Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 75V 75A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock30,000 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | ±20V | - | 170W (Tc) | 9.4 mOhm @ 53A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 12V 84A I-PAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock66,852 |
|
MOSFET (Metal Oxide) | 12V | 84A (Tc) | 2.8V, 4.5V | 1.9V @ 250µA | 41nC @ 5V | 2490pF @ 6V | ±12V | - | 88W (Tc) | 8.5 mOhm @ 15A, 4.5V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
|
Package: 8-VDFN Exposed Pad |
Stock3,872 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta), 24A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22nC @ 10V | 1086pF @ 15V | ±20V | - | 3.1W (Ta), 23W (Tc) | 8.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-VDFN Exposed Pad |
||
Global Power Technologies Group |
MOSFET N-CH 500V 8A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,624 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 5V @ 250µA | 21nC @ 10V | 937pF @ 25V | ±30V | - | 120W (Tc) | 850 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 250V 12A TO-220FN
|
Package: TO-220-3 Full Pack |
Stock4,080 |
|
MOSFET (Metal Oxide) | 250V | 12A (Ta) | 10V | 4V @ 1mA | 62nC @ 10V | 1224pF @ 10V | ±30V | - | 40W (Tc) | 210 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 30V 75A TO220AB
|
Package: TO-220-3 |
Stock390,960 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V | 2V @ 250µA | 75nC @ 5V | 5635pF @ 25V | ±20V | - | 2.5W (Ta), 125W (Tc) | 8 mOhm @ 37.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 100V 13A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,760 |
|
MOSFET (Metal Oxide) | 100V | 13A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | ±20V | - | 64.7W (Ta) | 165 mOhm @ 6.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock111,948 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,560 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | ±20V | - | 48W (Tc) | 77 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 60V 80A TO-247
|
Package: TO-247-3 |
Stock18,852 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 250µA | 189nC @ 10V | 7600pF @ 25V | ±20V | - | 250W (Tc) | 10 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
IC POWER MOSFET 1200V HIP247
|
Package: - |
Stock4,992 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 800V 23A TO-268(D3)
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock5,616 |
|
MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 4.5V @ 3mA | 130nC @ 10V | 4900pF @ 25V | ±30V | - | 500W (Tc) | 420 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 600V 50A TO268
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock4,752 |
|
MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 5V @ 4mA | 94nC @ 10V | 6300pF @ 25V | ±30V | - | 1040W (Tc) | 145 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 600V 18A TO-247
|
Package: TO-247-3 |
Stock6,304 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 4.5V @ 1.5mA | 35nC @ 10V | 1440pF @ 25V | ±30V | - | 320W (Tc) | 230 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
IXYS |
MOSFET N-CH 300V 60A TO-247
|
Package: TO-247-3 |
Stock4,384 |
|
MOSFET (Metal Oxide) | 300V | 60A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 38A 8SOP
|
Package: 8-PowerVDFN |
Stock2,512 |
|
MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | ±20V | - | 1.6W (Ta), 34W (Tc) | 6 mOhm @ 19A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 200V 3.8A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock470,568 |
|
MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 10V | 6V @ 250µA | 3.82nC @ 10V | 215pF @ 25V | ±30V | - | 2.1W (Ta), 25W (Tc) | 700 mOhm @ 3.8A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Central Semiconductor Corp |
MOSFET P-CH 30V 0.45A SOT883
|
Package: SC-101, SOT-883 |
Stock3,280 |
|
MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.88nC @ 4.5V | 55pF @ 25V | 8V | - | 100mW (Ta) | 1.1 Ohm @ 430mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
||
Infineon Technologies |
MOSFET N-CH 200V 25A TO-220AB
|
Package: TO-220-3 |
Stock36,504 |
|
MOSFET (Metal Oxide) | 200V | 25A (Tc) | 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | ±20V | - | 144W (Tc) | 72.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
Package: SC-100, SOT-669 |
Stock3,344 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 65nC @ 10V | 4044pF @ 15V | ±20V | - | 179W (Tc) | 1.55 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 29A LFPAK
|
Package: SOT-1210, 8-LFPAK33 (5-Lead) |
Stock5,632 |
|
MOSFET (Metal Oxide) | 100V | 29A (Tc) | 5V | 2.1V @ 1mA | 24.7nC @ 5V | 2844pF @ 25V | ±10V | - | 79W (Tc) | 34 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
||
Sanken |
MOSFET N-CH 60V 9A 8DFN
|
Package: 8-PowerTDFN |
Stock4,624 |
|
MOSFET (Metal Oxide) | 60V | 9A (Ta) | 4.5V, 10V | 2.5V @ 650µA | 38.6nC @ 10V | 2520pF @ 25V | ±20V | - | 3.1W (Ta), 59W (Tc) | 8.9 mOhm @ 23.6A, 10V | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A UFM
|
Package: 3-SMD, Flat Leads |
Stock29,628 |
|
MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | - | - | 137pF @ 15V | ±20V | - | 500mW (Ta) | 240 mOhm @ 650mA, 10V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock35,106 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 41.5nC @ 10V | 2400pF @ 15V | ±20V | - | 103W (Tc) | 4.1 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 500V 26A TO-220AB
|
Package: TO-220-3 |
Stock14,544 |
|
MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 4V @ 250µA | 86nC @ 10V | 1980pF @ 100V | ±30V | - | 250W (Tc) | 145 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 20V 2.6A SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock108,000 |
|
MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 5.3nC @ 4.5V | 250pF @ 10V | ±12V | - | 1.08W (Ta) | 110 mOhm @ 2.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N CH 60V 172A TO247
|
Package: TO-247-3 |
Stock28,800 |
|
MOSFET (Metal Oxide) | 60V | 172A (Tc) | 6V, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | ±20V | - | 230W (Tc) | 3.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Diodes Incorporated |
MOSFET P-CH 60V 280MA TO92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock39,924 |
|
MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 18V | ±20V | - | 700mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET N-CH 100V 40A TSDSON-8
|
Package: 8-PowerTDFN |
Stock4,240 |
|
MOSFET (Metal Oxide) | 100V | 8A (Ta), 40A (Tc) | 6V, 10V | 3.5V @ 12µA | 25nC @ 10V | 1700pF @ 50V | ±20V | - | 2.1W (Ta), 63W (Tc) | 16 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 12A 8DFN
|
Package: 8-PowerSMD, Flat Leads |
Stock669,060 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta), 35A (Tc) | 6V, 10V | 3V @ 250µA | 39nC @ 10V | 2600pF @ 15V | ±25V | - | 3.1W (Ta), 29W (Tc) | 14 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |