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Microsemi Corporation Products - Transistors - FETs, MOSFETs - Single

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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT39F60J
Microsemi Corporation

MOSFET N-CH 600V 42A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 42A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Package: SOT-227-4, miniBLOC
Stock4,448
MOSFET (Metal Oxide)
600V
42A
10V
5V @ 2.5mA
280nC @ 10V
11300pF @ 25V
±30V
-
480W (Tc)
110 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
hot APT94N60L2C3G
Microsemi Corporation

MOSFET N-CH 600V 94A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 833W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX? [L2]
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock6,240
MOSFET (Metal Oxide)
600V
94A (Tc)
10V
3.9V @ 5.4mA
640nC @ 10V
13600pF @ 25V
±20V
-
833W (Tc)
35 mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Through Hole
264 MAX? [L2]
TO-264-3, TO-264AA
hot APT36N90BC3G
Microsemi Corporation

MOSFET N-CH 900V 36A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7463pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock4,448
MOSFET (Metal Oxide)
900V
36A (Tc)
10V
3.5V @ 2.9mA
252nC @ 10V
7463pF @ 25V
±20V
Super Junction
390W (Tc)
120 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT24M120L
Microsemi Corporation

MOSFET N-CH 1200V 24A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8370pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock5,392
MOSFET (Metal Oxide)
1200V
24A (Tc)
10V
5V @ 2.5mA
260nC @ 10V
8370pF @ 25V
±30V
-
1040W (Tc)
680 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT5010LFLLG
Microsemi Corporation

MOSFET N-CH 500V 46A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock4,896
MOSFET (Metal Oxide)
500V
46A (Tc)
10V
5V @ 2.5mA
95nC @ 10V
4360pF @ 25V
±30V
-
520W (Tc)
100 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT47N60SC3G
Microsemi Corporation

MOSFET N-CH 600V 47A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3 [S]
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock4,368
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
3.9V @ 2.7mA
260nC @ 10V
7015pF @ 25V
±20V
-
417W (Tc)
70 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3 [S]
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT56M50L
Microsemi Corporation

MOSFET N-CH 500V 56A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock7,984
MOSFET (Metal Oxide)
500V
56A (Tc)
10V
5V @ 2.5mA
220nC @ 10V
8800pF @ 25V
±30V
-
780W (Tc)
100 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA
APT42F50B
Microsemi Corporation

MOSFET N-CH 500V 42A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock5,952
MOSFET (Metal Oxide)
500V
42A (Tc)
10V
5V @ 1mA
170nC @ 10V
6810pF @ 25V
±30V
-
625W (Tc)
130 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT1204R7BFLLG
Microsemi Corporation

MOSFET N-CH 1200V 3.5A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock6,912
MOSFET (Metal Oxide)
1200V
3.5A (Tc)
10V
5V @ 1mA
31nC @ 10V
715pF @ 25V
±30V
-
135W (Tc)
4.7 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT38N60BC6
Microsemi Corporation

MOSFET N-CH 600V 38A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock4,208
MOSFET (Metal Oxide)
600V
38A (Tc)
10V
3.5V @ 1.2mA
112nC @ 10V
2826pF @ 25V
±20V
-
278W (Tc)
99 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
hot APT8M100B
Microsemi Corporation

MOSFET N-CH 1000V 8A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock111,336
MOSFET (Metal Oxide)
1000V
8A (Tc)
10V
5V @ 1mA
60nC @ 10V
1885pF @ 25V
±30V
-
290W (Tc)
1.8 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT40SM120B
Microsemi Corporation

MOSFET N-CH 1200V 41A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 273W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Package: TO-247-3
Stock5,216
SiCFET (Silicon Carbide)
1200V
41A (Tc)
20V
3V @ 1mA (Typ)
130nC @ 20V
2560pF @ 1000V
+25V, -10V
-
273W (Tc)
100 mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
APT56M50B2
Microsemi Corporation

MOSFET N-CH 500V 56A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX?
  • Package / Case: TO-247-3 Variant
Package: TO-247-3 Variant
Stock7,712
MOSFET (Metal Oxide)
500V
56A (Tc)
10V
5V @ 2.5mA
220nC @ 10V
8800pF @ 25V
±30V
-
780W (Tc)
100 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX?
TO-247-3 Variant
APT106N60B2C6
Microsemi Corporation

MOSFET N-CH 600V 106A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8390pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 833W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 53A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Package: TO-247-3 Variant
Stock7,920
MOSFET (Metal Oxide)
600V
106A (Tc)
10V
3.5V @ 3.4mA
308nC @ 10V
8390pF @ 25V
±20V
-
833W (Tc)
35 mOhm @ 53A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APT30F50B
Microsemi Corporation

MOSFET N-CH 500V 30A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4525pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 415W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock7,248
MOSFET (Metal Oxide)
500V
30A (Tc)
10V
5V @ 1mA
115nC @ 10V
4525pF @ 25V
±30V
-
415W (Tc)
190 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT94N65B2C6
Microsemi Corporation

MOSFET N-CH 650V 95A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 833W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 35.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Package: TO-247-3 Variant
Stock9,948
MOSFET (Metal Oxide)
650V
95A (Tc)
10V
3.5V @ 3.5mA
320nC @ 10V
8140pF @ 25V
±20V
Super Junction
833W (Tc)
35 mOhm @ 35.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
hot APT60N60BCSG
Microsemi Corporation

MOSFET N-CH 600V 60A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 431W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock4,208
MOSFET (Metal Oxide)
600V
60A (Tc)
10V
3.9V @ 3mA
190nC @ 10V
7200pF @ 25V
±30V
-
431W (Tc)
45 mOhm @ 44A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT48M80L
Microsemi Corporation

MOSFET N-CH 800V 48A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9330pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1135W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock7,044
MOSFET (Metal Oxide)
800V
49A (Tc)
10V
5V @ 2.5mA
305nC @ 10V
9330pF @ 25V
±30V
-
1135W (Tc)
200 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT17F100B
Microsemi Corporation

MOSFET N-CH 1000V 17A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4845pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock7,232
MOSFET (Metal Oxide)
1000V
17A (Tc)
10V
5V @ 1mA
150nC @ 10V
4845pF @ 25V
±30V
-
625W (Tc)
800 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT24F50B
Microsemi Corporation

MOSFET N-CH 500V 24A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 335W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock8,196
MOSFET (Metal Oxide)
500V
24A (Tc)
10V
5V @ 1mA
90nC @ 10V
3630pF @ 25V
±30V
-
335W (Tc)
240 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APTM10UM01FAG
Microsemi Corporation

MOSFET N-CH 100V 860A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 860A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 2100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 60000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2500W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 275A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Package: SP6
Stock5,824
MOSFET (Metal Oxide)
100V
860A
10V
4V @ 12mA
2100nC @ 10V
60000pF @ 25V
±30V
-
2500W (Tc)
1.6 mOhm @ 275A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
hot APL502J
Microsemi Corporation

MOSFET N-CH 500V 52A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 52A
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 26A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Package: SOT-227-4, miniBLOC
Stock6,400
MOSFET (Metal Oxide)
500V
52A
15V
4V @ 2.5mA
-
9000pF @ 25V
±30V
-
568W (Tc)
90 mOhm @ 26A, 12V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT40SM120J
Microsemi Corporation

MOSFET N-CH 1200V 32A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 32A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Package: SOT-227-4, miniBLOC
Stock8,172
MOSFET (Metal Oxide)
1200V
32A
20V
3V @ 1mA (Typ)
130nC @ 20V
2560pF @ 1000V
+25V, -10V
-
165W (Tc)
100 mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
hot APT14M120B
Microsemi Corporation

MOSFET N-CH 1200V 14A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4765pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock4,848
MOSFET (Metal Oxide)
1200V
14A (Tc)
10V
5V @ 1mA
145nC @ 10V
4765pF @ 25V
±30V
-
625W (Tc)
1.2 Ohm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT13F120B
Microsemi Corporation

MOSFET N-CH 1200V 14A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4765pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock10,380
MOSFET (Metal Oxide)
1200V
14A (Tc)
10V
5V @ 1mA
145nC @ 10V
4765pF @ 25V
±30V
-
625W (Tc)
1.4 Ohm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APL502LG
Microsemi Corporation

MOSFET N-CH 500V 58A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock7,560
MOSFET (Metal Oxide)
500V
58A (Tc)
15V
4V @ 2.5mA
-
9000pF @ 25V
±30V
-
730W (Tc)
90 mOhm @ 29A, 12V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT50M65JFLL
Microsemi Corporation

MOSFET N-CH 500V 58A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7010pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Package: SOT-227-4, miniBLOC
Stock6,432
MOSFET (Metal Oxide)
500V
58A
10V
5V @ 2.5mA
141nC @ 10V
7010pF @ 25V
±30V
-
520W (Tc)
65 mOhm @ 29A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT40SM120S
Microsemi Corporation

MOSFET N-CH 1200V 41A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 273W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3Pak
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock18,444
SiCFET (Silicon Carbide)
1200V
41A (Tc)
20V
3V @ 1mA (Typ)
130nC @ 20V
2560pF @ 1000V
+25V, -10V
-
273W (Tc)
100 mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3Pak
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot APT37M100L
Microsemi Corporation

MOSFET N-CH 1000V 37A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1135W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
Package: TO-264-3, TO-264AA
Stock6,288
MOSFET (Metal Oxide)
1000V
37A (Tc)
10V
5V @ 2.5mA
305nC @ 10V
9835pF @ 25V
±30V
-
1135W (Tc)
330 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA
hot APT7M120B
Microsemi Corporation

MOSFET N-CH 1200V 8A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 335W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Package: TO-247-3
Stock104,256
MOSFET (Metal Oxide)
1200V
8A (Tc)
10V
5V @ 1mA
80nC @ 10V
2565pF @ 25V
±30V
-
335W (Tc)
2.5 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3