Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 105A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,744 |
|
MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | ±20V | - | 110W (Tc) | 6 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 47A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,552 |
|
MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 3.8W (Ta), 110W (Tc) | 22 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 650V 1.8A TO-220AB
|
Package: TO-220-3 |
Stock2,912 |
|
MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | ±20V | - | 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
ON Semiconductor |
MOSFET 30V 57A NFETU8FL
|
Package: 8-PowerWDFN |
Stock702,000 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 3.8A I2PAK
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,136 |
|
MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 5V, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | ±20V | - | 3.13W (Ta), 45W (Tc) | 1.35 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET P-CH 450V 0.045A TO92-3
|
Package: E-Line-3 |
Stock6,704 |
|
MOSFET (Metal Oxide) | 450V | 45mA (Ta) | 10V | 4.5V @ 1mA | - | 120pF @ 25V | ±20V | - | 700mW (Ta) | 150 Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 120A TO-220
|
Package: TO-220-3 |
Stock7,984 |
|
MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | ±20V | - | 230W (Tc) | 6.4 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 100V 14A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock25,104 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | ±20V | - | 3.8W (Ta), 79W (Tc) | 200 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRANSISTOR P-CH BARE DIE
|
Package: - |
Stock3,472 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
MOSFET N-CH 800V 31A SOT-227
|
Package: SOT-227-4, miniBLOC |
Stock7,856 |
|
MOSFET (Metal Oxide) | 800V | 31A | 10V | 5V @ 2.5mA | 303nC @ 10V | 9326pF @ 25V | ±30V | - | 543W (Tc) | 210 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 600V 20A TO-268
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock6,176 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4.5V @ 4mA | 90nC @ 10V | 3300pF @ 25V | ±30V | - | 300W (Tc) | 350 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 600V 60A TO3P
|
Package: TO-3P-3, SC-65-3 |
Stock7,312 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 4.5V @ 8mA | 143nC @ 10V | 5800pF @ 25V | ±30V | - | 890W (Tc) | 55 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
IXYS |
MOSFET N-CH 500V 5A TO-252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,832 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 5V @ 1mA | 6.9nC @ 10V | 370pF @ 25V | ±30V | - | 114W (Tc) | 1.65 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 40V 10A TP
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,912 |
|
MOSFET (Metal Oxide) | 40V | 10A (Ta) | 1.8V, 4.5V | - | 8nC @ 4.5V | 650pF @ 20V | ±10V | - | 1W (Ta), 15W (Tc) | 112 mOhm @ 5A, 4.5V | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET P-CH 1.8A 60V CPH3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,552 |
|
MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4V, 10V | 2.6V @ 1mA | 6nC @ 10V | 262pF @ 20V | ±20V | - | 1.2W (Ta) | 250 mOhm @ 1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 300V 210A PLUS264
|
Package: TO-264-3, TO-264AA |
Stock6,880 |
|
MOSFET (Metal Oxide) | 300V | 210A (Tc) | 10V | 5V @ 8mA | 268nC @ 10V | 16200pF @ 25V | ±20V | - | 1890W (Tc) | 14.5 mOhm @ 105A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS264? | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 500V 55A SOT227B
|
Package: SOT-227-4, miniBLOC |
Stock7,648 |
|
MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 5.5V @ 8mA | 195nC @ 10V | 6700pF @ 25V | ±20V | - | 600W (Tc) | 85 mOhm @ 27.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
120V/110A TRENCHT2 POWER MOSFET
|
Package: TO-220-3 |
Stock6,456 |
|
MOSFET (Metal Oxide) | 120V | 110A (Tc) | 10V | 4.5V @ 250µA | 120nC @ 10V | 6570pF @ 25V | ±20V | - | 517W (Tc) | 14 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.7A TO220FP
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock36,012 |
|
MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | 670pF @ 25V | ±20V | - | 42W (Tc) | 160 mOhm @ 5.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
ON Semiconductor |
MOSFET N-CH 600V 7.1A TO220FP
|
Package: TO-220-3 Full Pack |
Stock60,360 |
|
MOSFET (Metal Oxide) | 600V | 7.1A (Tc) | 10V | 4.5V @ 100µA | 47nC @ 10V | 1107pF @ 25V | ±30V | - | 35W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET N-CH 200V 70A TO220
|
Package: TO-220-2 Full Pack |
Stock6,168 |
|
MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 5V @ 1mA | 125nC @ 10V | 6900pF @ 25V | ±30V | - | 2.23W (Ta), 40W (Tc) | 42.7 mOhm @ 35A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 50V 18A TO-220AB
|
Package: TO-220-3 |
Stock103,464 |
|
MOSFET (Metal Oxide) | 50V | 18A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 900pF @ 25V | ±20V | - | 74W (Tc) | 140 mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 40A POWER33
|
Package: 8-PowerTDFN |
Stock6,672 |
|
MOSFET (Metal Oxide) | 25V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 3V @ 1mA | 68nC @ 10V | 4410pF @ 13V | ±20V | - | 2.3W (Ta), 59W (Tc) | 2 mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 3.4A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock113,760 |
|
MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 3.5nC @ 10V | 205pF @ 15V | ±20V | - | 3W (Ta) | 130 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 45A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock172,596 |
|
MOSFET (Metal Oxide) | 75V | 45A (Tc) | 10V | 4V @ 1mA | 48nC @ 10V | 2385pF @ 25V | ±20V | - | 158W (Tc) | 26 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 25V 81A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock8,652 |
|
MOSFET (Metal Oxide) | 25V | 81A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 15nC @ 4.5V | 1470pF @ 13V | ±20V | - | 63W (Tc) | 5.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1000V 15A TO-247
|
Package: TO-247-3 |
Stock19,104 |
|
MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 6.5V @ 4mA | 64nC @ 10V | 3250pF @ 25V | ±30V | - | 690W (Tc) | 1.05 Ohm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
EPC |
TRANS GAN 60V 1A BUMPED DIE
|
Package: Die |
Stock342,840 |
|
GaNFET (Gallium Nitride) | 60V | 1A (Ta) | 5V | 2.5V @ 800µA | 1.15nC @ 5V | 115pF @ 30V | +6V, -4V | - | - | 45 mOhm @ 1A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
STMicroelectronics |
MOSFET N-CH 900V 9.2A TO-247
|
Package: TO-247-3 |
Stock116,880 |
|
MOSFET (Metal Oxide) | 900V | 9.2A (Tc) | 10V | 4.5V @ 100µA | 115nC @ 10V | 3000pF @ 25V | ±30V | - | 200W (Tc) | 980 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,757,004 |
|
MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.8V, 4.5V | 850mV @ 250µA | 12nC @ 4.5V | - | ±8V | - | 750mW (Ta) | 31 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |