Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 600V 0.8A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock24,000 |
|
MOSFET (Metal Oxide) | 600V | 800mA (Ta) | 10V | 5.5V @ 200µA | 17nC @ 10V | 600pF @ 25V | ±20V | - | 1.8W (Ta) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 650V 15A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,592 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 3.9V @ 675µA | 63nC @ 10V | 1660pF @ 25V | ±20V | - | 156W (Tc) | 280 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH 55V 31A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,936 |
|
MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | - | 110W (Tc) | 65 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET P-CH 100V SMD1
|
Package: TO-267AB |
Stock7,984 |
|
MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | - | ±20V | - | 4W (Ta), 125W (Tc) | 200 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock120,012 |
|
MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 96nC @ 10V | 4800pF @ 25V | ±20V | - | 1.2W (Ta), 77W (Tc) | 9.5 mOhm @ 28A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 30V 3.5A MCPH6
|
Package: 6-SMD, Flat Leads |
Stock3,536 |
|
MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | - | 5nC @ 10V | 250pF @ 10V | ±20V | - | 1.5W (Ta) | 98 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
||
NXP |
MOSFET N-CH 55V 100A TO220AB
|
Package: TO-220-3 |
Stock3,232 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 124nC @ 10V | 7750pF @ 25V | ±16V | - | 204W (Tc) | 5.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock19,200 |
|
MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1430pF @ 10V | ±8V | - | 700mW (Ta) | 40 mOhm @ 2.8A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 71A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock19,200 |
|
MOSFET (Metal Oxide) | 30V | 71A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 45nC @ 10V | 1700pF @ 15V | ±20V | - | 70W (Tc) | 8.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 100V 200A PLUS220SMD
|
Package: PLUS-220SMD |
Stock3,776 |
|
MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 4.5V @ 250µA | 152nC @ 10V | 9400pF @ 25V | ±30V | - | 550W (Tc) | 5.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
IXYS |
MOSFET N-CH 600V 22A PLUS220-SMD
|
Package: PLUS-220SMD |
Stock3,216 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 5.5V @ 250µA | 62nC @ 10V | 3600pF @ 25V | ±30V | - | 400W (Tc) | 350 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT223
|
Package: TO-261-4, TO-261AA |
Stock3,088 |
|
MOSFET (Metal Oxide) | 59V | 2.6A (Ta) | 3V, 10V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 35V | ±15V | - | 1.69W (Ta) | 125 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
NXP |
MOSFET N-CH 55V 5.5A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock5,216 |
|
MOSFET (Metal Oxide) | 55V | 5.5A (Tc) | 4.5V, 10V | 2V @ 1mA | 5.3nC @ 5V | 320pF @ 25V | ±15V | - | 8W (Tc) | 137 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 20V 7.5A 6TSOP
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,616 |
|
MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 1.8V, 2.5V | 0.75V @ 30µA | 4.7nC @ 2.5V | 1347pF @ 10V | ±8V | - | 2W (Ta) | 22 mOhm @ 7.5A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP6-6 | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 600V 38A I4-PAC-5
|
Package: i4-Pac?-5 (3 leads) |
Stock2,000 |
|
MOSFET (Metal Oxide) | 600V | 41A (Tc) | 10V | 3.9V @ 3mA | 250nC @ 10V | - | ±20V | Super Junction | - | 70 mOhm @ 25A, 10V | -40°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 (3 leads) |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
Package: 8-PowerTDFN |
Stock5,264 |
|
MOSFET (Metal Oxide) | 40V | - | 10V | 3.5V @ 250µA | 47nC @ 10V | 3300pF @ 25V | ±20V | - | 3.8W (Ta), 106W (Tc) | 1.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4A TO262F
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,152 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.1V @ 250µA | 6nC @ 10V | 263pF @ 100V | ±30V | - | 25W (Tc) | 900 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,520 |
|
MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 743pF @ 100V | ±30V | - | 83W (Tc) | 600 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock516,972 |
|
MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 10V | 2.5V @ 250µA | 12nC @ 4.5V | 975pF @ 25V | ±20V | - | 1.38W (Ta) | 250 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V TO-220AB-3
|
Package: TO-220-3 |
Stock13,320 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 735pF @ 25V | ±25V | - | 130W (Tc) | 850 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 140A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,120 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.8V @ 208µA | 166nC @ 10V | 12100pF @ 40V | ±20V | - | 300W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock5,408 |
|
MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 4.5V @ 250µA | 193nC @ 10V | 13600pF @ 50V | ±20V | - | 315W (Tc) | 2.1 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab) Variant |
||
Rohm Semiconductor |
NCH 30V 13.5A MIDDLE POWER MOSFE
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,768 |
|
MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 10V | 2.5V @ 1mA | 8.3nC @ 4.5V | 680pF @ 15V | ±20V | - | 2W (Tc) | 14.6 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 30V 750MA DFN
|
Package: 3-XFDFN |
Stock467,100 |
|
MOSFET (Metal Oxide) | 30V | 750mA (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | 64.3pF @ 25V | ±8V | - | 470mW (Ta) | 460 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 38A SO8FL
|
Package: 8-PowerTDFN |
Stock17,232 |
|
MOSFET (Metal Oxide) | 30V | 7.2A (Ta), 38A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 15.2nC @ 10V | 770pF @ 15V | ±20V | - | 750mW (Ta) | 9.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 800V 14A TO-220FP
|
Package: TO-220-3 Full Pack |
Stock7,692 |
|
MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 5V @ 100µA | 32nC @ 10V | 1100pF @ 100V | ±30V | - | 35W (Tc) | 375 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 100V 120A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock45,006 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | ±20V | - | 300W (Tc) | 2.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Cree/Wolfspeed |
MOSFET NCH 1.7KV 72A TO247
|
Package: TO-247-3 |
Stock10,692 |
|
SiCFET (Silicon Carbide) | 1700V | 72A (Tc) | 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1kV | +25V, -10V | - | 520W (Tc) | 70 mOhm @ 50A, 20V | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 34A EP TO220AB
|
Package: TO-220-3 |
Stock14,874 |
|
MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 4V @ 250µA | 55nC @ 10V | 2370pF @ 100V | ±25V | - | 250W (Tc) | 87 mOhm @ 17A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 47A TO-220
|
Package: TO-220-3 |
Stock33,480 |
|
MOSFET (Metal Oxide) | 60V | 47A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | ±25V | - | 160W (Tc) | 26 mOhm @ 23.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |