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ZVN2110ASTZ

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ZVN2110ASTZ

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Part Number ZVN2110ASTZ
Manufacturer Diodes Incorporated
Description MOSFET N-CH 100V 320MA TO92-3
Datasheet ZVN2110ASTZ Datasheet
Package E-Line-3
In Stock 1,071 piece(s)
Unit Price $ 0.3002 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 2 - Jun 7 (Choose Expedited Shipping)
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Part Number # ZVN2110ASTZ (Transistors - FETs, MOSFETs - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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ZVN2110ASTZ Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet ZVN2110ASTZDatasheet
PackageE-Line-3
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds75pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Rds On (Max) @ Id, Vgs4 Ohm @ 1A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageE-Line (TO-92 compatible)
Package / CaseE-Line-3

ZVN2110ASTZ Datasheet

Page 1

Page 2

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt V DS * R DS(on) = 4Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 320 mA Pulsed Drain Current IDM 6 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 1 100 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) 1.5 A VDS=25V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) 4 Ω VGS=10V,ID=1A Forward Transconductance (1)(2) gfs 250 mS VDS=25V,ID=1A Input Capacitance (2) Ciss 75 pF Common Source Output Capacitance (2) Coss 25 pF VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 7 ns VDD ≈25V, ID=1A Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 13 ns Fall Time (2)(3) tf 13 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Ω E-Line TO92 Compatible ZVN2110A D G S TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) Transfer Characteristics 2 4 6 8 100 20 40 60 80 100 Saturation Characteristics V D S - D ra in S o u rc e V o lt a g e ( V o lt s ) Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) 0 2 4 6 8 10 2.8 2.4 1.6 0.4 0 0.8 2.0 1.2 I D (o n ) -O n -S ta te D ra in C u rr e n t (A m p s ) VDS=10V 0 10 6 2 4 8 0 2 4 6 8 10 ID= 1A 500mA 100mA I D (o n ) -O n -S ta te D ra in C u rr e n t (A m p s ) I D (o n ) -O n -S ta te D ra in C u rr e n t (A m p s ) Normalised RDS(on) and VGS(th) v Temperature Tj-Junction Temperature (°C) N o rm a lis e d R D S (o n ) a n d V G S (t h ) -40 -20 0 20 40 60 80 120100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Dr ai n- So ur ce R es ist an ce R DS (o n) Gate Threshold Voltage VGS(TH) ID=1 A VGS=10V ID=1mA VGS=VDS 180 0 0.8 0.4 1.2 2.0 1.6 8V 9V 7V 5V 4V 6V 3V 5V 4V 8V 6V 9V 7V VGS= 0 0.8 0.4 1.2 2.0 1.6 On-resistance v gate-source voltage VGS-Gate Source Voltage (Volts) R D S (o n )- D ra in S o u rc e R e s is ta n c e (Ω ) 1 10 100 500mA ID= 1A 100mA 1 10 5 VGS= 10V 3V 10V VDS=25V ZVN2110A 3-365

Page 3

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt V DS * R DS(on) = 4Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 320 mA Pulsed Drain Current IDM 6 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 1 100 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) 1.5 A VDS=25V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) 4 Ω VGS=10V,ID=1A Forward Transconductance (1)(2) gfs 250 mS VDS=25V,ID=1A Input Capacitance (2) Ciss 75 pF Common Source Output Capacitance (2) Coss 25 pF VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 7 ns VDD ≈25V, ID=1A Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 13 ns Fall Time (2)(3) tf 13 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. ( 3 ) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator E-Line TO92 Compatible ZVN2110A 3-364 D G S TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) Transfer Characteristics 2 4 6 8 100 20 40 60 80 100 Saturation Characteristics V D S - D ra in S o u rc e V o lt a g e ( V o lt s ) Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) 0 2 4 6 8 10 2.8 2.4 1.6 0.4 0 0.8 2.0 1.2 I D (o n ) -O n -S ta te D ra in C u rr e n t (A m p s ) VDS=10V 0 10 6 2 4 8 0 2 4 6 8 10 ID= 1A 500mA 100mA I D (o n ) -O n -S ta te D ra in C u rr e n t (A m p s ) I D (o n ) -O n -S ta te D ra in C u rr e n t (A m p s ) Normalised RDS(on) and VGS(th) v Temperature Tj-Junction Temperature (°C) N o rm a lis e d R D S (o n ) a n d V G S (t h ) -40 -20 0 20 40 60 80 120100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Dr ai n- So ur ce R es ist an ce R DS (o n) Gate Threshold Voltage VGS(TH) ID=1 A VGS=10V ID=1mA VGS=VDS 180 0 0.8 0.4 1.2 2.0 1.6 8V 9V 7V 5V 4V 6V 3V 5V 4V 8V 6V 9V 7V VGS= 0 0.8 0.4 1.2 2.0 1.6 On-resistance v gate-source voltage VGS-Gate Source Voltage (Volts) R D S (o n )- D ra in S o u rc e R e s is ta n c e (Ω ) 1 10 100 500mA ID= 1A 100mA 1 10 5 VGS= 10V 3V 10V VDS=25V ZVN2110A 3-365

ZVN2110ASTZ Reviews

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Dash*****havan

May 22, 2020

I wanted something that would handle voltage spikes. Worked perfectly. I plan to use four more.

Kyl*****orra

May 20, 2020

Not messy and easy to handle. I've used these professionally and for my self, and they never failed me.

Julia*****araman

May 10, 2020

FAST POSTING TOP CONDITION RECORD HAVE A GREAT CHRISTMAS

Jour*****Duarte

May 4, 2020

These were delivered very quickly and are fantastic selection of products.

Noah *****rishnan

May 2, 2020

Those components are in stock shipped fast and arrive promptly. Really Fast!

Wayn*****rris

April 25, 2020

Good communication and fast shipping! Recommended!

Zan*****adhwa

April 21, 2020

Heisener is awesome! Never any issues whatsoever. Product selection is good and delivery is on time.

Annal*****wkins

April 9, 2020

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low.

Shaw*****kins

April 6, 2020

Competitively priced set of diodes, tested as described. Quality is about what you would expect for no- or off-brand.

Blak*****rong

April 6, 2020

I've never had a problem with Heisener. Packages arrive on time and in great condition.

ZVN2110ASTZ Guarantees

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Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

ZVN2110ASTZ Packaging

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