ZXMP3A17DN8TA

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SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting DEVICE MARKING ZXMP 3A17D ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 1 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP3A17DN8TA 7’‘ 12mm 500 units ZXMP3A17DN8TC 13’‘ 12mm 2500 units ORDERING INFORMATION SO8 Top view PINOUT

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ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) RθJA 100 °C/W Junction to Ambient (b)(e) RθJA 70 °C/W Junction to Ambient (b)(d) RθJA 60 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t
10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current@VGS=10V; TA=25C (b)(d) @VGS=10V; TA=70C (b)(d) @VGS=10V; TA=25C (a)(d) ID -4.4 -3.6 -3.4 A A A Pulsed Drain Current (c) IDM -16.2 A Continuous Source Current (Body Diode)(b) IS -2.5 A Pulsed Source Current (Body Diode)(c) ISM -16.2 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

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ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 3 100m 1 10 10m 100m 1 10 Single Pulse T amb =25°C One active die R DS(on) Limited 100µs 1ms 10ms 100ms 1s DC SafeOperatingArea -I D D ra in C u rr en t (A ) -V DS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Two active die One active die DeratingCurve Temperature (°C) M ax P o w er D is si p at io n (W ) 100µ 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 100 110 T amb =25°C One active die Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 T h er m al R es is ta n ce (° C /W ) Pulse Width(s) 100µ 1m 10m 100m 1 10 100 1k 1 10 100 Single Pulse T amb =25°C One active die PulsePower Dissipation Pulse Width(s) M ax im u m P o w er (W ) CHARACTERISTICS

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ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V Zero Gate Voltage Drain Current IDSS -1.0 A VDS=-30V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=20V, VDS=0V Gate-Source Threshold Voltage VGS(th) -1.0 V ID =-250A, VDS= VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.070 0.110   VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-2.5A Forward Transconductance (1)(3) gfs 6.4 S VDS=-15V,ID=-3.2A DYNAMIC (3) Input Capacitance Ciss 630 pF VDS=-15 V, VGS=0V, f=1MHz Output Capacitance Coss 113 pF Reverse Transfer Capacitance Crss 78 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 1.74 ns VDD =-15V, ID=-1A RG=6.0Ω, VGS=-10V Rise Time tr 2.87 ns Turn-Off Delay Time td(off) 29.2 ns Fall Time tf 8.72 ns Gate Charge Qg 8.28 nC VDS=-15V,VGS=-5V, ID=-3.2A Total Gate Charge Qg 15.8 nC VDS=-15V,VGS=-10V, ID=-3.2A Gate-Source Charge Qgs 1.84 nC Gate-Drain Charge Qgd 2.80 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -1.2 V TJ=25°C, IS=-2.5A, VGS=0V Reverse Recovery Time (3) trr 19.5 ns TJ=25°C, IF=-1.7A, di/dt= 100A/µs Reverse Recovery Charge (3) Qrr 16.3 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

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ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 5 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1 2 3 4 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 0.1 1 10 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 5V10V 4V 3.5V -V GS 2.5V 2V 3V Output Characteristics T = 25°C -V GS -I D D ra in C u rr en t (A ) -V DS Drain-Source Voltage (V) 5V 4V 3.5V 3V 2V 1.5V 10V 2.5V Output Characteristics T = 150°C -I D D ra in C u rr en t (A ) -V DS Drain-Source Voltage (V) Typical Transfer Characteristics -V DS = 10V T = 25°C T = 150°C -I D D ra in C u rr en t (A ) -V GS Gate-Source Voltage (V) NormalisedCurves vTemperature R DS(on) V GS = -10V I D = -3.2A V GS(th) V GS = V DS I D = -250uAN o rm a lis e d R D S (o n ) a n d V G S (t h ) Tj JunctionTemperature (°C) 5V 10V 3V 2V 4V 3.5V 2.5V On-ResistancevDrainCurrent T = 25°C -V GS R D S (o n ) D ra in -S o u rc e O n -R e si st a n ce (Ω ) -I D DrainCurrent (A) T = 150°C T = 25°C Source-DrainDiodeForwardVoltage -V SD Source-DrainVoltage (V) -I S D R e v e rs e D ra in C u rr e n t (A ) TYPICAL CHARACTERISTICS

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ZXMP3A17DN8 ISSUE 1 - OCTOBER 2005 6 0.1 1 10 0 200 400 600 800 1000 C RSS C OSS C ISS V GS = 0V f = 1MHz C C ap ac it an ce (p F) -V DS - Drain - Source Voltage (V) 0 5 10 15 20 0 2 4 6 8 10 I D = -3.2A V DS = -15V Gate-SourceVoltagevGateChargeCapacitancevDrain-SourceVoltage Q- Charge (nC)- V G S G at e- S o u rc e V o lt ag e (V ) TYPICAL CHARACTERISTICS