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IXYS |
IGBT 600V 75A 280W TO264
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 280W
- Switching Energy: 1mJ (off)
- Input Type: Standard
- Gate Charge: 190nC
- Td (on/off) @ 25°C: 50ns/70ns
- Test Condition: 480V, 40A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264AA(IXSK)
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Package: TO-264-3, TO-264AA |
Stock6,720 |
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IXYS |
IGBT 1200V 40A 150W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 150W
- Switching Energy: 6.5mJ (off)
- Input Type: Standard
- Gate Charge: 63nC
- Td (on/off) @ 25°C: 28ns/400ns
- Test Condition: 800V, 20A, 47 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock4,048 |
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IXYS |
IGBT 650V 38A 200W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 38A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: 200W
- Switching Energy: 270µJ (on), 230µJ (off)
- Input Type: Standard
- Gate Charge: 19nC
- Td (on/off) @ 25°C: 15ns/68ns
- Test Condition: 400V, 15A, 20 Ohm, 15V
- Reverse Recovery Time (trr): 110ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock3,120 |
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IXYS |
1700V/108A HIGH VOLTAGE XPT IGB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 108A
- Current - Collector Pulsed (Icm): 255A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
- Power - Max: 937W
- Switching Energy: 5.9mJ (on), 3.3mJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 28ns/150ns
- Test Condition: 850V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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Package: TO-247-3 |
Stock6,832 |
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IXYS |
IGBT 75A 600V SOT-227B
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Power - Max: 300W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 200µA
- Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Package: SOT-227-4, miniBLOC |
Stock2,256 |
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IXYS |
MOD IGBT BST/CHOP 1200V ECOPAC2
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 49A
- Power - Max: 208W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 1.1mA
- Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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Package: ECO-PAC2 |
Stock6,080 |
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IXYS |
IGBT MOD TRENCH SIX-PACK E3
- IGBT Type: Trench
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 110A
- Power - Max: 355W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Current - Collector Cutoff (Max): 4mA
- Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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Package: E2 |
Stock2,448 |
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IXYS |
IGBT MODULE 1200V 28A HEX
- IGBT Type: PT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 28A
- Power - Max: 100W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 16A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MiniPack2
- Supplier Device Package: MiniPack2
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Package: MiniPack2 |
Stock2,208 |
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IXYS |
MOSFET N-CH 500V 30A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock390,000 |
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IXYS |
MOSFET N-CH 250V 50A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,984 |
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IXYS |
MOSFET N-CH 800V 750MA TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,616 |
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IXYS |
MOSFET N-CH 600V 10A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,200 |
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IXYS |
MOSFET N-CH 1000V 1.6A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,320 |
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IXYS |
MOSFET N-CH 40V 120A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,168 |
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IXYS |
850V/20A ULTRA JUNCTION X-CLASS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,784 |
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IXYS |
MOSFET N-CH 500V 64A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock14,400 |
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IXYS |
MOSFET N-CH 300V 150A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1300W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,480 |
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IXYS |
MOSFET 2N-CH 250V 30A I4-PAC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Power - Max: 125W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock4,960 |
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IXYS |
SCR THY PHASE LEG 1400V WC-501
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-501
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Package: WC-501 |
Stock7,456 |
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IXYS |
MOD THYRISTOR DUAL 1200V Y1-CU
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 520A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
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Package: Y1-CU |
Stock6,400 |
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IXYS |
MOD THYRISTOR/DIODE 1200V Y1-CU
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 520A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
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Package: Y1-CU |
Stock4,896 |
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IXYS |
MODULE AC CONTROL 800V ECO-PAC1
- Structure: 1-Phase Controller - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 51A
- Current - On State (It (RMS)) (Max): 81A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1070A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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Package: Module |
Stock2,112 |
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IXYS |
DIODE SCHOTTKY 100V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AC, SMA |
Stock4,880 |
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IXYS |
DIODE MODULE 3.2KV 22.9A UGE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3200V
- Current - Average Rectified (Io): 22.9A
- Voltage - Forward (Vf) (Max) @ If: 2.72V @ 55A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 3200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: UGE
- Supplier Device Package: UGE
- Operating Temperature - Junction: -
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Package: UGE |
Stock6,384 |
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IXYS |
DIODE MODULE 1.6KV 60A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.01V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 230ns
- Current - Reverse Leakage @ Vr: 200µA @ 1600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Package: SOT-227-4, miniBLOC |
Stock2,928 |
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IXYS |
DIODE ARRAY GP 400V 10A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock4,320 |
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IXYS |
DIODE ARRAY GP 800V 11A TO263
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io) (per Diode): 11A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Supplier Device Package: TO-263 (D2Pak)
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Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Stock4,832 |
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IXYS |
DIODE BRIDGE 1200V 75A
- Diode Type: Three Phase (Braking)
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1A-PAK
- Supplier Device Package: V1A-PAK
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Package: V1A-PAK |
Stock3,200 |
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IXYS |
3 PHASE/FULL WAVE 74A BRDG RECT
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 74A
- Voltage - Forward (Vf) (Max) @ If: 2.71V @ 30A
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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Package: ECO-PAC1 |
Stock3,952 |
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IXYS |
IC MOSFET DRIVER SYNC BUCK 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 5.5 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 24V
- Rise / Fall Time (Typ): 20ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,264 |
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