ZXMP3A16GTA

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ZXMP3A16G Document Number DS33575 Rev. 6 - 2 1 of 8 www.diodes.com March 2015 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G A D V A N C E I N F O R M A T I O N 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max ID max TA = +25°C (Note 6) -30V 45mΩ @ VGS = -10V -7.5A 70mΩ @ VGS = -4.5V -5.9A Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high- efficiency power management applications. • Motor Control • DC-DC Converters • Power Management Functions • Relay and Solenoid Driving Features and Benefits • Low On-Resistance • Fast Switching Speed • Low Threshold • Low Gate Drive • Lead Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT223 • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.112 grams (Approximate) Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMP3A16GTA ZXMP3A16 7 12 1,000 ZXMP3A16GTC ZXMP3A16 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website. Marking Information Equivalent Circuit D S G Top View SOT223 Pin Out - Top View ZXMP3A16 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) SOT223 4310 Y W WZVNZXMP 3A 6 Green

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ZXMP3A16G Document Number DS33575 Rev. 6 - 2 2 of 8 www.diodes.com March 2015 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G A D V A N C E I N F O R M A T I O N Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current VGS = 10V (Note 6) ID -7.5 A TA = +70°C (Note 6) -6.0 (Note 5) -5.4 Pulsed Drain Current VGS = 10V (Note 7) IDM -24.9 A Continuous Source Current (Body diode) (Note 6) IS -3.2 A Pulsed Source Current (Body diode) (Note 7) ISM -24.9 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 5) PD 2.0 16 W mW/°C (Note 6) 3.9 31 Thermal Resistance, Junction to Ambient (Note 5) RθJA 62.5 °C/W (Note 6) 32.2 Thermal Resistance, Junction to Lead (Note 8) RθJL 8.51 Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note (5), except the device is measured at t ≤ 10 sec. 7. Same as Note (5), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead).

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ZXMP3A16G Document Number DS33575 Rev. 6 - 2 3 of 8 www.diodes.com March 2015 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G A D V A N C E I N F O R M A T I O N Thermal Characteristics 1 10 10m 100m 1 10 Single Pulse T amb =25°C R DS(on) Limited 100µs 1ms 10ms 100ms 1s DC Safe Operating Area -I D D ra in C u rr e n t (A ) -V DS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.4 0.8 1.2 1.6 2.0 Derating Curve Temperature (°C) M a x P o w e r D is s ip a ti o n ( W ) 100µ 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 T amb =25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 T h e rm a l R e s is ta n c e ( °C /W ) Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 1 10 100 Single Pulse T amb =25°C Pulse Power Dissipation Pulse Width (s) M a x im u m P o w e r (W )

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ZXMP3A16G Document Number DS33575 Rev. 6 - 2 4 of 8 www.diodes.com March 2015 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G A D V A N C E I N F O R M A T I O N Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30   V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS   -1 µA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0   V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS (ON)   45 mΩ VGS = -10V, ID = -4.2A 70 VGS = -4.5V, ID = -3.4A Forward Transconductance (Notes 9 & 10) gfs  9.2  S VDS = -15V, ID = -4.2A Diode Forward Voltage (Note 9) VSD  -0.85 -0.95 V IS = -3.6A, VGS = 0V, TJ = +25°C Reverse Recovery Time (Note 10) trr 21.7  ns IF = -2A, di/dt = 100A/µs, TJ = +25°C Reverse Rsecovery Charge (Note 10) Qrr  16.1  nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss  1,022  pF VDS = -15V, VGS = 0V f = 1MHz Output Capacitance Coss  267  pF Reverse Transfer Capacitance Crss  229  pF Total Gate Charge (Note 11) Qg  17.2  nC VGS = -5V VDS = -15V ID = -4.2A Total Gate Charge (Note 11) Qg  29.6  nC VGS = -10V Gate-Source Charge (Note 11) Qgs  2.8  nC Gate-Drain Charge (Note 11) Qgd  8.6  nC Turn-On Delay Time (Note 11) tD(on)  3.8  ns VDD = -15V, VGS = -10V ID = -1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 11) tr  6.5  ns Turn-Off Delay Time (Note 11) tD(off)  37.1  ns Turn-Off Fall Time (Note 11) tf  21.4  ns Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. 10 . For design aid only, not subject to production testing. 11 . Switching characteristics are independent of operating junction temperatures.

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ZXMP3A16G Document Number DS33575 Rev. 6 - 2 5 of 8 www.diodes.com March 2015 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G A D V A N C E I N F O R M A T I O N Typical Characteristics 0.1 1 10 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1.5 2.0 2.5 3.0 3.5 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 1 0.4 0.6 0.8 1.0 1.20.01 0.1 1 10 5V10V 4V 3.5V -V GS 2.5V 2V 3V Output Characteristics T = 25°C -V GS -I D D ra in C u rr e n t (A ) -V DS Drain-Source Voltage (V) 3.5V 3V 2V 1.5V 10V 2.5V Output Characteristics T = 150°C -I D D ra in C u rr e n t (A ) -V DS Drain-Source Voltage (V) Typical Transfer Characteristics -V DS = 10V T = 25°C T = 150°C -I D D ra in C u rr e n t (A ) -V GS Gate-Source Voltage (V) Normalised Curves v Temperature R DS(on) V GS = -10V I D = -5.4A V GS(th) V GS = V DS I D = -250uA N o rm a lis e d R D S (o n ) a n d V G S (t h ) Tj Junction Temperature (°C) 5V 10V 3V 2V 4V 3.5V 2.5V On-Resistance v Drain Current T = 25°C-V GS R D S (o n ) D ra in -S o u rc e O n -R e s is ta n c e ( Ω ) -I D Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -V SD Source-Drain Voltage (V) -I S D R e v e rs e D ra in C u rr e n t (A )

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ZXMP3A16G Document Number DS33575 Rev. 6 - 2 6 of 8 www.diodes.com March 2015 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G A D V A N C E I N F O R M A T I O N Typical Characteristics (continued) 0.1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800 C RSS C OSS C ISS V GS = 0V f = 1MHz C C a p a c it a n c e ( p F ) -V DS - Drain - Source Voltage (V) 0 5 10 15 20 25 30 0 2 4 6 8 10 I D = -4.2A V DS = -15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC)-V G S G a te -S o u rc e V o lt a g e ( V ) Test Circuits

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ZXMP3A16G Document Number DS33575 Rev. 6 - 2 7 of 8 www.diodes.com March 2015 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G A D V A N C E I N F O R M A T I O N Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1A 7°7° D bee1 b1 C E1L0°-10° Q E0.25SeatingPlaneGaugePlane Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1Y1 Y X C C1 Y2 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00