Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock61,800 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | ±20V | - | 170W (Tc) | 6.5 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 45A TO-220
|
Package: TO-220-3 |
Stock7,744 |
|
MOSFET (Metal Oxide) | 55V | 45A (Tc) | 5V, 10V | 2.2V @ 30µA | 75nC @ 10V | 3600pF @ 25V | ±16V | - | 65W (Tc) | 13.4 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 100V 0.68A SOT223
|
Package: TO-261-4, TO-261AA |
Stock2,016 |
|
MOSFET (Metal Oxide) | 100V | 680mA (Ta) | 4.5V, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | ±20V | - | 1.8W (Ta) | 1.8 Ohm @ 680mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 20V 37A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,424 |
|
MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | ±20V | - | 35W (Tc) | 15 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,448 |
|
MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 4 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics America |
MOSFET N-CH 500V 12A LDPAK
|
Package: SC-83 |
Stock6,160 |
|
MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | - | 27.8nC @ 10V | 1050pF @ 25V | ±30V | - | 100W (Tc) | 700 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
||
Vishay Siliconix |
MOSFET P-CH 12V 10A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,360 |
|
MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 900mV @ 600µA | 165nC @ 5V | - | ±8V | - | 1.5W (Ta) | 6.5 mOhm @ 14A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 15.6A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,440 |
|
MOSFET (Metal Oxide) | 100V | 15.6A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 780pF @ 25V | ±25V | - | 2.5W (Ta), 50W (Tc) | 100 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 9.3A I2PAK
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,952 |
|
MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | ±25V | - | 3.75W (Ta), 40W (Tc) | 210 mOhm @ 4.65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 250V 44A TO-247AC
|
Package: TO-247-3 |
Stock9,792 |
|
MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 3860pF @ 25V | ±20V | - | 380W (Tc) | 60 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock13,776 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | ±10V | - | - | 540 mOhm @ 3.4A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 25V 60A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock834,096 |
|
MOSFET (Metal Oxide) | 25V | 60A (Tc) | 5V, 10V | 1.8V @ 250µA | 22nC @ 5V | 2050pF @ 16V | ±20V | - | 70W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 100V 45A TO220-3
|
Package: TO-220-3 Full Pack |
Stock3,840 |
|
MOSFET (Metal Oxide) | 100V | 44A (Tc) | 6V, 10V | 3.8V @ 49µA | 37nC @ 10V | 2730pF @ 50V | ±20V | - | 36W (Tc) | 8.3 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 30V 65A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,352 |
|
MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | ±20V | - | 75W (Tc) | 10 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A 5DFN
|
Package: 4-VSFN Exposed Pad |
Stock270,000 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 240W (Tc) | 98 mOhm @ 15.4A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 57A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,232 |
|
MOSFET (Metal Oxide) | 55V | 57A (Tc) | 10V | 4V @ 1mA | - | 2000pF @ 25V | ±16V | - | 125W (Tc) | 18 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI506
|
Package: 8-PowerTDFN |
Stock6,080 |
|
MOSFET (Metal Oxide) | 30V | 35.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 123nC @ 10V | 7019pF @ 15V | ±20V | - | 2.5W (Ta) | 1.35 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,312 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 7.7nC @ 4.5V | 680pF @ 25V | ±20V | - | 40W (Tc) | 9 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1.5KV 4A TO268
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock4,400 |
|
MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 5V @ 250µA | 44.5nC @ 10V | 1576pF @ 25V | ±30V | - | 280W (Tc) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220AB
|
Package: TO-220-3 |
Stock23,040 |
|
MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 527pF @ 100V | ±30V | - | 156W (Tc) | 850 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET P-CH 45V 7A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock289,488 |
|
MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | - | 47.6nC @ 5V | 4100pF @ 10V | ±20V | - | 2W (Ta) | 27 mOhm @ 7A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 60V 35A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,598,280 |
|
MOSFET (Metal Oxide) | 60V | 35A (Tc) | 4.5V, 10V | 1V @ 250µA | 33nC @ 4.5V | 1700pF @ 25V | ±16V | - | 80W (Tc) | 17 mOhm @ 17.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6.3A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock42,648 |
|
MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 500pF @ 15V | ±8V | - | 3W (Ta) | 45 mOhm @ 6.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
STMicroelectronics |
MOSFET N-CH 55V 200A POWERSO-10
|
Package: PowerSO-10 Exposed Bottom Pad |
Stock14,928 |
|
MOSFET (Metal Oxide) | 55V | 200A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | ±20V | - | 300W (Tc) | 2.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
||
Infineon Technologies |
MOSFET N-CH 250V 25A TO220-3
|
Package: TO-220-3 |
Stock390,000 |
|
MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | ±20V | - | 136W (Tc) | 60 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 15.2A 8TSDSON
|
Package: 8-PowerTDFN |
Stock235,080 |
|
MOSFET (Metal Oxide) | 200V | 15.2A (Tc) | 10V | 4V @ 30µA | 11.6nC @ 10V | 920pF @ 100V | ±20V | - | 62.5W (Tc) | 90 mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 40V 6-UDFN
|
Package: 6-UDFN Exposed Pad |
Stock28,326 |
|
MOSFET (Metal Oxide) | 40V | 8A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 19.1nC @ 10V | 1060pF @ 20V | ±20V | - | 660mW (Ta) | 20 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
||
Microchip Technology |
MOSFET P-CH 80V 0.28A TO92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock15,396 |
|
MOSFET (Metal Oxide) | 80V | 280mA (Tj) | 10V | 4.5V @ 1mA | - | 150pF @ 25V | ±30V | - | 1W (Tc) | 5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock14,160 |
|
MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | - | 3.8W (Ta), 110W (Tc) | 60 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8
|
Package: PowerPAK? SO-8 |
Stock34,476 |
|
MOSFET (Metal Oxide) | 100V | 5A (Ta) | 6V, 10V | 4V @ 250µA | 30nC @ 10V | - | ±20V | - | 1.9W (Ta) | 34 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |