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Infineon Technologies Products

Records 16,988
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Part Number
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Description
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hot IRGB4086PBF
Infineon Technologies

IGBT 300V 70A 160W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/112ns
  • Test Condition: 196V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Package: TO-220-3
Stock15,000
IRG4BH20K-STRLP
Infineon Technologies

IGBT 1200V 11A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 450µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 23ns/93ns
  • Test Condition: 960V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock4,208
62-0095PBF
Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 2W
  • Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 8-SOIC
Package: 8-SOIC
Stock3,456
BSS131L6327HTSA1
Infineon Technologies

MOSFET N-CH 240V .11A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 56µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock4,272
IRF5804TR
Infineon Technologies

MOSFET P-CH 40V 2.5A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 198 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Package: SOT-23-6 Thin, TSOT-23-6
Stock2,528
AUIRFS3004TRL
Infineon Technologies

MOSFET N-CH 40V 340A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7,600
hot IRF6645TRPBF
Infineon Technologies

MOSFET N-CH 100V 5.7A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SJ
  • Package / Case: DirectFET? Isometric SJ
Package: DirectFET? Isometric SJ
Stock177,720
hot IRFI530NPBF
Infineon Technologies

MOSFET N-CH 100V 12A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
Package: TO-220-3 Full Pack
Stock36,696
PTRA093302FCV1R2XTMA1
Infineon Technologies

IC RF FET LDMOS 330W H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 768MHz
  • Gain: 17.25dB
  • Voltage - Test: 48V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 79W
  • Voltage - Rated: 105V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
Package: H-37248-4
Stock3,952
hot IRF5850TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 2.2A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 960mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Package: SOT-23-6 Thin, TSOT-23-6
Stock72,756
BCP5216H6327XTSA1
Infineon Technologies

TRANS PNP 60V 1A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
Package: TO-261-4, TO-261AA
Stock7,728
BCR 149T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 70mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
Package: SC-75, SOT-416
Stock7,856
BCR185E6327HTSA1
Infineon Technologies

TRANS PREBIAS PNP 0.2W SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock7,136
hot IRAMX16UP60A
Infineon Technologies

IC PWR HYBRID 600V 16A SIP2

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 16A
  • Voltage: 600V
  • Voltage - Isolation: 2000Vrms
  • Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Package: 23-PowerSIP Module, 19 Leads, Formed Leads
Stock7,168
IDW30G65C5FKSA1
Infineon Technologies

DIODE SCHOTTKY 650V 30A TO247-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.1mA @ 650V
  • Capacitance @ Vr, F: 860pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Operating Temperature - Junction: -55°C ~ 175°C
Package: TO-247-3
Stock6,352
BAS7006WH6327XTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 70V SOT323

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
Package: SC-70, SOT-323
Stock4,336
IR082H4C10U-P2
Infineon Technologies

IC CONTROL 9-SIP

  • Type: -
  • Applications: -
  • Mounting Type: Through Hole
  • Package / Case: 9-SIP, 7 Leads
  • Supplier Device Package: 7-SIP
Package: 9-SIP, 7 Leads
Stock4,032
BTS52422LAUMA1
Infineon Technologies

IC PWR SWITCH HISIDE PG-DSO-12-9

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.5 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 5.5A
  • Rds On (Typ): 19 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
  • Supplier Device Package: PG-DSO-12-9
Package: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Stock6,784
IR1176STR
Infineon Technologies

IC DRIVER RECT SYNC 5V 4A 20SSOP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 5.25 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 20-SSOP
Package: 20-SSOP (0.209", 5.30mm Width)
Stock6,944
hot IR21531
Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 45ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
Package: 8-DIP (0.300", 7.62mm)
Stock71,364
hot IR2133JTRPBF
Infineon Technologies

IC DRIVER BRIDGE 3PHASE 44PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Package: 44-LCC (J-Lead), 32 Leads
Stock366,108
ICE5QSAGXUMA1
Infineon Technologies

IC OFFLN CTRLR QUASI-RESON DSO8

  • Output Isolation: Isolated
  • Internal Switch(s): No
  • Voltage - Breakdown: -
  • Topology: Flyback
  • Voltage - Start Up: 16V
  • Voltage - Supply (Vcc/Vdd): 10 V ~ 27 V
  • Duty Cycle: -
  • Frequency - Switching: -
  • Power (Watts): 109W
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
  • Mounting Type: -
Package: 8-SOIC (0.154", 3.90mm Width)
Stock25,908
PEF 22558 E V1.1-G
Infineon Technologies

IC LIU E1/T1/J1 256LBGA

  • Function: Framer, Line Interface Unit (LIU)
  • Interface: E1, J1, SCI, SPI, T1
  • Number of Circuits: 8
  • Voltage - Supply: 1.8V, 3.3V
  • Current - Supply: -
  • Power (Watts): 150mW
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: PG-LBGA-256
Package: 256-LBGA
Stock5,472
XC8664FRIBEKXUMA1
Infineon Technologies

IC MCU 8BIT 16KB FLASH 38TSSOP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 86MHz
  • Connectivity: SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 19
  • Program Memory Size: 16KB (16K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 768 x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 38-TFSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 38-TSSOP
Package: 38-TFSOP (0.173", 4.40mm Width)
Stock7,056
TLE4983CHTNE6747HAMA1
Infineon Technologies

SPEED SENSORS 3SSO

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Stock6,570
TLV49644TAXBXA1
Infineon Technologies

IC HALL EFFECT SWITCH 3TO92

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Stock3,276
SRF 55V02S Y1/0
Infineon Technologies

IC EEPROM 2KBIT INTELLIG Y1.0-2

  • Type: RFID Transponder
  • Frequency: 13.56MHz
  • Standards: ISO 15693, ISO 18000-3
  • Interface: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 70°C
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Stock4,266
BGS 12AL7-6 E6327
Infineon Technologies

IC SWITCH RF SPDT TSLP7-6

  • Frequency - Lower: 30MHz
  • Frequency - Upper: 3GHz
  • Isolation @ Frequency: 25dB @ 2GHz (typ)
  • Insertion Loss @ Frequency: 0.5dB @ 2GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SPDT
  • P1dB: -
  • Features: DC Blocked, Single Line Control
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: General Purpose
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: TSLP-7-6
Package: 6-XFDFN Exposed Pad
Stock60,534
IR3541MMU01TRP
Infineon Technologies

IC REGULATOR PG-VQFN-40-902

  • Applications: Controller, DDR, Intel VR12, AMD SVI
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
Package: 40-VFQFN Exposed Pad
Stock2,352
PX7299EDQG005XUMA1
Infineon Technologies

IC REGULATOR 16VQFN

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Package: -
Stock7,728