e n t (A ) 100 150 200 250 300 350 400 450 500 550 600 0.01 0.1 1 Maximum Non Repetitive Surge Current 40HF(R) Series Initial Tj = Tj Max. No Voltage Reapplied Rated Vrrm Reapplied Versus Pulse Train Duration. Instantaneous Forward Voltage (V) In s ta n ta n e o u s F o rw a rd C u rr e n t (A ) 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 40HF(R) Series up to 1200 V TJ = 25 °C TJ = TJ Max. Instantaneous Forward Voltage (V) In s ta n ta n e o u s F o rw a rd C u rr e n t (A ) 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = 25 °C TJ = TJ Max. 40HF (R) Series Z t h J C - T ra n s ie n t T h e rm a l Im p e d a n c e ( K /W ) Square Wave Pulse Duration (s) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 Steady State Value (DC Operation) 40HF(R) .. Series

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VS-40HF(R) Series www.vishay.com Vishay Semiconductors Revision: 07-Sep-17 6 Document Number: 93513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ORDERING INFORMATION TABLE LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95344 2 - 40 = standard device 41 = not isolated lead 42 = isolated lead with silicone sleeve (red = reverse polarity) (blue = normal polarity) 3 - HF = standard diode 4 - None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A M = stud base DO-5 (DO-203AB) M6 x 1 Device code 5 61 32 4 40VS- HF R 160 M 1 - Vishay Semiconductors product

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Document Number: 95344 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 29-Sep-08 1 DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series Outline Dimensions Vishay Semiconductors DIMENSIONS FOR 40HF(R) SERIES in millimeters (inches) 1.20 (0.04) 1/4" 28UNF-2A for metric devices: M6 x 1 4 (0.16) MIN. 4 (0.16) Ø 14.6 (0.57) 6.1/7 (0.24/0.27) 25.4 (1) MAX. 17.40 (0.68) 11.1 ± 0.4 (0.44 ± 0.02) 10.8 (0.42) 11.4 (0.45)

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www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95344 2 Revision: 29-Sep-08 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series DIMENSIONS FOR 41HF(R) SERIES in millimeters (inches) 11 (0.43) MAX. Ø 6.3 (0.25) MAX. 118.5 (4.67) MAX. 107 (4.21) MAX.

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June 29, 2020

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June 20, 2020

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June 20, 2020

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June 18, 2020

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June 13, 2020

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June 9, 2020

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May 30, 2020

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May 22, 2020

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