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Part Number ZXMP3A17DN8TA
Manufacturer Diodes Incorporated
Description MOSFET 2P-CH 30V 3.4A 8-SOIC
Datasheet ZXMP3A17DN8TA Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 83,536 piece(s)
Unit Price $ 0.8259 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 30 - Feb 4 (Choose Expedited Shipping)
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Part Number # ZXMP3A17DN8TA (Transistors - FETs, MOSFETs - Arrays) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For ZXMP3A17DN8TA specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add ZXMP3A17DN8TA with quantity into BOM. does NOT require any registration to request a quote of ZXMP3A17DN8TA.

ZXMP3A17DN8TA Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Datasheet ZXMP3A17DN8TADatasheet
Package8-SOIC (0.154", 3.90mm Width)
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs70 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs15.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 15V
Power - Max1.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

ZXMP3A17DN8TA Datasheet

Page 1

Page 2

SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting DEVICE MARKING ZXMP 3A17D ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 1 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP3A17DN8TA 7’‘ 12mm 500 units ZXMP3A17DN8TC 13’‘ 12mm 2500 units ORDERING INFORMATION SO8 Top view PINOUT

Page 3

ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) RθJA 100 °C/W Junction to Ambient (b)(e) RθJA 70 °C/W Junction to Ambient (b)(d) RθJA 60 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current@VGS=10V; TA=25C (b)(d) @VGS=10V; TA=70C (b)(d) @VGS=10V; TA=25C (a)(d) ID -4.4 -3.6 -3.4 A A A Pulsed Drain Current (c) IDM -16.2 A Continuous Source Current (Body Diode)(b) IS -2.5 A Pulsed Source Current (Body Diode)(c) ISM -16.2 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

Page 4

ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 3 100m 1 10 10m 100m 1 10 Single Pulse T amb =25°C One active die R DS(on) Limited 100µs 1ms 10ms 100ms 1s DC SafeOperatingArea -I D D ra in C u rr en t (A ) -V DS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Two active die One active die DeratingCurve Temperature (°C) M ax P o w er D is si p at io n (W ) 100µ 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 100 110 T amb =25°C One active die Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 T h er m al R es is ta n ce (° C /W ) Pulse Width(s) 100µ 1m 10m 100m 1 10 100 1k 1 10 100 Single Pulse T amb =25°C One active die PulsePower Dissipation Pulse Width(s) M ax im u m P o w er (W ) CHARACTERISTICS

Page 5

ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V Zero Gate Voltage Drain Current IDSS -1.0 A VDS=-30V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=20V, VDS=0V Gate-Source Threshold Voltage VGS(th) -1.0 V ID =-250A, VDS= VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.070 0.110   VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-2.5A Forward Transconductance (1)(3) gfs 6.4 S VDS=-15V,ID=-3.2A DYNAMIC (3) Input Capacitance Ciss 630 pF VDS=-15 V, VGS=0V, f=1MHz Output Capacitance Coss 113 pF Reverse Transfer Capacitance Crss 78 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 1.74 ns VDD =-15V, ID=-1A RG=6.0Ω, VGS=-10V Rise Time tr 2.87 ns Turn-Off Delay Time td(off) 29.2 ns Fall Time tf 8.72 ns Gate Charge Qg 8.28 nC VDS=-15V,VGS=-5V, ID=-3.2A Total Gate Charge Qg 15.8 nC VDS=-15V,VGS=-10V, ID=-3.2A Gate-Source Charge Qgs 1.84 nC Gate-Drain Charge Qgd 2.80 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -1.2 V TJ=25°C, IS=-2.5A, VGS=0V Reverse Recovery Time (3) trr 19.5 ns TJ=25°C, IF=-1.7A, di/dt= 100A/µs Reverse Recovery Charge (3) Qrr 16.3 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

Page 6

ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 5 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1 2 3 4 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 0.1 1 10 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 5V10V 4V 3.5V -V GS 2.5V 2V 3V Output Characteristics T = 25°C -V GS -I D D ra in C u rr en t (A ) -V DS Drain-Source Voltage (V) 5V 4V 3.5V 3V 2V 1.5V 10V 2.5V Output Characteristics T = 150°C -I D D ra in C u rr en t (A ) -V DS Drain-Source Voltage (V) Typical Transfer Characteristics -V DS = 10V T = 25°C T = 150°C -I D D ra in C u rr en t (A ) -V GS Gate-Source Voltage (V) NormalisedCurves vTemperature R DS(on) V GS = -10V I D = -3.2A V GS(th) V GS = V DS I D = -250uAN o rm a lis e d R D S (o n ) a n d V G S (t h ) Tj JunctionTemperature (°C) 5V 10V 3V 2V 4V 3.5V 2.5V On-ResistancevDrainCurrent T = 25°C -V GS R D S (o n ) D ra in -S o u rc e O n -R e si st a n ce (Ω ) -I D DrainCurrent (A) T = 150°C T = 25°C Source-DrainDiodeForwardVoltage -V SD Source-DrainVoltage (V) -I S D R e v e rs e D ra in C u rr e n t (A ) TYPICAL CHARACTERISTICS

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ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 6 0.1 1 10 0 200 400 600 800 1000 C RSS C OSS C ISS V GS = 0V f = 1MHz C C ap ac it an ce (p F) -V DS - Drain - Source Voltage (V) 0 5 10 15 20 0 2 4 6 8 10 I D = -3.2A V DS = -15V Gate-SourceVoltagevGateChargeCapacitancevDrain-SourceVoltage Q- Charge (nC)- V G S G at e- S o u rc e V o lt ag e (V ) TYPICAL CHARACTERISTICS

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December 14, 2020

The prices are very competitive, I've had a few transactions lately and all were smooth as glass. I'm a very satisfied customer!

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