Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 34V 19A TDSON-8
|
Package: 8-PowerTDFN |
Stock5,312 |
|
MOSFET (Metal Oxide) | 34V | 19A (Ta), 98A (Tc) | 4.5V, 10V | 2V @ 250µA | 41nC @ 10V | 3200pF @ 15V | ±20V | - | 2.5W (Ta), 57W (Tc) | 3.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 75V 80A TO220AB
|
Package: TO-220-3 |
Stock6,256 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | ±20V | - | 140W (Tc) | 9 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 4.9A DIRECTFET
|
Package: DirectFET? Isometric MZ |
Stock21,120 |
|
MOSFET (Metal Oxide) | 150V | 4.9A (Ta), 28A (Tc) | 10V | 5V @ 100µA | 36nC @ 10V | 1411pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 56 mOhm @ 5.6A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MZ | DirectFET? Isometric MZ |
||
NXP |
MOSFET N-CH 30V 120A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,568 |
|
MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | ±20V | - | 357W (Tc) | 1.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V 65A ATPAK
|
Package: ATPAK (2 leads+tab) |
Stock2,064 |
|
MOSFET (Metal Oxide) | 40V | 65A (Ta) | 4.5V, 10V | - | 54nC @ 10V | 2710pF @ 20V | ±20V | - | 50W (Tc) | 9.1 mOhm @ 33A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
ON Semiconductor |
MOSFET N-CH 40V 70A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock180,180 |
|
MOSFET (Metal Oxide) | 40V | 12.2A (Ta), 70A (Tc) | 5V, 10V | 3.5V @ 250µA | 45nC @ 10V | 2500pF @ 32V | ±20V | - | 3W (Ta), 100W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 250V 4.7A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,120 |
|
MOSFET (Metal Oxide) | 250V | 4.7A (Tc) | 10V | 5V @ 250µA | 27nC @ 10V | 780pF @ 25V | ±30V | - | 2.5W (Ta), 55W (Tc) | 1.1 Ohm @ 2.35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 25V 2.5A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,184 |
|
MOSFET (Metal Oxide) | 25V | 2.5A (Ta) | 4.5V, 10V | 2V @ 250µA | 1.8nC @ 5V | 115pF @ 20V | ±20V | - | 1.04W (Ta), 20.8W (Tc) | 95 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 200V 18A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock9,672 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,784 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4.5V @ 250µA | 17nC @ 10V | 340pF @ 25V | ±30V | - | 50W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 30V 69A U8FL
|
Package: 8-PowerWDFN |
Stock4,720 |
|
MOSFET (Metal Oxide) | 30V | 18.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 10V | 1740pF @ 12V | ±20V | - | 3.2W (Ta), 21W (Tc) | 4.7 mOhm @ 23A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET N-CH 40V 20A 8WDFN
|
Package: 8-PowerWDFN |
Stock4,864 |
|
MOSFET (Metal Oxide) | 40V | 20A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 45µA | 2nC @ 4.5V | 1600pF @ 25V | ±20V | - | 3.2W (Ta), 55W (Tc) | 3.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 18A 8ULTRASO
|
Package: 3-PowerSMD, Flat Leads |
Stock7,696 |
|
MOSFET (Metal Oxide) | 20V | 18A (Ta), 45A (Tc) | 2.5V, 4.5V | 1.6V @ 250µA | 43nC @ 10V | 4630pF @ 10V | ±12V | - | 2.1W (Ta), 60W (Tc) | 4 mOhm @ 20A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | UltraSO-8? | 3-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 60V 0.31A 3-DFN
|
Package: 3-UDFN |
Stock4,368 |
|
MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 1.8V, 4V | 1V @ 250µA | 500nC @ 4.5V | 31pF @ 25V | ±20V | - | 480mW (Ta) | 2 Ohm @ 100mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
||
STMicroelectronics |
MOSFET N-CH 1200V 45A HIP247
|
Package: TO-247-3 |
Stock5,488 |
|
SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | +25V, -10V | - | 270W (Tc) | 100 mOhm @ 20A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247? | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 50A TO-252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,016 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2800pF @ 15V | ±20V | - | 83W (Tc) | 6.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microsemi Corporation |
MOSFET N-CH 1000V 28A TO-264
|
Package: TO-264-3, TO-264AA |
Stock7,536 |
|
MOSFET (Metal Oxide) | 1000V | 28A (Tc) | 10V | 5V @ 2.5mA | 186nC @ 10V | 5185pF @ 25V | ±30V | - | 690W (Tc) | 350 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Diodes Incorporated |
MOSFET NCH 60V 80A TO252
|
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock8,052 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | - | 3V @ 250µA | 35.2nC @ 10V | 1926pF @ 30V | - | - | 2W (Ta) | 12 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
||
Vishay Siliconix |
MOSFET N-CH 100V 2.3A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock988,500 |
|
MOSFET (Metal Oxide) | 100V | 2.3A (Tc) | 10V | 2.9V @ 250µA | 10.4nC @ 10V | 190pF @ 50V | ±20V | - | 1.25W (Ta), 2.5W (Tc) | 234 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET N-CH 60V 2.2A PICOSTAR
|
Package: 3-XFDFN |
Stock22,116 |
|
MOSFET (Metal Oxide) | 60V | 2.2A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 14nC @ 10V | 777pF @ 30V | ±20V | - | 500mW (Ta) | 65 mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
Diodes Incorporated |
MOSFET N-CH 60V SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,096 |
|
MOSFET (Metal Oxide) | 60V | 470mA (Ta) | 3V, 5V | 2V @ 1mA | 0.74nC @ 5V | 12.9pF @ 12V | ±12V | - | 390mW (Ta) | 1.8 Ohm @ 150mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
PCH -20V -3.5A MIDDLE POWER MOSF
|
Package: SC-96 |
Stock5,760 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 4.5V | 1.2V @ 1mA | 6.5nC @ 4.5V | 460pF @ 10V | ±8V | - | 1W (Tc) | 59 mOhm @ 3.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 8A HSMT8
|
Package: 8-PowerVDFN |
Stock6,496 |
|
MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 14.5nC @ 10V | 660pF @ 15V | ±20V | - | 2W (Ta) | 15.2 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
||
STMicroelectronics |
MOSFET N-CH 500V 3A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock466,656 |
|
MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 4.5V @ 50µA | 12nC @ 10V | 310pF @ 25V | ±30V | - | 45W (Tc) | 2.7 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB
|
Package: TO-220-3 |
Stock219,084 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | ±20V | - | 375W (Tc) | 2.5 mOhm @ 170A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220
|
Package: TO-220-3 |
Stock200,988 |
|
MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
IXYS |
MOSFET N-CH 200V 16A TO-268
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock6,720 |
|
MOSFET (Metal Oxide) | 200V | 16A (Tc) | - | - | 208nC @ 5V | 5500pF @ 25V | ±20V | Depletion Mode | 695W (Tc) | 73 mOhm @ 8A, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
STMicroelectronics |
MOSFET N-CH 650V 24A TO220
|
Package: TO-220-3 |
Stock18,804 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 250µA | 41.5nC @ 10V | 1790pF @ 100V | ±25V | - | 190W (Tc) | 140 mOhm @ 12A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 1.1A 4-DIP
|
Package: 4-DIP (0.300", 7.62mm) |
Stock15,828 |
|
MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 1.3W (Ta) | 500 mOhm @ 660mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 30V 4.8A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock614,640 |
|
MOSFET (Metal Oxide) | 30V | 4.8A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 35nC @ 10V | - | ±12V | - | 1W (Ta), 1.7W (Tc) | 45 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |